zener diode zg
Abstract: ZG zener E35A21VBR E35A21VBS
Text: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA
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E35A21VBS,
E35A21VBR
E35A21VBS
100mA,
100mS
zener diode zg
ZG zener
E35A21VBR
E35A21VBS
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HSE11
Abstract: Hitachi DSA002712
Text: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode
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HSE11
ADE-208-162A
HSE11
10sec
16GHz
12GHz
Hitachi DSA002712
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Hitachi DSA00772
Abstract: HSE11
Text: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode
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AED-208-162A
HSE11
10sec
16GHz
12GHz
Hitachi DSA00772
HSE11
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Hitachi DSA00279
Abstract: mark SIN
Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark
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HRF22
ADE-208-163D
HRF22
10msec
Hitachi DSA00279
mark SIN
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Hitachi DSA0077
Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Text: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information
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ADE-208-163C
HRF22
10msec
HRF32
Hitachi DSA0077
Hitachi DSA00770
HRF22
HRF32
mark 32
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Untitled
Abstract: No abstract text available
Text: SURGE SUPPRESSOR DIODE DAM1MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B27 BN Cathode band
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Untitled
Abstract: No abstract text available
Text: SURGE SUPPRESSOR DIODE DAM2MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch 2.0 (0.08) B2 7 BN 3.6 (0.14) Type mark Lot mark Cathode band
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DO-214AA
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HVU362
Abstract: Hitachi DSA00303
Text: ADE-208-348 Z HVU362 Variable Capacitance Diode VCXO Rev. 0 May. 1995 Features Outline • High capacitance ratio.(n=3.0min) • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark Ordering Information
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ADE-208-348
HVU362
100MHz
HVU362
Hitachi DSA00303
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DSM3MA4
Abstract: No abstract text available
Text: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM3MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark DC F F 2 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band
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Zener Diode B1 9
Abstract: hzu2.2btlf HZU22B1 PRI 504 diode
Text: HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer Features Outline • Ultra small Resin package URP is suitable for surface mount design. Cathode mark Mark T r i= • These diodes are delivered taped. itr H 2 Ordering Information Type No. Laser Mark
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Untitled
Abstract: No abstract text available
Text: HVC351-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.35Q max • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark X M -n 1 C; x: * 13 2 Ordering Information Type No. L aser Mark
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HVC351----------Variable
HVC351
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HSE11
Abstract: 27ma
Text: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer HITACHI Features Rev. 1 Sep. 1994 Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark Ordering Information Type No. M ark Package Code HSE11 Cathode mark ERP
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HSE11
AED-208-162A
HSE11
10sec
27ma
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Untitled
Abstract: No abstract text available
Text: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.
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ADE-208-163B
HRF22
10msec
HRF22
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Untitled
Abstract: No abstract text available
Text: HVU351-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.35Q max • Ultra small Resin £ackage (URP) is suitable for surface mount design. Cathode mark Mark ft : Ordering Information 1. Cathode 2. Anode Type No.
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HVU351----------Variable
HVU351
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Untitled
Abstract: No abstract text available
Text: HVU351 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.35i2max • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU351 6 URP Outline Cathode mark
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HVU351
35i2max)
ADE-208-037E
470MHz
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Untitled
Abstract: No abstract text available
Text: HVC351 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.35i2max • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVC351 6 UFP Outline Cathode mark
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HVC351
35i2max)
ADE-208-415A
470MHz
SC-79
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HVU351
Abstract: No abstract text available
Text: ADE-208-037C Z HVU351 Variable Capacitance Diode for VCO Preliminary Rev. 3 May. 1993 HITACHI Features Outline • Low series resistance. (rs=0.35il max) • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark Mark , . . i _
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HVU351
ADE-208-037C
HVU351
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ADE-208-024C
Abstract: Zener Diode B1 9 zener diode 82 b3 HZU22B1 DIODE MARKING CODE B3 zener 3B2 B1 6 zener ZENER DIODE B3 Hitachi Semiconductor zener diodes hzu2.2btlf
Text: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark I-
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ADE-208-024C
Zener Diode B1 9
zener diode 82 b3
HZU22B1
DIODE MARKING CODE B3
zener 3B2
B1 6 zener
ZENER DIODE B3
Hitachi Semiconductor zener diodes
hzu2.2btlf
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Untitled
Abstract: No abstract text available
Text: ! ADE-208-372 Z HVU367 Variable Capacitance Diode for VCO HITACHI Features Rev. 0 Jun. 1995 Outline • Low series resistance. (rs=0.4Q max) • Ultra small Eesin Package (URP) is suitable for surface mount design. Cathode mark Mark 77Î7: Ordering Information
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HVU367
ADE-208-372
HVU367
470MHz
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RA code mark
Abstract: No abstract text available
Text: ADE-208-037D Z HVU351 Variable Capacitance Diode for VCO HITACHI Features Rev. 4 May. 1995 Outline • Low series resistance. (rs=0.35Q max) • Ultra small Resin Backage (URP) is suitable for surface mount design. Cathode mark Mark 1 EE Ordering Information
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ADE-208-037D
HVU351
HVU351
470MHz
RA code mark
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Untitled
Abstract: No abstract text available
Text: ADE-208-036C Z HVU350 Variable Capacitance Diode for VCO Preliminary Rev. 3 May. 1993 HITACHI Features Outline • Low series resistance. (rs=0.50f2 max) • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark t » itr
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ADE-208-036C
HVU350
470MHz
HVU350
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7B1 zener diode
Abstract: Zener Diode B1 9 zener 3B2 HZU3.3 HZU22B1
Text: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Eesin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark Ordering Information
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ADE-208-024C
7B1 zener diode
Zener Diode B1 9
zener 3B2
HZU3.3
HZU22B1
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diode hitachi schottky
Abstract: HSE11 diode hitachi Hitachi Scans-001
Text: H SE ll GaAs Schottky Barrier Diode for SHF Mixer HITACHI ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline C a th o d e m a rk
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ADE-208-162A
HSE11
10sec
HSE11
diode hitachi schottky
diode hitachi
Hitachi Scans-001
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