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    DIODE MARKING 47N Search Results

    DIODE MARKING 47N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING 47N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 17N40K-MT Power MOSFET 17A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


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    17N40K-MT 17N40K-MT O-220F2 QW-R502-B15 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 17N40K-MT Power MOSFET 17A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


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    17N40K-MT 17N40K-MT QW-R502-B15 PDF

    Lovoltech

    Abstract: POWERJFET LS1105 jfet transistor LVT103 lovoltech no diode jfet application LVT101 LVTS101 LVTS101N
    Text: PWRLITE-LS1105N Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “High Side” Buck and DC-DC Converters Low Rg and low Cds for high speed switching


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    PWRLITE-LS1105N LS1105N Lovoltech POWERJFET LS1105 jfet transistor LVT103 lovoltech no diode jfet application LVT101 LVTS101 LVTS101N PDF

    TLI4961-1L

    Abstract: smd hall effect sensor TLI4961-1 PG-SSO-3-2
    Text: TLI4961-1L TLI4961-1M Hall Effect Latch for Industrial Applications Data Sheet Revision 1.1, 2012-10-15 Sense & Control Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    TLI4961-1L TLI4961-1M TLI4961-1L smd hall effect sensor TLI4961-1 PG-SSO-3-2 PDF

    47N60S1

    Abstract: 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code
    Text: / FMH47N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6


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    FMH47N60S1 47N60S1 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code PDF

    LTC4359CMS8

    Abstract: No abstract text available
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current


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    LTC4359 LT4256-1/LT4256-2 LTC4260 LTC4364 4359fb com/LTC4359 LTC4359CMS8 PDF

    IN751a

    Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current


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    LTC4359 4359f IN751a 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller PDF

    47N60S1

    Abstract: FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4
    Text: / FMW47N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg


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    FMW47N60S1HF O-247-P2 47N60S1 FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4 PDF

    FDS3732

    Abstract: 3b transistor
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current


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    LTC4359 4359fa com/LTC4359 FDS3732 3b transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current


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    LTC4359 LT4256 LTC4260 LTC4223-1/LTC4223-2 4359f PDF

    a/TDA 8309

    Abstract: CMZ5928B CMZ5920B CMZ5915B
    Text: LT8309 Secondary-Side Synchronous Rectifier Driver Features Description Works with DCM and BCM/CrCM Conduction Mode Flyback Topologies n V : 4.5V to 40V CC n Supports Up to 150V MOSFETs n 26ns Turn-Off Propagation Delay n Accurate Minimum On and Off Timers for Reliable


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    LT8309 OT-23 LT3573/LT3574/ LT3575 LT3757A/LT3759/ LT3758 0V/100V LT8302 com/LT8309 a/TDA 8309 CMZ5928B CMZ5920B CMZ5915B PDF

    Untitled

    Abstract: No abstract text available
    Text: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and


    OCR Scan
    SM5819 40Vtms BT2222A BT2907A BT3904 BT3906 PDF

    Circuit diagram of 12v 1W LED driver

    Abstract: 12V 1W LED DRIVER r4 4.7k 4148 diode 3W LED
    Text: Advanced Power Electronics Corp. APE1832 2A, 0.25V FEEDBACK VOLTAGE STEP-DOWN SWITCHING REGULATORS FOR LED DRIVER FEATURES DESCRIPTION APE1832 consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal PMOS and


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    APE1832 330KHz APE1832 1832M Circuit diagram of 12v 1W LED driver 12V 1W LED DRIVER r4 4.7k 4148 diode 3W LED PDF

    PG-SOT-23

    Abstract: TLI4961-1M
    Text: TLI4961-1M High Precision Hall Effect Latch for Industrial Applications Data Sheet Revision 1.0, 2012-07-26 Sense & Control Edition 2012-07-26 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    TLI4961-1M OT23-TP PG-SOT23-3-15 PG-SOT23-3-15 PG-SOT-23 TLI4961-1M PDF

    IDTP9090

    Abstract: No abstract text available
    Text: High and Low Side N-Channel Gate Driver Product Datasheet IDTP9090 Features Description • Input Voltage Range: 4.5 to 5.5 • Output Voltage Range: Control Range 0-30V  Peak MOSFET Drive current into 3nF • LGDRV Sink 3A  LGDRV Source 1A  UGDRV Sink


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    IDTP9090 IDTP9090 PDF

    marvell 88EM8081

    Abstract: TS321LT Led driver schematic 12v 6A flyback
    Text: Cover 88EM8080/88EM8081 LED Power Supply Controller for Flyback Converters with Power Factor Correction Datasheet Customer Use Doc. No. MV-S106340-01, Rev. B August 6, 2010 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8080/88EM8081


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    88EM8080/88EM8081 MV-S106340-01, 88EM8080/88EM8081 MV-S106340-01 marvell 88EM8081 TS321LT Led driver schematic 12v 6A flyback PDF

    Date Code Marking STMicroelectronics

    Abstract: STMicroelectronics DIODE marking code STMicroelectronics marking code date STMicroelectronics marking code date diode LDP24AS Date Code Marking STMicroelectronics diode
    Text: LDP24AS  TRANSIL LOAD DUMP PROTECTION FEATURES TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE COMPLIANT WITH MAIN STANDARDS SUCH AS: -ISO / DTR 7637 DESCRIPTION


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    LDP24AS Date Code Marking STMicroelectronics STMicroelectronics DIODE marking code STMicroelectronics marking code date STMicroelectronics marking code date diode LDP24AS Date Code Marking STMicroelectronics diode PDF

    88EM8081

    Abstract: TS321LT 88EM8080 marvell 88EM8081 Led driver schematic nonisolated led driver 0.1uF capicitor 11 kv vfd 88 Marvell qdeo
    Text: Cover 88EM8080/88EM8081 LED Power Supply Controller for Flyback Converters with Power Factor Correction Datasheet Customer Use Only Doc. No. MV-S106340-01, Rev. C August 27, 2010 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8080/88EM8081


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    88EM8080/88EM8081 MV-S106340-01, 88EM8080/88EM8081 MV-S106340-01 88EM8081 TS321LT 88EM8080 marvell 88EM8081 Led driver schematic nonisolated led driver 0.1uF capicitor 11 kv vfd 88 Marvell qdeo PDF

    Irf 1540 G

    Abstract: Irf 1540 irf 30A HFA16PB120 IRFP250
    Text: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI


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    -95686A HFA30PB120PbF 120nC O-247AC HFA16PB120 Irf 1540 G Irf 1540 irf 30A IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -95686 HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI


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    HFA30PB120PbF 120nC O-247AC HFA16PB120 O-247AC PDF

    Untitled

    Abstract: No abstract text available
    Text: LDP24AS TRANSIL LOAD DUMP PROTECTION . . . FEATURES TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE COMPLIANT WITH MAIN STANDARDS SUCH AS: -ISO / DTR 7637


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    LDP24AS PDF

    4321F

    Abstract: TG12 LT432
    Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and


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    LT4321 RJ-45 LT4321 LTC4355 LTC4359 LTC4290/LTC4271 4321f com/LT4321 4321F TG12 LT432 PDF

    47N60S5

    Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
    Text: SPW47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


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    SPW47N60S5 P-TO247 SPWx0N60S5 Q67040-S4240 47N60S5 47N60S5 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s PDF

    47N60S5

    Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
    Text: SPW47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


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    SPW47N60S5 SPWx0N60S5 P-TO247 47N60S5 Q67040-S4240 SPW47N60S5 47N60S5 47N60 F47A DT 94 47n60s5 to247 PDF