Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMEN-430A 1. Scope The present specifications shall apply to an FMEN-430A. 2. Outline 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability UL94V-0 Equivalent 050510
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FMEN-430A
FMEN-430A.
UL94V-0
EN430A
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IRFP23N50L
Abstract: 94230B 035H IRFPE30
Text: PD - 94230B IRFP23N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.190Ω 500V 170ns
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94230B
IRFP23N50L
170ns
O-247AC
IRFPE30
O-247AC
IRFP23N50L
94230B
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD -97358 IRLS3036PbF IRLSL3036PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.
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IRLS3036PbF
IRLSL3036PbF
O-262
EIA-418.
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IRLS3036
Abstract: IRLS3036PBF AN-994 IRLSL3036PBF IRLSL3036
Text: PD -97358 IRLS3036PbF IRLSL3036PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.
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IRLS3036PbF
IRLSL3036PbF
O-262
Ga330
EIA-418.
IRLS3036
IRLS3036PBF
AN-994
IRLSL3036PBF
IRLSL3036
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NTE6128
Abstract: 4500a diode marking 430a 106A2S
Text: NTE6128 Silicon Power Rectifier Diode 430 Amp, DO200AA Features: D Fast Recovery Time D Soft Recovery Characteristics D High Surge Current Rating D High Rated Blocking Voltages Applications: D Inverter D Chopper D Transmitter D Free−Wheeling Diode Absolute Maximum Ratings:
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NTE6128
DO200AA
NTE6128
4500a
diode marking 430a
106A2S
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NTE6128
Abstract: 4500a maximum current rating of diodes Vrsm 106A2
Text: NTE6128 Silicon Power Rectifier Diode, 430 Amp Features: D Fast Recovery Time D Soft Recovery Characteristics D High Surge Current Rating D High Rated Blocking Voltages Applications: D Inverter D Chopper D Transmitter D Free–Wheeling Diode Absolute Maximum Ratings:
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NTE6128
NTE6128
4500a
maximum current rating of diodes
Vrsm
106A2
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EIA-541
Abstract: No abstract text available
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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7275A
IRF7862PbF
EIA-481
EIA-541.
EIA-541
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irfp23n50
Abstract: No abstract text available
Text: PD - 94230A SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS on typ. l Switch Mode Power Supply (SMPS) 500V 0.190Ω l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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4230A
IRFP23N50L
irfp23n50
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035H
Abstract: IRFPE30 IRFP23N50LPBF
Text: PD - 94999 IRFP23N50LPbF SMPS MOSFET Applications HEXFET Power MOSFET • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.190Ω 500V 170ns 23A • Motor Control applications
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IRFP23N50LPbF
170ns
O-247AC
IRFPE30
O-247AC
035H
IRFPE30
IRFP23N50LPBF
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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IRF7862
Abstract: IRF7862PBF EIA-541
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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7275A
IRF7862PbF
IRF7862
IRF7862PBF
EIA-541
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IRF 810
Abstract: EIA-541
Text: PD - 97275 IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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IRF7862PbF
EIA-481
EIA-541.
IRF 810
EIA-541
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035H
Abstract: IRFP23N50L IRFPE30
Text: PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS on typ. l Switch Mode Power Supply (SMPS) 500V 0.190Ω l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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IRFP23N50L
170ns
O-247AC
O-247AC
IRFPE30
035H
IRFP23N50L
IRFPE30
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IRF 810
Abstract: IRF7862
Text: PD - 97275B IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS RDS on max 3.3m:@VGS = 10V 30V Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance
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97275B
IRF7862PbF
IRF 810
IRF7862
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Untitled
Abstract: No abstract text available
Text: PD - 97275B IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS RDS on max 3.3m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 4.5V VGS
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97275B
IRF7862PbF
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91209
Abstract: IRFP23N50L 035H IRFPE30
Text: PD - 94999 IRFP23N50LPbF SMPS MOSFET Applications HEXFET Power MOSFET • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.190Ω 500V 170ns 23A • Motor Control applications
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IRFP23N50LPbF
170ns
O-247AC
12-Mar-07
91209
IRFP23N50L
035H
IRFPE30
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IRLB3036GP
Abstract: IRLB3036GPBF
Text: PD - 96275 IRLB3036GPbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ. max. ID (Silicon Limited)
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IRLB3036GPbF
O-220AB
Y2A68UPS`
O-220AB
IRLB3036GP
IRLB3036GPBF
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IRLB3036
Abstract: IRLB3036PBF AN-994
Text: PD - 97357 IRLB3036PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ. max. ID (Silicon Limited)
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IRLB3036PbF
O-220AB
O-220AB
IRLB3036
IRLB3036PBF
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 97357 IRLB3036PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ. max. ID (Silicon Limited)
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IRLB3036PbF
O-220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 96275 IRLB3036GPbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ. max. ID (Silicon Limited)
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IRLB3036GPbF
O-220AB
Y2A68UPS`
O-220AB
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Untitled
Abstract: No abstract text available
Text: AUIRLB3036 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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AUIRLB3036
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD - 97718A AUIRLS3036 HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature
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7718A
AUIRLS3036
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AULS3036
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD - 97718A AUIRLS3036 HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature
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7718A
AUIRLS3036
AULS3036
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Untitled
Abstract: No abstract text available
Text: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and
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SM5819
40Vtms
BT2222A
BT2907A
BT3904
BT3906
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