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    DIODE MARKING CODE A2 Y2 Search Results

    DIODE MARKING CODE A2 Y2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE A2 Y2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


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    PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


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    PDF MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749

    MOSFET MARK y2

    Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


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    PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC H01N60I, H01N60J MOSFET MARK y2 H01N60I MOSFET MARK H1 H01N60J TL 434 mosfet sn60

    A/mbr+0450

    Abstract: No abstract text available
    Text: MBR10100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100 2x5 Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use


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    PDF MBR10100C 150oC O-220-3 O-220F-3 DS36953 A/mbr+0450

    Untitled

    Abstract: No abstract text available
    Text: MBR20100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100V 2x10A Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use


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    PDF MBR20100C 2x10A 150oC O-220-3 O-220F-3 DS36950

    H50N03J

    Abstract: MOSFET N 30V 30A 252
    Text: HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H50N03J H50N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 50A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate


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    PDF MOS200514 H50N03J H50N03J O-252 other50oC 200oC 183oC 217oC 260oC 245oC MOSFET N 30V 30A 252

    marking code k1

    Abstract: marking A1 TRANSISTOR marking y1 HI122
    Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.


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    PDF HI200102 HI122 O-251 HI122 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR marking y1

    HJ127

    Abstract: marking code 8A
    Text: HI-SINCERITY Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 • High DC current gain • Built-in a damper diode at E-C Darlington Schematic


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    PDF HE6017 HJ127 O-252 183oC 217oC 260oC HJ127 marking code 8A

    a5 marking

    Abstract: vhc 50
    Text: MC74VHC50 Hex Buffer The MC74VHC50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems


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    PDF MC74VHC50 MC74VHC50 VHC50 AND8004/D a5 marking vhc 50

    SC88 MARKING A2

    Abstract: NL27WZ07
    Text: NL27WZ07 Dual Buffer with Open Drain Outputs The NL27WZ07 is a high performance dual buffer with open drain outputs operating from a 2.3 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level.


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    PDF NL27WZ07 NL27WZ07 NL27WZ07DFT2 NL27WZ07DTT1 SC88 MARKING A2

    Untitled

    Abstract: No abstract text available
    Text: NL37WZ06 Triple Inverter with Open Drain Outputs The NL37WZ06 is a high performance triple inverter with open drain outputs operating from a 2.3 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output


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    PDF NL37WZ06 NL37WZ06 NL37WZ06US

    095b3

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN6A09K Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V Features and Benefits Max RDS on 40mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V Max ID TA = 25°C (Note 3) 7.7A 6.3A • Low on-resistance • Fast switching speed


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    PDF ZXMN6A09K AEC-Q101 DS33569 095b3

    TO252-3L

    Abstract: DSR6U600D1 DSR6U600D1-13 DIODE MARKING CODE B3
    Text: DSR6U600D1 6A DIODESTAR RECTIFIER Features NEW PRODUCT • • • Mechanical Data TM DIODESTAR is a Proprietary Process for High Voltage Rectifiers which Delivers: • Ultra-Fast Reverse Recovery trr < 30ns Giving a Rapid Switching Response • Soft Recovery for Low EMI Noise


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    PDF DSR6U600D1 O252-3L) J-STD-020 MIL-STD-202, DS33405 TO252-3L DSR6U600D1 DSR6U600D1-13 DIODE MARKING CODE B3

    GUO40-16

    Abstract: GUO40-16N GUO40-12NO1 guo40 e3266 GUO4016 GUO40-08NO1
    Text: GUO40-12NO1 3~ Rectifier Standard Rectifier VRRM = 1200 V IDAV = IFSM = 370 A 40 A 3~ Rectifier Bridge Part number GUO40-12NO1 Backside: isolated E326641 _ ~~~ + Features / Advantages: Applications: Package: ● Low forward voltage drop ● Planar passivated chips


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    PDF GUO40-12NO1 E326641 60747and 20110310a GUO40-16 GUO40-16N GUO40-12NO1 guo40 e3266 GUO4016 GUO40-08NO1

    GUO40-08NO1

    Abstract: No abstract text available
    Text: GUO40-08NO1 3~ Rectifier Standard Rectifier VRRM = 800 V I DAV = 40 A I FSM = 370 A 3~ Rectifier Bridge Part number GUO40-08NO1 Backside: isolated E326641 - ~ ~ ~ + Features / Advantages: Applications: Package: GUFP ● Low forward voltage drop ● Planar passivated chips


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    PDF GUO40-08NO1 E326641 60747and 20130527b GUO40-08NO1

