philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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E72873
Abstract: VUB116-16NOXT
Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product
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116-16NOXT
VUB116-16NOXT
E72873
20110907b
E72873
VUB116-16NOXT
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BY228
Abstract: diode SOD 64 BYW56 SOD-64 BYW56 V SOD57 diode v
Text: Marking on Rectifiers Vishay Semiconductors Standard Avalanche Sinterglass Diode V V BY228 BYW56 17208 17207 SOD-57 SOD-64 Fig. 1 - Document Number: 84085 Rev. 1.0, 26-Feb-10 Fig. 2 - For technical questions, contact: DiodesSSP@Vishay.com www.vishay.com 1
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BY228
BYW56
OD-57
OD-64
26-Feb-10
BY228
diode SOD 64
BYW56
SOD-64
BYW56 V
SOD57
diode v
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marking code R5 sot23
Abstract: R5 SOT 820 marking MARKING CODE VF CBAS17
Text: Central CBAS17 TM Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE
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CBAS17
OT-23
100mA
marking code R5 sot23
R5 SOT
820 marking
MARKING CODE VF
CBAS17
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A6 sot-23
Abstract: BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16
Text: BAS16 SOT 23 High Speed Switching Diodes Feature: • Silicon Planar Epitaxial High-Speed Diode. Package Outline Details Marking BAS16 = A6 Pin configuration 1 = Anode 2 = NC 3 = Cathode Dimensions : Millimetres Absolute Maximum Ratings Limiting values Symbol
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BAS16
A6 sot-23
BAS16 sot-23
cd 5411
marking 855 sot 353
MARKING 358 sot-23
BAS16
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745 diode
Abstract: 820 marking CBAS17 CR265
Text: Central TM Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25oC
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CBAS17
OT-23
100mA
745 diode
820 marking
CBAS17
CR265
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powerex R9G0 2100
Abstract: R9GO 21-XX
Text: R9G0_21XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 2100 Amperes 2200 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage
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Untitled
Abstract: No abstract text available
Text: R9G0_21XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 2100 Amperes 2200 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage
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DIODE BAT
Abstract: Q62702-A0960 sod-123 marking code 621 621 marking diode
Text: Silicon Schottky Diode BAT 14-098 Preliminary Data DBS mixer application to 12 GHz ● Low noise figure ● Medium barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-098
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Q62702-A0960
OD-123
DIODE BAT
Q62702-A0960
sod-123 marking code 621
621 marking diode
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marking r4 diode
Abstract: 820 marking CBAS17
Text: Central TM Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE MAXIMUM RATINGS: TA=25°C unless otherwise noted
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CBAS17
OT-23
100mA
marking r4 diode
820 marking
CBAS17
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VCUT07B1-HD1
Abstract: VCUT07B1
Text: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code
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VCUT07B1-HD1
LLP1006-2L
LLP1006-2L
2011/65/EU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VCUT07B1-HD1
VCUT07B1
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Untitled
Abstract: No abstract text available
Text: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code
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VCUT07B1-HD1
LLP1006-2L
LLP1006-2L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. % SOT-23 CASE MAXIMUM RATINGS TA=25°C
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CBAS17
TheCENTRALSEMICONDUCTORCBAS17
OT-23
100mA
820ing
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R5 SOT23
Abstract: No abstract text available
Text: Central CBAS17 Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE
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CBAS17
OT-23
100mA
CPD63
OT-23
R5 SOT23
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. C B AS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS
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CBAS17
OT-23
100nction
100mA
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C
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CBAS17
OT-23
100mA
G0D171S
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Untitled
Abstract: No abstract text available
Text: Central' Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C
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CBAS17
OT-23
100mA
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 14-098 Preliminary Data • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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PDF
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Q62702-A0960
OD-123
EH007100
fl23Sb05
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sot-23 marking code T25
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE MAXIMUM RATINGS: T^=25°C unless otherwise noted
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CBAS17
OT-23
100mA
OT-23
sot-23 marking code T25
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SCHOTTKY DIODE SOT-143
Abstract: diode marking 74 schottky marking code PD
Text: Central Sem iconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR CMFSH-3i type is a Silicon Dual Isolated Schottky diode designed for surface mount fast switching appIications requ iring a low forward vo Itage drop. Marking Code is C3l. MAXIMUM RATINGS TA=25°C
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OT-143
100mA
350SYMBOL
SCHOTTKY DIODE SOT-143
diode marking 74
schottky marking code PD
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marking JT
Abstract: 28 MARKING Q62702-A77
Text: BAS 28 Silicon Switching Diode Array • • For high-speed switching Electrically isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAS 28 JT Q62702-A163 Q62702-A77 SOT 143 Maximum ratings Parameter
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Q62702-A163
Q62702-A77
I-150
marking JT
28 MARKING
Q62702-A77
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Untitled
Abstract: No abstract text available
Text: Central TM Sem i c o n d u c t o r C o r p . CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE
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CBAS17
CBAS17
OT-23
100mA
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