Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE MARKING 33A ON SEMICONDUCTOR Search Results

    DIODE MARKING 33A ON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING 33A ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode marking 33a on semiconductor

    Abstract: marking 33a on semiconductor
    Text: FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 940 m Features Description • RDS on = 880 m (Typ.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		FDA33N25 FDA33N25 diode marking 33a on semiconductor marking 33a on semiconductor PDF

    FDPF33N25T

    Abstract: diode marking 33a on semiconductor marking 33a on semiconductor tm 1640
    Text: FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description • RDS on = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDPF33N25T FDPF33N25T diode marking 33a on semiconductor marking 33a on semiconductor tm 1640 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description • RDS on = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDP33N25 PDF

    diode marking 33a on semiconductor

    Abstract: marking 33a on semiconductor
    Text: FDB33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description • RDS on = 94 m (Max.) @ VGS = 10 V, ID 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDB33N25 FDB33N25 diode marking 33a on semiconductor marking 33a on semiconductor PDF

    zp 33a

    Abstract: diode marking 33a on semiconductor 2SJ683 marking 33a on semiconductor A1057
    Text: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		2SJ683 ENA1057 PW10s, A1057-4/4 zp 33a diode marking 33a on semiconductor 2SJ683 marking 33a on semiconductor A1057 PDF

    Untitled

    Abstract: No abstract text available
    Text: ATP207 Ordering number : ENA1319A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP207 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in


    Original     		ATP207 ENA1319A A1319-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		2SJ683 ENA1057 A1057-4/4 PDF

    A1319

    Abstract: ATP207 diode marking 33a on semiconductor marking 33a on semiconductor MJ-33
    Text: ATP207 Ordering number : ENA1319 SANYO Semiconductors DATA SHEET ATP207 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.


    Original     		ATP207 ENA1319 PW10s) PW10s, A1319-4/4 A1319 ATP207 diode marking 33a on semiconductor marking 33a on semiconductor MJ-33 PDF

    Untitled

    Abstract: No abstract text available
    Text: ATP207 Ordering number : ENA1319 SANYO Semiconductors DATA SHEET ATP207 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.


    Original     		ATP207 ENA1319 A1319-4/4 PDF

    FDPF 33N25T

    Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		FDP33N25 FDPF33N25 FDPF33N25 FDPF33N25T FDPF 33N25T 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor PDF

    FDP33N25

    Abstract: No abstract text available
    Text: UniFET FDP33N25 TM 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)


    Original     		FDP33N25 O-220 FDP33N25 PDF

    diode marking 33a on semiconductor

    Abstract: marking 33a on semiconductor n-channel 250V power mosfet FDB33N25 FDB33N25TM
    Text: UniFET TM FDB33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)


    Original     		FDB33N25 diode marking 33a on semiconductor marking 33a on semiconductor n-channel 250V power mosfet FDB33N25 FDB33N25TM PDF

    diode marking 33a on semiconductor

    Abstract: marking 33a on semiconductor FDA33N25
    Text: UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS on = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDA33N25 FDA33N25 diode marking 33a on semiconductor marking 33a on semiconductor PDF

    diode marking 33a on semiconductor

    Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
    Text: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDB33N25 FDI33N25 FDI33N25 diode marking 33a on semiconductor FDB33N25TM FDI33N25TU PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		FQB33N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10L N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		FQB33N10L PDF

    FDPF33N25

    Abstract: marking 33a on semiconductor FDP33N25
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		FDP33N25 FDPF33N25 O-220 FDPF33N25 marking 33a on semiconductor PDF

    FDPF33N25T

    Abstract: No abstract text available
    Text: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • Improved dv/dt capability These N-Channel enhancement mode power field effect


    Original     		FDP33N25 FDPF33N25T O-220 FDPF33N25T PDF

    fdpf33n25t

    Abstract: diode marking 33a on semiconductor marking 33a on semiconductor
    Text: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		FDP33N25 FDPF33N25T FDPF33N25T diode marking 33a on semiconductor marking 33a on semiconductor PDF

    FDPF33N25T

    Abstract: diode marking 33a on semiconductor marking 33a on semiconductor FDP33N25
    Text: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		FDP33N25 FDPF33N25T O-220 FDPF33N25T diode marking 33a on semiconductor marking 33a on semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10L / FQI33N10L N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQB33N10L FQI33N10L FQI33N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10 / FQI33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQB33N10 FQI33N10 FQI33N10 PDF

    fqp33n10

    Abstract: No abstract text available
    Text: FQP33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially


    Original     		FQP33N10 FQP33N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1319A ATP207 N-Channel Power MOSFET http://onsemi.com 40V, 65A, 9.1mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		ENA1319A ATP207 PW10s) PW10s, A1319-7/7 PDF