2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
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MOS200403
H02N60
O-252
200oC
183oC
217oC
260oC
245oC
H02N60I,
2N60 transistor
all transistor 2N60
transistor 2n60
02N60
2N60
MOSFET MARK y2
y1 marking code transistor
2n60 application
2n60 MOSFEt
marking code diode 648
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MOSFET MARK y2
Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab
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MOS200504
H02N60S
O-252
200oC
183oC
217oC
260oC
245oC
H02N60SI,
MOSFET MARK y2
y1 marking code transistor
marking code diode 648
PB40 bridge
mosfet k 61 y1
mosfet sn60
transistor mark code H1
diode marking code a2 y2
2N60S
marking code 749
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MOSFET MARK y2
Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
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MOS200502
H01N60
200oC
183oC
217oC
260oC
245oC
H01N60I,
H01N60J
MOSFET MARK y2
H01N60I
MOSFET MARK H1
H01N60J
TL 434
mosfet sn60
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A/mbr+0450
Abstract: No abstract text available
Text: MBR10100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100 2x5 Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use
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MBR10100C
150oC
O-220-3
O-220F-3
DS36953
A/mbr+0450
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Untitled
Abstract: No abstract text available
Text: MBR20100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100V 2x10A Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use
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MBR20100C
2x10A
150oC
O-220-3
O-220F-3
DS36950
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H50N03J
Abstract: MOSFET N 30V 30A 252
Text: HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H50N03J H50N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 50A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate
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MOS200514
H50N03J
H50N03J
O-252
other50oC
200oC
183oC
217oC
260oC
245oC
MOSFET N 30V 30A 252
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marking code k1
Abstract: marking A1 TRANSISTOR marking y1 HI122
Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.
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HI200102
HI122
O-251
HI122
183oC
217oC
260oC
marking code k1
marking A1 TRANSISTOR
marking y1
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HJ127
Abstract: marking code 8A
Text: HI-SINCERITY Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 • High DC current gain • Built-in a damper diode at E-C Darlington Schematic
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HE6017
HJ127
O-252
183oC
217oC
260oC
HJ127
marking code 8A
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a5 marking
Abstract: vhc 50
Text: MC74VHC50 Hex Buffer The MC74VHC50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems
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MC74VHC50
MC74VHC50
VHC50
AND8004/D
a5 marking
vhc 50
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SC88 MARKING A2
Abstract: NL27WZ07
Text: NL27WZ07 Dual Buffer with Open Drain Outputs The NL27WZ07 is a high performance dual buffer with open drain outputs operating from a 2.3 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level.
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NL27WZ07
NL27WZ07
NL27WZ07DFT2
NL27WZ07DTT1
SC88 MARKING A2
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Untitled
Abstract: No abstract text available
Text: NL37WZ06 Triple Inverter with Open Drain Outputs The NL37WZ06 is a high performance triple inverter with open drain outputs operating from a 2.3 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output
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NL37WZ06
NL37WZ06
NL37WZ06US
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095b3
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMN6A09K Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V Features and Benefits Max RDS on 40mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V Max ID TA = 25°C (Note 3) 7.7A 6.3A • Low on-resistance • Fast switching speed
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ZXMN6A09K
AEC-Q101
DS33569
095b3
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TO252-3L
Abstract: DSR6U600D1 DSR6U600D1-13 DIODE MARKING CODE B3
Text: DSR6U600D1 6A DIODESTAR RECTIFIER Features NEW PRODUCT • • • Mechanical Data TM DIODESTAR is a Proprietary Process for High Voltage Rectifiers which Delivers: • Ultra-Fast Reverse Recovery trr < 30ns Giving a Rapid Switching Response • Soft Recovery for Low EMI Noise
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DSR6U600D1
O252-3L)
J-STD-020
MIL-STD-202,
DS33405
TO252-3L
DSR6U600D1
DSR6U600D1-13
DIODE MARKING CODE B3
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GUO40-16
