FMB-29
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMB-29 1. Scope The present specifications shall apply to an FMB-29. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040512 1／5
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FMB-29
FMB-29.
UL94V-0
FMB29
FMB-29
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FML-23S
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FML-23S 1. Scope The present specifications shall apply to an FML-23S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 041013 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
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FML-23S
FML-23S.
UL94V-0
FML23S
FML-23S
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FMB-G24H
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMB-G24H 1. Scope The present specifications shall apply to an FMB-G24H. 2. Outline 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability UL94V-0 Equivalent 040220 1／5
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FMB-G24H
FMB-G24H.
UL94V-0
FMBG24
FMB-G24H
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marking CODE GA
Abstract: 83CNQ100A GA 89 40HFL40S02 83CNQ080GA 83CNQ100GA 3M LOT CODE MARKING D-61-8 case weight
Text: Preliminary Data Sheet PD-20809 09/04 83CNQ.GA 83CNQ.GASM 83CNQ.GASL 80 Amp SCHOTTKY RECTIFIER New GenIII D-61 Package IF AV = 80Amp VR = 80-100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular
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PD-20809
83CNQ.
80Amp
0-100V
D-61-8
D61-8-SL
D61-8-SM
marking CODE GA
83CNQ100A
GA 89
40HFL40S02
83CNQ080GA
83CNQ100GA
3M LOT CODE MARKING
D-61-8 case weight
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AP01C
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. AP01C 1. Scope The present specifications shall apply to an AP01C. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040722 1／4 61426-01 SANKEN ELECTRIC CO., LTD.
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AP01C
AP01C.
UL94V-0
AP01C
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.490 rev. I 07/04 30BQ015 3 Amp SCHOTTKY RECTIFIER IF AV = 3.0Amp VR = 15V Description/ Features Major Ratings and Characteristics The 30BQ015 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very
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30BQ015
30BQ015
08-Mar-07
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EU02Z
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. EU02Z 1. Scope The present specifications shall apply to an EU02Z. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 041221 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
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EU02Z
EU02Z.
UL94V-0
EU02Z
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HBFP-0450
Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz
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HBFP-0450
SC-70
OT-343)
HBFP-0450
5968-5434E
5988-0133EN
35-689
HBFP-0450-BLK
CMP10
CMP12
55 ic Sot-343
HBFP0450TR1
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EU02A
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. EU02A 1. Scope The present specifications shall apply to an EU02A. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040708 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
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EU02A
EU02A.
UL94V-0
EU02A
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. AK09 1. Scope The present specifications shall apply to an AK09. 2. Outline 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability UL94V-0 Equivalent 040512 1／5 61426-01
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UL94V-0
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Untitled
Abstract: No abstract text available
Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz
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HBFP-0450
SC-70
OT-343)
HBFP-0450
5968-2070E
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Diode d29 08
Abstract: ZENER B18 zener b27 zener diode c20 zener diode c30 D2118 D1247 C18 zener DIODE B36 zener B51
Text: AZ23 Series Dual Common-Anode Zener Diodes VZ Range 2.7 to 51V Power Dissipation 300mW TO-236AB SOT-23 .122 (3.1) .110 (2.8) Mounting Pad Layout .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95)
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300mW
O-236AB
OT-23)
OT-23
E8/10K
30K/box
Diode d29 08
ZENER B18
zener b27
zener diode c20
zener diode c30
D2118
D1247
C18 zener
DIODE B36
zener B51
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kraus naimer CA 10
Abstract: kraus and Naimer cg4-1 rotary switch kraus and Naimer cg4 CEE24 VDE 0660 -107 kraus and Naimer 7045101K Kraus Naimer CAM 704-9890 VDE 0660 kraus and Naimer CEE 24
