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    DIODE M160 Search Results

    DIODE M160 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE M160 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 9 Jul, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M1609NC200 to M1609NC260 Old Type No.: SM16-26CXC915 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000-2600


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    M1609NC200 M1609NC260 SM16-26CXC915 M1609NC260 PDF

    M1609NC

    Abstract: M1609NC200
    Text: WESTCODE An Date:- 9 Jul, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M1609NC200 to M1609NC260 Old Type No.: SM16-26CXC915 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000-2600


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    M1609NC200 M1609NC260 SM16-26CXC915 M1609NC260 M1609NC PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage High Temp Diode - Axial Lead 10mA • 100ns ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Vrwm Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time


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    100ns 50VDC M160UFGHT PDF

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    Abstract: No abstract text available
    Text: Spice Model Part Number M160SG Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C M160SG 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms


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    M160SG 50VDC M160SG M25SG M50SG M100SG 00E-07 PDF

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    Abstract: No abstract text available
    Text: Spice Model P a rt Number M160UFG Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io ) (Ir) (V f) 55°C(1) 100°C(2) 25°C 100°C M160UFG 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time


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    M160UFG 50VDC M25UFG M50UFG M100UFG 00E-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spice Model Part Number M160FF3 Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C M160F F3 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms


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    M160FF3 50VDC M160F M25UFG M50UFG M100UFG 00E-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: , L/ nc. . LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwrn Forward Voltage Vrwm (lo) (Ir) (Vf) 55°C(1) 100°C(2) 25°C M160UFG TELEPHONE: (973) 376-2922 (212)227-6005


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    M25UFG M50UFG M100UFG M160UFG 50VDC PDF

    Untitled

    Abstract: No abstract text available
    Text: M160PG THRU M160PM 硅整流器 Silicon Rectifier •特征 Features ● Io ■外形尺寸和印记 15A Outline Dimensions and Mark MP VRRM 400V~1000V ● 玻璃钝化芯片 Glass passivated chip ● .018 0.45 .014(0.35) ● Upper Electrode Chip Bottom Electrode


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    M160PG M160PM 22-Sep-11 21yangjie PDF

    sharp laser diodes

    Abstract: OC100G
    Text: Table of Contents PAGE SURFACE MOUNT MOLDED DIODES 30ns 420mA, 2000V . 08 - 09 70ns 50mA - 250mA, 150mA - 500mA, 2000V - 5000V .


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    420mA, 250mA, 150mA 500mA, 750mA 2000mA, 800mA 1500mA 3500mA, sharp laser diodes OC100G PDF

    diode M160

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2732T1A SWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 +0.1 6 ±0.2 0.10 S 0.27 ±0.05 +0.05 −0 1 μ PA2732T1A-E1-AZ Note μ PA2732T1A-E2-AZ Note 4.1 ±0.2 PART NUMBER 1.0 MAX. 5.4 ±0.2 0.2 ORDERING INFORMATION


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    PA2732T1A PA2732T1A-E1-AZ PA2732T1A-E2-AZ PA2732T1A diode M160 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spice Model P a rt Number M25SG Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io ) (Ir) (V f) 55°C(1) 100°C(2) 25°C 100°C M25SG 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms


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    M25SG 50VDC M25SG M50SG M100SG M160SG 00E-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spice Model M50SG Electrical Characteristics and Maximum Ratings Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C M50SG 1 Cycle Repetitive Reverse Surge


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    M50SG 50VDC PDF

    Untitled

    Abstract: No abstract text available
    Text: Spice Model M100SG Electrical Characteristics and Maximum Ratings Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C M100SG 1 Cycle Repetitive Reverse Surge


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    M100SG 50VDC PDF

    Untitled

    Abstract: No abstract text available
    Text: Spice Model M50FF3 Electrical Characteristics and Maximum Ratings Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C M50FF3 1 Cycle Repetitive Reverse Surge


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    M50FF3 50VDC PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    diode M160

    Abstract: PA2732UT1A
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2732UT1A SWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 +0.1 6 ±0.2 0.10 S 1.0 MAX. PACKAGE μ PA2732UT1A-E1-AZ Note μ PA2732UT1A-E2-AZ Note 4.1 ±0.2 PART NUMBER 1 0.2 0.27 ±0.05 5.4 ±0.2 ORDERING INFORMATION


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    PA2732UT1A PA2732UT1A-E1-AZ PA2732UT1A-E2-AZ PA2732UT1A diode M160 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    rtc ds130

    Abstract: No abstract text available
    Text: Surge Protection AC & DC Power Photovoltaic Telecom Dataline Coaxial SURGE PROTECTORS for AC & DC Power, Photovoltaic, Telecom, Dataline, & Coaxial - 9 t h e d i t i o n , N o r t h A m e r i c a 9 th E d i t i o n North America 1 9 th E d i t i o n North America


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    RU-105082 rtc ds130 PDF

    luminous inverter circuit diagram for repairing

    Abstract: citel 08 90v
    Text: 9 th e d i t i o n Surge Protection Electrical Installations Photovoltaic Telecom Data Radiocommunication General Catalog 9th edition p. 6 DIN RAIL AC POWER SURGE PROTECTORS p. 60 p. 70 AC POWER SURGE PROTECTORS p. 78 p. 94 HIGH FREQUENCY COAXIAL SURGE PROTECTORS


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    RU-105082 FL33025 luminous inverter circuit diagram for repairing citel 08 90v PDF

    X200SG

    Abstract: Z100SG 1N6521U
    Text: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000


    OCR Scan
    M50FF3 M50FF5 1N6533 M50UFG M50FG M50SG X50FF3 X50FF5 1N6525 X50UFG X200SG Z100SG 1N6521U PDF