BAW78M
Abstract: SCT595 78-AD
Text: BAW78M Silicon Switching Diode 4 Switching applications 5 High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage
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BAW78M
VPW05980
SCT595
Aug-21-2001
EHB00047
EHB00048
BAW78M
SCT595
78-AD
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SCT-595
Abstract: 78-AD
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPW05980
SCT-595
Oct-08-1999
EHB00047
EHB00048
SCT-595
78-AD
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Untitled
Abstract: No abstract text available
Text: BGX400. Silicon Switching Diode Switching applications High breakdown voltage Halfbridge rectifier BGX400 3 D 1 D 2 1 2 Type BGX400 Package SOT23 Configuration halfbrigde Marking GXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX400.
BGX400
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a1 sot23
Abstract: BGX400
Text: BGX400 Silicon Switching Diodes 3 Switching applications High breakdown voltage Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BGX400
VPS05161
EHA07365
Aug-20-2001
a1 sot23
BGX400
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Q62702-A3471
Abstract: SCT-595
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings
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VPW05980
Q62702-A3471
SCT-595
sold05
Jul-27-1998
EHB00047
EHB00048
Q62702-A3471
SCT-595
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a1 sot-23
Abstract: No abstract text available
Text: BGX 400 Silicon Switching Diodes 3 Switching applications High breakdown voltage Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05161
EHA07365
OT-23
Nov-16-2000
a1 sot-23
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diode 78a
Abstract: tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A
Text: BAS78A.BAS78D Silicon Switching Diodes Switching applications 4 High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C
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BAS78A.
BAS78D
VPS05163
EHA00004
BAS78A
OT223
BAS78B
BAS78C
diode 78a
tr 30 f 124
BAS78A
BAS78B
BAS78C
BAS78D
VPS05163
DIODE marking 78A
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diode 78a
Abstract: 78ad VPS05163 SOT 78B BAS 16 MARKING DIODE marking 78A marking 78ad
Text: BAS 78A . BAS 78D Silicon Switching Diodes • Switching applications 4 • High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS 78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78B BAS 78B 1=A 2=C 3 = n.c. 4 = C
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VPS05163
EHA00004
OT-223
EHN00020
100ns,
Oct-07-1999
EHB00046
diode 78a
78ad
VPS05163
SOT 78B
BAS 16 MARKING
DIODE marking 78A
marking 78ad
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ga sot-89
Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Text: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C
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VPS05162
EHA07007
OT-89
EHB00094
EHB00095
EHB00096
EHB00097
ga sot-89
SOT89 marking GA
diode 78a
SOT89 marking GD
MARKING GA SOT-89
marking GC diode
baw 78b
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silent relay
Abstract: H3AA012 CQC 24vdc relay datasheet H3 marking CSA22 EN61810-1 FTR-H3AA012V VDE0435 FUJITSU RELAY 5 pin relay 6vdc
Text: FTR-K1 SERIES SILENT POWER RELAY 1 POLE - 78A/120A Inrush Current Type FTR-H3 Series n FEATURES Pin compatible with widely used VS and FTR-H1 series power relays l Silent relay with patented unique U-shape spring. Noise level ≈ 50dB at 5cm. l Low profile height 18.8 mm / cadmium free contacts
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8A/120A
250VAC,
530mW)
UL508,
CSA22
silent relay
H3AA012
CQC 24vdc relay datasheet
H3 marking
EN61810-1
FTR-H3AA012V
VDE0435
FUJITSU RELAY
5 pin relay 6vdc
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DIODE marking 78A
Abstract: FTR-K1
Text: FTR-K1 SERIES SILENT POWER RELAY 1 POLE - 78A/120A Inrush Current Type FTR-H3 Series n FEATURES Pin compatible with widely used VS and FTR-H1 series power relays l Silent relay with patented unique U-shape spring. Noise level ≈ 50dB at 5cm. l Low profile height 18.8 mm / cadmium free contacts
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8A/120A
250VAC,
530mW)
UL508,
CSA22
DIODE marking 78A
FTR-K1
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VDE 0435 time relay
Abstract: ED 78A relay vde 0435 DIODE marking ED 78A datasheet for 14 PIN 120VAC relay DIN 3021 STANDARD H3 marking CSA22 FTR-H3AA005V FTR-H3AA009V
Text: SILENT POWER RELAY 1 POLE— 78A/120A INRUSH CURRENT TYPE FTR-H3 SERIES RoHS compliant n FEATURES Pin compatible with widely used VS and FTR-H1 series power relays l Ultra silent relay with patented unique U-shape spring. Noise level is about 50dB at 5cm.
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8A/120A
250VAC,
530mW)
UL508,
CSA22
VDE 0435 time relay
ED 78A
relay vde 0435
DIODE marking ED 78A
datasheet for 14 PIN 120VAC relay
DIN 3021 STANDARD
H3 marking
FTR-H3AA005V
FTR-H3AA009V
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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FTR-K1CK012W
Abstract: ftr-k1ak012t fujitsu FTR-K1AK028T FTR-K1AL048W-LB
Text: FTR-K1 SERIES POWER RELAY 1 POLE - 16A LOW PROFILE TYPE RoHS Compliant FTR-K1 Series • FEATURES ● ● ● ● ● ● ● Low profile height: 15.7mm HIGH ISOLATION5 Insulation Distance (between coil and contacts: 10mm min.) Dielectric strength: 5KV Surge strength: 10KV
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FDD6676A
Abstract: FDD6676AS
Text: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676AS
FDD6676AS
FDD6676A
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Untitled
Abstract: No abstract text available
Text: IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PG42UDPbF
IRG7PG42UD-EPbF
IRG7PG42UDPbF/IRG7PG42UD-EPbF
O-247AC
JESD47F)
O-247AD
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TV-5 18VDC
Abstract: FTR-K1CK012W FTR-K1AK028T TV-5120VAC CK005
Text: FTR-K1 SERIES POWER RELAY 1 POLE - 16A LOW PROFILE TYPE RoHS compliant FTR-K1 Series n FEATURES Low profile height: 15.7mm l HIGH ISOLATION5 Insulation Distance (between coil and contacts: 10mm min.) Dielectric strength: 5KV Surge strength: 10KV l Class F coil
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IRFB30
Abstract: AN-994
Text: PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB3004PbF
IRFS3004PbF
IRFSL3004PbF
340Ac
O-220AB
O-262
Maximu30
IRFB30
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB3004PbF
IRFS3004PbF
IRFSL3004PbF
340Ac
O-220AB
O-262
EIA-418.
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FDD6644
Abstract: FDD6644S
Text: FDD6644S 30V N-Channel PowerTrench MOSFET General Description Features The FDD6644S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6644S
FDD6644S
O-252
O-252)
FDD6644
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Untitled
Abstract: No abstract text available
Text: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676AS
FDD6676AS
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FDD6676S
Abstract: FDS6676S
Text: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676S
FDS6676S
FDD6676S
O-252
O-252)
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ci 4946
Abstract: IRG7PH42UD-EP irg7ph42ud-e IRG7PH42UDPBF
Text: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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97391B
IRG7PH42UDPbF
IRG7PH42UD-EP
O-247AD
ci 4946
IRG7PH42UD-EP
irg7ph42ud-e
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2=C 3 n.c. Package 4 n.c. 5=C SCT-595 Maximum Ratings Parameter Symbol
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Q62702-A3471
SCT-595
100ns,
EHB00048
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