philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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DIODE BAT
Abstract: Q62702-A0960 sod-123 marking code 621 621 marking diode
Text: Silicon Schottky Diode BAT 14-098 Preliminary Data DBS mixer application to 12 GHz ● Low noise figure ● Medium barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-098
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Q62702-A0960
OD-123
DIODE BAT
Q62702-A0960
sod-123 marking code 621
621 marking diode
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S11-Parameters
Abstract: VR 12750 Q62702-A0062 ts 083 diode 6390 ua 7230 c
Text: Silicon Schottky Diode BAT 15-098 Preliminary Data DBS mixer application to 10 GHz Low noise figure ● Low barrier type ● ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration tape and reel
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Q62702-A0062
OD-123
S11-Parameters
VR 12750
Q62702-A0062
ts 083
diode 6390
ua 7230 c
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9620* diode
Abstract: SCHOTTKY DIODE SOT-143 Q62702-A3461 14099
Text: Silicon Dual Schottky Diode BAT 14-099 DBS mixer application to 12 GHz ● Low noise figure ● Medium barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099 S9 Pin Configuration
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Q62702-A3461
OT-143
9620* diode
SCHOTTKY DIODE SOT-143
Q62702-A3461
14099
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A1104
Abstract: sod323 diode marking code AC
Text: BAT 15-03W Silicon Schottky Diode • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-03W P/white Q62702Q62702-A1104 Pin Configuration
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5-03W
5-03W
Q62702Q62702-A1104
OD-323
Mar-19-1996
A1104
sod323 diode marking code AC
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BB844
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage car radio
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BB844
77MHz
108MHz
15cal
BB844
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BB844
Abstract: BCW66
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
BB844
BCW66
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BB844
Abstract: BCW66 Infineon Technologies Silicon Tuning Diode
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
BB844
BCW66
Infineon Technologies Silicon Tuning Diode
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marking SOT23 V 4 diode
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
marking SOT23 V 4 diode
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Untitled
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
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Untitled
Abstract: No abstract text available
Text: PPJC7406 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-323 1.3A Current Unit : inch mm Features RDS(ON) , VGS@4.5V, ID@1.3A<77mΩ RDS(ON) , VGS@2.5V, ID@1.0A<90mΩ RDS(ON) , VGS@1.8V, ID@0.7A<120mΩ Advanced Trench Process Technology
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PPJC7406
OT-323
2011/65/EU
IEC61249
OT-323
MIL-STD-750,
2014-REV
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Untitled
Abstract: No abstract text available
Text: DMP3130L P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(on) max -30V 77mΩ@ VGS = -10V 95mΩ@ VGS = -4.5V 150mΩ@ VGS = -2.5V • ID TA = 25°C -3.5A -3.0A -2.4A Description and Applications
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DMP3130L
AEC-Q101
DS31524
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BAV 70W Silicon Switching Diode Array • For high speed switching applications >Common cathode C1/C2 _EL n r U 1 =A1 II Pin Configuration Q62702-A1030 CM Ordering Code A4s' < Marking BAV 70W CM Type Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode
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OCR Scan
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Q62702-A1030
OT-323
5B35bDS
BAV70W
flE35b05
012040D
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration
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Q62702-A0062
OD-123
EHA07001
EHD07088
fl535bQ5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 15-03W Silicon Schottky Diode • DBS mixer applications to • Low noise figure • Low barrier type ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT15-03W P/white Ordering Code Pin Configuration Package
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5-03W
Q62702-A1104
BAT15-03W
OD-323
10mA/50
235bQ5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 14-098 Preliminary Data • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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PDF
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Q62702-A0960
OD-123
EH007100
fl23Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 14-099 Silicon Dual Schottky Diode • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099
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OCR Scan
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PDF
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Q62702-A3461
OT-143
EHD07095
01BQ33E
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 15-03W Silicon Schottky Diode • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-03vJ P/white Q62702-A1104
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OCR Scan
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PDF
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5-03W
Q62702-A1104
OD-323
15-03vJ
EHD070B2
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SK 10 BAT 065
Abstract: 9620* diode sk 10 bat
Text: SIEMENS Silicon Dual Schottky Diode BAT 14-099 • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration
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OCR Scan
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PDF
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Q62702-A3461
OT-143
EH007095
SK 10 BAT 065
9620* diode
sk 10 bat
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D1980
Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Text: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated
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2SD1980F5
SC-63)
D1980
2SD1980
K35kQ
R2se300Q
2SD1980F5
2sd darlington
MARKING CODE f5
diode marking code 15h
marking 7T transistor
TRANSISTOR CD 263
2SD1980
damper diode darlington npn
transistor t f5 j
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ERA32
Abstract: T460 T151 T760 marking code CV3
Text: ERA32 ia • ftîfê '+ fè : Outline* Drawings FAST RECOVERY DIODE *3 T . \ — 28MIN — ¿08. 1 5 -28MIN— Features Super high speed switching. • 1&Vf Low VF ’ Marking A f - J - K : tt Color • a ftfttt High reliability code : Orange >> Abridged type name
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ERA32
28MIN
28MINâ
I95t/R89)
Shl50
T460
T151
T760
marking code CV3
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