diode code ae
Abstract: No abstract text available
Text: Central" CLL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type isasilicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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CLL2003
100hA
100mA
200mA
100i2
diode code ae
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Untitled
Abstract: No abstract text available
Text: 1N4448W PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance SOD-123 MARKING: T5 & A3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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1N4448W
OD-123
100mA
150mA
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1N4148WS
Abstract: No abstract text available
Text: 1N4148WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES SOD-323 MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM 100 V 75 V VR RMS 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current
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1N4148WS
OD-323
150mA
1N4148WS
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Untitled
Abstract: No abstract text available
Text: 1N4448WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance SOD-323 MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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1N4448WS
OD-323
100mA
150mA
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diode sod-123 marking code 120
Abstract: diode sod-123 marking code t2 BA 141 diode
Text: BAV19W-BAV21W SOD-123 Plastic-Encapsulate Diodes SOD-123 FAST SWITCHING DIODE FEATURES MARKING: BAV19W: A8 BAV20W: T2 BA 2 W T3 BAV21W: Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
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BAV19W-BAV21W
OD-123
OD-123
BAV19W:
BAV20W:
BAV21W:
diode sod-123 marking code 120
diode sod-123 marking code t2
BA 141 diode
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED diode k77 K77 diode
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750
BAT750-GS18
BAT750-GS08
08-Apr-05
VISHAY diode MARKING ED
VISHAY MARKING ED
diode k77
K77 diode
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VISHAY diode MARKING ED
Abstract: K77 diode Vishay DaTE CODE BAT750 BAT750-GS08 BAT750-GS18 vishay ED
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750-GS18
BAT750-GS08
18-Jul-08
VISHAY diode MARKING ED
K77 diode
Vishay DaTE CODE
BAT750
vishay ED
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750-GS18
BAT750-GS08
D-74025
24-May-04
VISHAY diode MARKING ED
VISHAY MARKING ED
ED MARKING Vishay
K77 diode
VISHAY MARKING EA
BAT750
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"Diode low voltage"
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • RB551V-30 500 mA Schottky Barrier Diode 30 Volts Marking: D High Current Rectifier Schottky Diode
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RB551V-30
OD-323
"Diode low voltage"
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • RB551V-30 500 mA Schottky Barrier Diode 30 Volts Marking: D High Current Rectifier Schottky Diode
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RB551V-30
OD-323
125ns,
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KA2 DIODE
Abstract: DIODE marking A2 KA2 TO Ka2 transistor MMBD4148WT
Text: MCC BAS16WT MMBD4148WT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode Marking: A2, KA2, KT1
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BAS16WT
MMBD4148WT
200mW
150mA
200mW
OT-323
150mA;
75Volts
KA2 DIODE
DIODE marking A2
KA2 TO
Ka2 transistor
MMBD4148WT
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75V 150mA Diode
Abstract: diodes ir K 250 diode transistor sot datasheet
Text: MCC BAW56WT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode Marking: KJC SOT-323 A D Maximum Ratings
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BAW56WT
200mW
150mA
200mW
OT-323
150mA;
75Volts
75V 150mA Diode
diodes ir
K 250 diode
transistor sot datasheet
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diodes ir
Abstract: 75V 150mA Diode IR 50RIA120 K 250 diode
Text: MCC BAV70WT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode Marking KJA SOT-323 A D Maximum Ratings
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BAV70WT
200mW
150mA
200mW
OT-323
150mA;
75Volts
diodes ir
75V 150mA Diode
IR 50RIA120
K 250 diode
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marking k43 diode
Abstract: Diode Marking .004
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAS40TW Features • • 200mW 40Volt Schottky Barrier Diode Pow Dissipation PD=200mW Tamb=25℃ IF=200mA Marking: K43 Maximum Ratings •
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BAS40TW
200mW
200mA
40Volt
OT-363
380mV
1000mV
200nA
30Volts
marking k43 diode
Diode Marking .004
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components BAT60B Features • • • • • • • • • Small Signal Schottky Diode Marking: W5 Lead Free Finish/RoHS Compliant "P" Suffix
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BAT60B
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JXs sot
Abstract: No abstract text available
Text: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) ♦ Top View .016 (0.4) These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS40
BAS40-06
OT-23
OT-23
BAS40-04
BAS40
BAS40-05
JXs sot
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
Text: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS40
BAS40-06
OT-23
OT-23
BAS40-04
BAS40
BAS40-05
BAS40-04
BAS40-05
BAS40-06
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Diode SOT-23 marking JE
Abstract: BAL99 BAV70 BAV99 BAW56 bav99 marking
Text: BAL99, BAV99 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diode .122 3.1 .118 (3.0) .016 (0.4) Top View for automatic insertion. ♦ This diode is also available in other configurations including a dual common cathode with type designation BAV70 and a dual common anode with
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BAL99,
BAV99
OT-23
BAV70
BAW56.
OT-23
Diode SOT-23 marking JE
BAL99
BAV99
BAW56
bav99 marking
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DIODE marking 33
Abstract: diode marking 74 BAS70 BAS70-04 BAS70-05 BAS70-06
Text: BAS70 THRU BAS70-06 Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) voltage and fast switching. Top View ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 .016 (0.4) .045 (1.15) .037 (0.95)
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BAS70
BAS70-06
OT-23
OT-23
BAS70-04
BAS70
BAS70-05
DIODE marking 33
diode marking 74
BAS70-04
BAS70-05
BAS70-06
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Untitled
Abstract: No abstract text available
Text: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) .016 (0.4) These diodes feature very low turn-on voltage and fast switching. Top View These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis
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BAT54
BAT54S
OT-23
BAT54
BAT54A
OT-23
BAT54C
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marking L42
Abstract: BAT54 BAT54A BAT54C BAT54S
Text: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT54
BAT54S
OT-23
OT-23
BAT54
BAT54A
BAT54C
marking L42
BAT54A
BAT54C
BAT54S
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MIL-STD-750 METHOD 2036
Abstract: 5082-2817 HSMS-28XX diode hp 5082-2817 hp2817
Text: Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2817/18 Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity Outline 15 0.41 .016 0.36 (.014) 25.4 (1.00) MIN. tension for 30 minutes). The
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HSMS-28XX
5965-8845E
MIL-STD-750 METHOD 2036
5082-2817
diode hp 5082-2817
hp2817
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a7 surface mount diode
Abstract: AP-202 diode a7 surface mount device PAN202U ANP202U Diode Marking .004 marking A85 MARKING MO MU SOT-323 PAN217
Text: PAN202U / PANP202U / PAN217U SURFACE MOUNT SWITCHING DIODES SWITCHING DIODE 100m AMPERRES 80 VOLTS SOT-323 SC-70 .012(0.30) .016(0.40) .079(2.00) .094(2.40) .045(1.15) TOP VIEW .053(1.35) _ .012(0.30) .012(0.40) .004(0.10) .0098(0.25) .026(0.65) .071(1.80)
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PAN202U
PANP202U
PAN217U
OT-323
SC-70)
MIL-STD-202
Method208
006grams
100ns
a7 surface mount diode
AP-202
diode a7 surface mount device
ANP202U
Diode Marking .004
marking A85
MARKING MO MU SOT-323
PAN217
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Untitled
Abstract: No abstract text available
Text: Thn% H EW LETT» mL'EM PA CKARD Schottky Barrier D iodes for M ixers and D etectors Technical Data 5082 2817/18 - Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity O utline 15 0.41 .016
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5082-28XX
44475A4
QQ17S73
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