    GUO40-08NO1

    Abstract: GUO40-12NO1
    Text: GUO40-12NO1 3~ Rectifier Standard Rectifier VRRM = 1200 V I DAV = 40 A I FSM = 370 A 3~ Rectifier Bridge Part number GUO40-12NO1 Backside: isolated E326641 - ~ ~ ~ + Features / Advantages: Applications: Package: GUFP ● Low forward voltage drop ● Planar passivated chips


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    PDF GUO40-12NO1 E326641 60747and 20130527b GUO40-08NO1 GUO40-12NO1

    KZ3 SOT23

    Abstract: KZ8 SOT23 KZ1 sot23 KZ7 sot23 diode kz4 y8 zener KY3 SOT23 KZ9 Y6 Y6 kz4 KZ4 SOT23 KY2 SOT23
    Text: BZX84C2V7BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V – 51V Ideally suited for automated assembly processes 94 8550 Order Instruction Type BZX84C2V7


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    PDF BZX84C2V7 BZX84C51 BZX84C2V7 D-74025 12-Mar-01 KZ3 SOT23 KZ8 SOT23 KZ1 sot23 KZ7 sot23 diode kz4 y8 zener KY3 SOT23 KZ9 Y6 Y6 kz4 KZ4 SOT23 KY2 SOT23

    Transmission Lines and Terminations with Philips Advanced Logic Families

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS 74LVT86 3.3V Quad 2-input exclusive-OR gate Product specification IC24 Data Handbook Philips Semiconductors 1996 Sep 10 Philips Semiconductors Product specification 3.3V Quad 2-input exclusive-OR gate QUICK REFERENCE DATA SYMBOL tPLH tPHL


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    PDF 74LVT86 74LVT86 01-Jan-98) Transmission Lines and Terminations with Philips Advanced Logic Families

    UMG1

    Abstract: NLU2G04MUTCG JESD78
    Text: NLU2G04 Dual Inverter The NLU2G04 is an advanced high-speed CMOS dual inverter in ultra-small footprint. The NLU2G04 input and output structures provide protection when voltages up to 7.0 V are applied, irregardless of the supply voltage. http://onsemi.com


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    PDF NLU2G04 NLU2G04 517AA NLU2G04/D UMG1 NLU2G04MUTCG JESD78

    TL 555c AM

    Abstract: No abstract text available
    Text: NLU2G17 Dual Non-Inverting Schmitt-Trigger Buffer The NLU2G17 is an advanced high-speed CMOS dual non-inverting Schmitt-trigger buffer in ultra-small footprint. The NLU2G17 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLU2G17 517AApplicable NLU2G17/D TL 555c AM

    XTRE10B31

    Abstract: XTRM10A40 XTREC10B40 XTRE10B40 XTRE10B22 EATON XTRE10B40 XTRM10A22 XTREC10B31 XTREC10B22 XTMT6A60H70B
    Text: Tab34.book Page 2 Thursday, February 22, 2007 11:53 AM B-2 IEC Contactors & Starters XT IEC Power Control March 2007 Relays and Timers Product Description Contents Description B catalogueue Number Selection . . . . . . . . . . . . . . . Product Selection . . . . . . . . .


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    PDF Tab34 B-162 CA08102001K XTRE10B31 XTRM10A40 XTREC10B40 XTRE10B40 XTRE10B22 EATON XTRE10B40 XTRM10A22 XTREC10B31 XTREC10B22 XTMT6A60H70B

    Untitled

    Abstract: No abstract text available
    Text: NL27WZ32 Dual 2-Input OR Gate The NL27WZ32 is a high performance dual 2−input OR Gate operating from a 1.65 V to 5.5 V supply. Features • • • • • • • • • • Extremely High Speed: tPD 2.5 ns typical at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation


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    PDF NL27WZ32 NL27WZ32 NC7WZ32 NL27WZ32/D

    lvx50

    Abstract: No abstract text available
    Text: MC74LVX50 Product Preview Hex Buffer The MC74LVX50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output. The


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    PDF MC74LVX50 MC74LVX50 300mA r14525 MC74LVX50/D lvx50

    MC74VHCT50A

    Abstract: MC74VHCT50AD MC74VHCT50ADT MC74VHCT50AM Y510
    Text: MC74VHCT50A Noninverting Buffer / CMOS Logic Level Shifter with LSTTL-Compatible Inputs The MC74VHCT50A is a hex noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


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    PDF MC74VHCT50A MC74VHCT50A MC74VHCT50A/D MC74VHCT50AD MC74VHCT50ADT MC74VHCT50AM Y510