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    DIODE MARKING 351 Search Results

    DIODE MARKING 351 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING 351 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


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    PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    zener zp 278

    Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
    Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20


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    PDF 500mW DODO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B zener zp 278 Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b

    Untitled

    Abstract: No abstract text available
    Text: SiC SCHOTTKY DIODE SML01SC06D2A/SML01SC06D2B • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


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    PDF SML01SC06D2A/SML01SC06D2B SML01SC06D2A-JQRS

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    351S8E

    Abstract: HMC351S8
    Text: HMC351S8 / 351S8E v03.0705 7 GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz Typical Applications Features The HMC351S8 / HMC351S8E is ideal for: Conversion Loss: 9.0 dB • Cellular Basestations LO/IF Isolation: 35 dB • Cable Modems LO/RF Isolation: 42 dB


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    PDF HMC351S8 351S8E HMC351S8E HMC351S8 351S8E

    HMC351

    Abstract: No abstract text available
    Text: HMC351S8 / 351S8E v03.0705 GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz Typical Applications Features The HMC351S8 / HMC351S8E is ideal for: Conversion Loss: 9.0 dB • Cellular Basestations LO/IF Isolation: 35 dB • Cable Modems LO/RF Isolation: 42 dB


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    PDF HMC351S8 351S8E HMC351S8E HMC351S8 HMC351

    ph 4148 zener diode

    Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vHN-db1102-0407 ph 4148 zener diode ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352

    DSA300I200NA

    Abstract: SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934
    Text: DSA 300 I 100 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 300 A 0.79 V Part number DSA 300 I 100 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:


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    PDF OT-227B 60747and 20091002a DSA300I200NA SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934

    E72873

    Abstract: MWI45-12T6K 45-12T6K 4512T
    Text: MWI 45-12T6K IGBT Module Sixpack IC25 = 43 A VCES = 1200 V VCE sat typ. = 1.9 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 45-12T6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.


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    PDF 45-12T6K E72873 20071113a MWI45-12T6K E72873 MWI45-12T6K 45-12T6K 4512T

    DHG100X1200NA

    Abstract: sot 227b diode fast din 7985 DHG10
    Text: DHG 100 X 1200 NA tentative V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:


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    PDF 60747and DHG100X1200NA sot 227b diode fast din 7985 DHG10

    DHG100X1200NA

    Abstract: SCREW din 7985
    Text: DHG 100 X 1200 NA advanced V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:


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    PDF 60747and DHG100X1200NA SCREW din 7985

    DH2x60-18A

    Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
    Text: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:


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    PDF DH2x60-18A 60747and DH2x60-18A DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6

    MUBW30-12A6K

    Abstract: 30-12A6 E72873 MUBW30-12A6
    Text: MUBW30-12A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 30 A = 320 A VCE(sat) = 2.9 V VCE(sat) = 3V Preliminary data


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    PDF MUBW30-12A6K IDAVM25= E72873 20071113a 30-12A6K MUBW30-12A6K 30-12A6 E72873 MUBW30-12A6

    E72873

    Abstract: MUBW25-06A6K
    Text: MUBW25-06A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = 95 A IC25 IFSM = 12 A IC25 = 31 A = 250 A VCE(sat) = 2.0 V VCE(sat) = 2.1 V Preliminary data


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    PDF MUBW25-06A6K IDAVM25= E72873 20071113a 25-06A6K E72873 MUBW25-06A6K

    Untitled

    Abstract: No abstract text available
    Text: MUBW10-06A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = = 52 A IFSM 90 A IC25 = 12 A IC25 = 300 A VCE(sat) = 2.5 V VCE(sat) = 2.5 V Preliminary data


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    PDF MUBW10-06A6K IDAVM25 E72873 20090929b 10-06A6K

    MUBW15-06A6k

    Abstract: E72873
    Text: MUBW15-06A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = 96 A IC25 IFSM = 12 A IC25 = 19 A = 250 A VCE(sat) = 2.25 V VCE(sat) = 2.4 V Preliminary data


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    PDF MUBW15-06A6K IDAVM25= E72873 20090929b 15-06A6K MUBW15-06A6k E72873

    MUBW10-06A6K

    Abstract: E72873 10-06A6K diode bridge 3510
    Text: MUBW10-06A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = 90 A IC25 IFSM = 12 A IC25 = 52 A = 300 A VCE(sat) = 2.5 V VCE(sat) = 2.5 V Preliminary data


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    PDF MUBW10-06A6K IDAVM25= E72873 20071113a 10-06A6K MUBW10-06A6K E72873 10-06A6K diode bridge 3510

    Untitled

    Abstract: No abstract text available
    Text: MUBW15-06A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = = 19 A IFSM 96 A IC25 = 12 A IC25 = 250 A VCE(sat) = 2.25 V VCE(sat) = 2.4 V Preliminary data


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    PDF MUBW15-06A6K IDAVM25 E72873 20090929b 15-06A6K

    E72873

    Abstract: MUBW20-06A6K
    Text: MUBW20-06A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = 95 A IC25 IFSM = 12 A IC25 = 25 A = 250 A VCE(sat) = 2.25 V VCE(sat) = 2.0 V Preliminary data


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    PDF MUBW20-06A6K IDAVM25= E72873 20090929b 20-06A6K E72873 MUBW20-06A6K

    MUBW15-06A6k

    Abstract: E72873 MUBW15-06A6
    Text: MUBW15-06A6K Converter - Brake - Inverter Module CBI 1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = 96 A IC25 IFSM = 12 A IC25 = 19 A = 250 A VCE(sat) = 2.25 V VCE(sat) = 2.4 V Preliminary data


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    PDF MUBW15-06A6K IDAVM25= E72873 20071113a 15-06A6K MUBW15-06A6k E72873 MUBW15-06A6

    marking A7s

    Abstract: siemens em 350 99 DIODE marking 351
    Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode


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    PDF Q68000-A549 OT-23 BAV99 M0076 marking A7s siemens em 350 99 DIODE marking 351

    diode a57 schottky

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAT 17-07 • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT 17-07 Pin Configuration Ordering Code tape and reel 1 Q62702-A918 C1 2 C2 3 4 A2 A1 Marking Package 57 SOT-143 Maximum Ratings


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    PDF Q62702-A918 OT-143 235b05 fl23SbOS ae3Sb05 diode a57 schottky

    Untitled

    Abstract: No abstract text available
    Text: r Z 7 SGS-THOMSON ^[] æ[l[L[iCT^©[lïl[]©i STPS60xxCP/CPI STPS6045CW POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE


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    PDF STPS60xxCP/CPI STPS6045CW 2500Vrms STPS6035CPI STPS6045CPI T0247 STPS6035CP

    mc 4011

    Abstract: working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic
    Text: NIL SPECS IC|0DDD125 0002204 T | MIL-S-19500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE JAN-1N251 This amendment forms a part o f M ilita r y S p e c ific a tio n MIL-S-19500/188A, dated 9 October 1963, and i s approved fo r use by a ll Departments and


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    PDF MIL-S-19500/188A JAN-1N251 MIL-S-19500/188A, 000250e! MIL-S-19500/188A JAN-1N251. mc 4011 working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic