siemens siferrit N27
Abstract: Siferrit N67 UU CORE 100-turn u cores UI N27
Text: U, UI and UR Cores General Information 1 Core shapes and materials U and I cores are made of SIFERRIT materials N27, N53, N62, N67 and now new, of N82. Owing to their high saturation flux density, high Curie temperature and low dissipation losses, they are suitable for power, pulse and high-voltage transformers in particular line deflection transformers and
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100-turn
mT/100
Hz/100
siemens siferrit N27
Siferrit N67
UU CORE
u cores
UI N27
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed 0.4 +0.1 –0.05 0.16 +0.1 –0.06 +0.1 0.65 –0.15 for DC-DC converter and 2.5 V drive switching applications.
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N2500N
N2500N
SC-96)
N2500N-T1B-AT
N2500N-T2B-AT
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marking ya
Abstract: N2500N-T1B-AT
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. 0.16 +0.1 –0.06 +0.1
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N2500N
N2500N
SC-96)
M8E0909E)
marking ya
N2500N-T1B-AT
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SOT1118
Abstract: PMCPB5530X NXP SMD TRANSISTOR MARKING CODE s1
Text: 020 -6 PMCPB5530X DF N2 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMCPB5530X
DFN2020-6
OT1118)
SOT1118
PMCPB5530X
NXP SMD TRANSISTOR MARKING CODE s1
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9930gm
Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Text: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter
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AP9930GM
9930GM
9930gm
AP9930GM
DEVICE MARKING p1g
marking code P1D
9930G
P2d MARKING CODE
n-channel so8 60v
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930GM-HF-3
AP9930GM-HF-3
AP9930
9930GM
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJPZ-N27 1. Scope The present specifications shall apply to an SJPZ-N27. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 090615 1／4 SANKEN ELECTRIC CO., LTD.
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SJPZ-N27.
SJPZ-N27
UL94V-0
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Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930AGM-HF-3
AP9930AGM-HF-3
AP9930A
9930AGM
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
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PMPB11EN
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
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PMPB20EN
DFN2020MD-6
OT1220)
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BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
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Untitled
Abstract: No abstract text available
Text: 020 -6 PMDPB70XPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB70XPE
DFN2020-6
OT1118)
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TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB56XN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB85UPE
DFN2020-6
OT1118)
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DFN2020-6
Abstract: No abstract text available
Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
DFN2020-6
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB58UPE
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: P-CHANNEL MOSFET
Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD MARKING CODE 11
P-CHANNEL MOSFET
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N6 marking diode
Abstract: zener diode n8 n2 Diode Zener diode marking N9 M7 zener diode MARKING CODE N0 Marking N8 ZENER DIODE n2 sod marking m7 cmoz8l2
Text: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ43L
250mW,
OD-523
CMOZ16L
CMOZ18L
CMOZ20L
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
N6 marking diode
zener diode n8
n2 Diode Zener
diode marking N9
M7 zener diode
MARKING CODE N0
Marking N8
ZENER DIODE n2
sod marking m7
cmoz8l2
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N6 marking diode
Abstract: SOD marking N1 diode marking N9 MARKING CODE N0 zener diode n8
Text: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ43L
350mW,
OD-523
CMOZ16L
CMOZ18L
CMOZ20L
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
N6 marking diode
SOD marking N1
diode marking N9
MARKING CODE N0
zener diode n8
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smd diode ZENER marking code J3
Abstract: smd zener diode code J1 smd zener diode code D5 Zener diode smd marking code w1 Zener diode smd marking h5 Zener diode smd marking e2 smd code C2 zener diode SMD ZENER DIODE E1 Diode smd code f4 smd zener diode code k2
Text: SMD Zener Diode SMD Diodes Specialist CZRW5221B-G Thru CZRW5267B-G Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features SOD-123 For surface mounted applications. 0.152 3.85 0.140(3.55) 500mW Power Dissipation. Ideally suited for automated assembly
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CZRW5221B-G
CZRW5267B-G
OD-123
500mW
OD-123,
MIL-STD-750
QW-BZ018
CZRW5221B
smd diode ZENER marking code J3
smd zener diode code J1
smd zener diode code D5
Zener diode smd marking code w1
Zener diode smd marking h5
Zener diode smd marking e2
smd code C2 zener diode
SMD ZENER DIODE E1
Diode smd code f4
smd zener diode code k2
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smd zener diode code J1
Abstract: Zener diode smd marking h5 Zener diode smd marking code w1 smd diode ZENER marking code J3 Zener diode smd marking e2 SMD ZENER DIODE E1 smd zener diode code h2 Zener diode smd marking J5 smd zener diode code D5 smd zener diode code k2
Text: SMD Zener Diode SMD Diodes Specialist CZRW5221B-HF Thru CZRW5267B-HF Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features Halogen free. SOD-123 For surface mounted applications. 0.152 3.85 0.140(3.55) 500mW Power Dissipation. Ideally suited for automated assembly
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CZRW5221B-HF
CZRW5267B-HF
OD-123
500mW
OD-123,
MIL-STD-750
QW-HZ001
CZRW5221B
smd zener diode code J1
Zener diode smd marking h5
Zener diode smd marking code w1
smd diode ZENER marking code J3
Zener diode smd marking e2
SMD ZENER DIODE E1
smd zener diode code h2
Zener diode smd marking J5
smd zener diode code D5
smd zener diode code k2
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Untitled
Abstract: No abstract text available
Text: ESAlpha Low Resistance Plastic Packaged PIN Diodes SMP1322 Series Features • Designed for High Performance Wireless Switch Applications ■ Specified 1.5 0, @ 1 mA ■ Multiple Package Configurations Description The SMP1322 series of plastic packaged, surface
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SMP1322
OT-143
SMP1322-017)
6/99A
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