marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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C405
Abstract: CMPSH05-4C
Text: CMPSH05-4C SURFACE MOUNT DUAL, COMMON CATHODE HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE SOT-23F CASE MARKING CODE: C405 Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH05-4C is a Dual, Common Cathode HIGH CURRENT, LOW VF 40 volt Schottky Diode
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CMPSH05-4C
OT-23F
CMPSH05-4C
100mA
500mA
14-September
C405
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G098PU25W
Abstract: No abstract text available
Text: G098PU25W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 5 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking
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G098PU25W
G098PU25W
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G098PU322W
Abstract: No abstract text available
Text: G098PU322W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 22 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking
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G098PU322W
G098PU322W
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G098PU312W
Abstract: No abstract text available
Text: G098PU312W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 12 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking
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G098PU312W
G098PU312W
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DIODE SCHOTTKY 40V 500MA
Abstract: C405 CMPSH05-4C DIODE 4C
Text: CMPSH05-4C SURFACE MOUNT DUAL, COMMON CATHODE HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH05-4C is a Dual, Common Cathode HIGH CURRENT, LOW VF 40 volt Schottky Diode pair packaged in a space saving
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CMPSH05-4C
CMPSH05-4C
OT-23F
100mA
500mA
27-January
DIODE SCHOTTKY 40V 500MA
C405
DIODE 4C
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Untitled
Abstract: No abstract text available
Text: CMPSH05-4C SURFACE MOUNT DUAL, COMMON CATHODE HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH05-4C is a Dual, Common Cathode HIGH CURRENT, LOW VF 40 volt Schottky Diode pair packaged in a space saving
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CMPSH05-4C
CMPSH05-4C
OT-23F
500mA
100mA
27-January
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marking code C4s
Abstract: marking code 4A 305 MARKING CODE MARKING 4a MARKING CODE VF schottky marking code PD transistor C4C k DIODE MARKING CODE F1 4a marking common anode schottky power
Text: Central CMUSH2-4 CMUSH2-4A CMUSH2-4C CMUSH2-4S SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4 Series types are Silicon Schottky Diodes, epoxy molded in a ULTRAmini™ SOT-523 surface
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OT-523
100mA
31-January
marking code C4s
marking code 4A
305 MARKING CODE
MARKING 4a
MARKING CODE VF
schottky marking code PD
transistor C4C k
DIODE MARKING CODE F1
4a marking
common anode schottky power
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marking code C4s
Abstract: 330 marking diode marking code 4A MARKING CODE VF marking code 535 DUAL SURFACE MOUNT DIODE
Text: CMUSH2-4 CMUSH2-4A CMUSH2-4C CMUSH2-4S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4 Series types are Silicon Schottky Diodes, epoxy molded in a ULTRAmini SOT-523 surface mount package,
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OT-523
marking code C4s
330 marking diode
marking code 4A
MARKING CODE VF
marking code 535
DUAL SURFACE MOUNT DIODE
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marking 535
Abstract: marking code 4A marking code C4s 305 marking code 4A MARKING marking code 535
Text: CMUSH2-4 CMUSH2-4A CMUSH2-4C CMUSH2-4S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4 series types are silicon Schottky diodes, epoxy molded in a ULTRAmini SOT-523 surface mount package,
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PDF
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OT-523
100mA
marking 535
marking code 4A
marking code C4s
305 marking code
4A MARKING
marking code 535
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Untitled
Abstract: No abstract text available
Text: CMUSH2-4 CMUSH2-4A CMUSH2-4C CMUSH2-4S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4 series types are silicon Schottky diodes, epoxy molded in a ULTRAmini SOT-523 surface mount package,
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OT-523
100mA
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Untitled
Abstract: No abstract text available
Text: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation
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VS-4CSH02-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-4CSH01-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation
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Original
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PDF
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VS-4CSH02-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-4CSH01-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K K Anode 1 Cathode Anode 2 • Specified for output and snubber operation
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Original
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PDF
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VS-4CSH01HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-4CSH02HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation
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Original
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PDF
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VS-4CSH02-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-4CSH02HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2
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OCR Scan
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PDF
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OT-23
OT-23
MMBD2836
MBAW56
MMBD2835
MBAV74
MMBD2838
MBAV70
MMBD2837
MMBD6100
MMBD501
MMBV2098
MBAV99
A5 sot-23 single DIODE
MMBV105G
MMBV2097
A5 sot-23 DIODE
MBAS16
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CCD GFT
Abstract: ERD31 SS53 40114 JD51
Text: ERD31 i.5A t> £ : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current H igh voltage by mesa design 'M is ttte •h ' j — Y - j - 0 High reliability 031-04 , (-«HtflE* i ±W : f t ] ■T«J lOfl-Q. Hfl-«. I2A- : Applications ■■Œî'9^
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OCR Scan
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PDF
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ERD31
CCD GFT
ERD31
SS53
40114
JD51
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