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    DIODE MARKING 33A Search Results

    DIODE MARKING 33A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING 33A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    code marking AFAA

    Abstract: AFAA
    Text: PD - 94625A IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF 4625A IRGP50B60PD1 O-247AC IRFPE30 IRFPE30 O-247AC code marking AFAA AFAA

    IRFP250 equivalent

    Abstract: 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 irgp50B60
    Text: PD - 94625 IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF IRGP50B60PD1 IRFPE30 O-247AC IRFP250 equivalent 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 irgp50B60

    FDPF 33N25T

    Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25 FDPF33N25 FDPF33N25T FDPF 33N25T 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: PD- 93893 PROVISIONAL IRFB33N15D IRFS33N15D IRFSL33N15D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 150V 0.056Ω 33A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		PDF IRFB33N15D IRFS33N15D IRFSL33N15D AN1001) O-220AB IRFS33N15D O-262

    diode marking 33a on semiconductor

    Abstract: marking 33a on semiconductor n-channel 250V power mosfet FDB33N25 FDB33N25TM
    Text: UniFET TM FDB33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)


    Original     		PDF FDB33N25 diode marking 33a on semiconductor marking 33a on semiconductor n-channel 250V power mosfet FDB33N25 FDB33N25TM

    irf 940

    Abstract: No abstract text available
    Text: PD - 95070 IRFR/U3303PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S


    Original     		PDF IRFR/U3303PbF IRFR3303) IRFU3033) O-252AA) EIA-481 EIA-541. EIA-481. irf 940

    IRF540N

    Abstract: IRFP140N
    Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91343B IRFP140N O-247 IRF540N IRFP140N

    FDP33N25

    Abstract: No abstract text available
    Text: UniFET FDP33N25 TM 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)


    Original     		PDF FDP33N25 O-220 FDP33N25

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U3303 D l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) O-252AA

    diode marking 33a on semiconductor

    Abstract: marking 33a on semiconductor FDA33N25
    Text: UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS on = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDA33N25 FDA33N25 diode marking 33a on semiconductor marking 33a on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) phas245,

    U3303

    Abstract: AN-994 IRFR3303 *fr3303
    Text: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) U3303 AN-994 IRFR3303 *fr3303

    U3303

    Abstract: AN-994 IRFR3303 9164 fu120
    Text: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) U3303 AN-994 IRFR3303 9164 fu120

    IRF540N

    Abstract: mosfet irf540n
    Text: PD - 91341A IRF540N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1341A IRF540N O-220 IRF1010 IRF540N mosfet irf540n

    diode marking 33a on semiconductor

    Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
    Text: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDB33N25 FDI33N25 FDI33N25 diode marking 33a on semiconductor FDB33N25TM FDI33N25TU

    diode marking 33a on semiconductor

    Abstract: FDI33N25TU marking 33a on semiconductor FDB33N25 FDB33N25TM FDI33N25
    Text: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDB33N25 FDI33N25 FDI33N25 diode marking 33a on semiconductor FDI33N25TU marking 33a on semiconductor FDB33N25TM

    FDPF33N25

    Abstract: marking 33a on semiconductor FDP33N25
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25 O-220 FDPF33N25 marking 33a on semiconductor

    200V 200A mosfet

    Abstract: IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking
    Text: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


    Original     		PDF 5330A IRGP50B60PD1PbF O-247AC 200V 200A mosfet IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking

    fdpf33n25t

    Abstract: diode marking 33a on semiconductor marking 33a on semiconductor
    Text: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25T FDPF33N25T diode marking 33a on semiconductor marking 33a on semiconductor

    FDPF33N25T

    Abstract: No abstract text available
    Text: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • Improved dv/dt capability These N-Channel enhancement mode power field effect


    Original     		PDF FDP33N25 FDPF33N25T O-220 FDPF33N25T

    FDPF33N25T

    Abstract: diode marking 33a on semiconductor marking 33a on semiconductor FDP33N25
    Text: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25T O-220 FDPF33N25T diode marking 33a on semiconductor marking 33a on semiconductor

    50b60pd

    Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


    Original     		PDF 6306A AUIRGP50B60PD1 AUIRGP50B60PD1E 50b60pd 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER

    50B60PD1

    Abstract: P50B60 p50b60pd1
    Text: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters


    Original     		PDF AUIRGP50B60PD1 AUIRGP50B60PD1-E 50B60PD1 P50B60 p50b60pd1

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


    Original     		PDF 6306A AUIRGP50B60PD1 AUIRGP50B60PD1E