Text: EAO Product Information 5AHEAI " Switches and Indicators 04 Switches and Indicators Index Series 04 Description Page 67 Product Assembly Page 68 Mounting Instruction Page 71 Product Range - pushbuttons for standard mounting - pushbuttons for flush mounting
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Untitled
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-04 : 4W POWER Hi-Rel Grade Single, Bi & Triple Outputs Metallic Case - 1 500 VDC Isolation • 28 Vdc input compliant with MIL-STD-704 D/E • Low profile : 0,3‘’ 7.5mm • Nominal power of 4W without derating • Wide temperature range : -40°C/+105°C case
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MGDM-04
MIL-STD-704
DIL24
MGDM-04
FC97-008
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Untitled
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-04 : 4W POWER Hi-Rel Grade Single, Bi & Triple Outputs Metallic Case - 1 500 VDC Isolation • 28 Vdc input compliant with MIL-STD-704 D/E • Low profile : 0,3‘’ 7.5mm • Nominal power of 4W without derating • Wide temperature range : -40°C/+105°C case
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MGDM-04
MIL-STD-704
DIL24
MGDM-04
FC97-008
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Untitled
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-04 : 4W POWER Hi-Rel Grade Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28 Vdc input compliant with MIL-STD-704 D/E • Low profile : 0,3‘’ 7.5mm • Nominal power of 4W without derating • Wide temperature range : -40°C/+105°C case
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MGDM-04
MIL-STD-704
DIL24
MGDM-04
FC97-008
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6r385P
Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description
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IPL60R385CP
150mm²
6r385P
IPL60R385CP
JESD22
EL series small size SMD transistor
infineon msl
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stk 4060
Abstract: SK 69 DIODE KH63 SDB0 20690 108-60 24512 STK 2
Text: 042542_ContaClip_07_094b119_GB 04.11.2004 13:08 Uhr Seite 94 CONTA-CONNECT Fuse disconnect terminals Screw connection system SIK 10 SIK 10 SIK 10/LED Insulating terminal housing PA 6.6 VO Rail mount on TS 15 / TS 32 / TS 35 M4 M4 M4 Connection diagram Connection type
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094b119
10/LED
stk 4060
SK 69 DIODE
KH63
SDB0
20690
108-60
24512
STK 2
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6R380e6
Abstract: IPA60R380E6 IPP60R380E6 IPA60R380C6 JESD22 IPP60R380E TO-220 package thermal resistance
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6
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IPx60R380E6
IPP60R380E6,
IPA60R380E6
6R380e6
IPA60R380E6
IPP60R380E6
IPA60R380C6
JESD22
IPP60R380E
TO-220 package thermal resistance
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smd transistor w1a
Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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CX-49G,
CX-40F
HC-49/U
HC-49U-S
31-Dec-04
CX-49L
smd transistor w1a
smd transistor w1a 25
W1A smd transistor
smd transistor gz
smd transistor marking A14
SMD W1A transistor
AVX tantalum marking
MARKING w1a SOT-23
smd transistor w1a 50
marking code NJ SMD Transistor
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diode A610
Abstract: IP220-WI 5750600530 57.802.2353.0 250-0120 57.806.1053.0 5700300 71350 54-035 Z7.210.5027.0
Text: 210 Index rei. no. 01.001.5553.0 01.001.5653.0 01.001.5753.0 01.001.5853.0 01.001.6253.0 01.001.6353.0 01.001.6453.0 01.001.6553.0 01.001.6653.0 01.001.6753.0 01.108.3253.0 02.123.7021.0 02.123.7121.0 02.123.7221.0 02.123.7321.0 02.123.7421.0 02.124.0929.0
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S2L20U
Abstract: No abstract text available
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package : AX10 S2L20U Unit : mm W eight 0.65g Typ> 2 0 0 V 1.5A Feature 26.5 • Low Noise • tnr=35ns • s v -r x • trr=35ns (.1 • 7 5 'T /n - J b •iS te .F A (R 4 - 2 - * «•ríüíiidíiiiiM Marking
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S2L20U
CJ533-1
S2L20U
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diode N 4007
Abstract: Z7 DIODE n 4007 marking VB DIODE 9006 din 4007 st z7
Text: Modular Terminal for Plug-in Diode with Universal Foot Wire Size CSA UL_ Approvals width/wire strip length 4 mm2 fine stranded 4 250V 20-10 AWG 6.3A 300V 22-10 AWG 10A width 6 mm wire strip length 9 mm U-foot 4 mm2 solid 6 fine stranded 4
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IRF1010E
Abstract: *f1010e T0-262 EIA marking code RV surface mount diode
Text: PD- 9.1720 In te rn a tio n a l I ö R Rectifier IR F 1 0 1 0 E S /L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF101OES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRF101OES)
IRF1010EL)
IRF1010E
*f1010e
T0-262
EIA marking code RV surface mount diode
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