Abstract: GUO40-16N GUO40-12NO1 guo40 e3266 GUO4016 GUO40-08NO1
Text: GUO40-12NO1 3~ Rectifier Standard Rectifier VRRM = 1200 V IDAV = IFSM = 370 A 40 A 3~ Rectifier Bridge Part number GUO40-12NO1 Backside: isolated E326641 _ ~~~ + Features / Advantages: Applications: Package: ● Low forward voltage drop ● Planar passivated chips
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GUO40-12NO1
E326641
60747and
20110310a
GUO40-16
GUO40-16N
GUO40-12NO1
guo40
e3266
GUO4016
GUO40-08NO1
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GUO40-08NO1
Abstract: No abstract text available
Text: GUO40-08NO1 3~ Rectifier Standard Rectifier VRRM = 800 V I DAV = 40 A I FSM = 370 A 3~ Rectifier Bridge Part number GUO40-08NO1 Backside: isolated E326641 - ~ ~ ~ + Features / Advantages: Applications: Package: GUFP ● Low forward voltage drop ● Planar passivated chips
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GUO40-08NO1
E326641
60747and
20130527b
GUO40-08NO1
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GUO40-08NO1
Abstract: GUO40-12NO1
Text: GUO40-12NO1 3~ Rectifier Standard Rectifier VRRM = 1200 V I DAV = 40 A I FSM = 370 A 3~ Rectifier Bridge Part number GUO40-12NO1 Backside: isolated E326641 - ~ ~ ~ + Features / Advantages: Applications: Package: GUFP ● Low forward voltage drop ● Planar passivated chips
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GUO40-12NO1
E326641
60747and
20130527b
GUO40-08NO1
GUO40-12NO1
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KZ3 SOT23
Abstract: KZ8 SOT23 KZ1 sot23 KZ7 sot23 diode kz4 y8 zener KY3 SOT23 KZ9 Y6 Y6 kz4 KZ4 SOT23 KY2 SOT23
Text: BZX84C2V7–BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V – 51V Ideally suited for automated assembly processes 94 8550 Order Instruction Type BZX84C2V7
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BZX84C2V7
BZX84C51
BZX84C2V7
D-74025
12-Mar-01
KZ3 SOT23
KZ8 SOT23
KZ1 sot23
KZ7 sot23
diode kz4 y8 zener
KY3 SOT23
KZ9 Y6
Y6 kz4
KZ4 SOT23
KY2 SOT23
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Transmission Lines and Terminations with Philips Advanced Logic Families
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74LVT86 3.3V Quad 2-input exclusive-OR gate Product specification IC24 Data Handbook Philips Semiconductors 1996 Sep 10 Philips Semiconductors Product specification 3.3V Quad 2-input exclusive-OR gate QUICK REFERENCE DATA SYMBOL tPLH tPHL
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74LVT86
74LVT86
01-Jan-98)
Transmission Lines and Terminations with Philips Advanced Logic Families
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UMG1
Abstract: NLU2G04MUTCG JESD78
Text: NLU2G04 Dual Inverter The NLU2G04 is an advanced high-speed CMOS dual inverter in ultra-small footprint. The NLU2G04 input and output structures provide protection when voltages up to 7.0 V are applied, irregardless of the supply voltage. http://onsemi.com
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NLU2G04
NLU2G04
517AA
NLU2G04/D
UMG1
NLU2G04MUTCG
JESD78
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TL 555c AM
Abstract: No abstract text available
Text: NLU2G17 Dual Non-Inverting Schmitt-Trigger Buffer The NLU2G17 is an advanced high-speed CMOS dual non-inverting Schmitt-trigger buffer in ultra-small footprint. The NLU2G17 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.
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NLU2G17
517AApplicable
NLU2G17/D
TL 555c AM
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XTRE10B31
Abstract: XTRM10A40 XTREC10B40 XTRE10B40 XTRE10B22 EATON XTRE10B40 XTRM10A22 XTREC10B31 XTREC10B22 XTMT6A60H70B
Text: Tab34.book Page 2 Thursday, February 22, 2007 11:53 AM B-2 IEC Contactors & Starters XT IEC Power Control March 2007 Relays and Timers Product Description Contents Description B catalogueue Number Selection . . . . . . . . . . . . . . . Product Selection . . . . . . . . .
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Tab34
B-162
CA08102001K
XTRE10B31
XTRM10A40
XTREC10B40
XTRE10B40
XTRE10B22
EATON XTRE10B40
XTRM10A22
XTREC10B31
XTREC10B22
XTMT6A60H70B
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Untitled
Abstract: No abstract text available
Text: NL27WZ32 Dual 2-Input OR Gate The NL27WZ32 is a high performance dual 2−input OR Gate operating from a 1.65 V to 5.5 V supply. Features • • • • • • • • • • Extremely High Speed: tPD 2.5 ns typical at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation
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NL27WZ32
NL27WZ32
NC7WZ32
NL27WZ32/D
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lvx50
Abstract: No abstract text available
Text: MC74LVX50 Product Preview Hex Buffer The MC74LVX50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output. The
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MC74LVX50
MC74LVX50
300mA
r14525
MC74LVX50/D
lvx50
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MC74VHCT50A
Abstract: MC74VHCT50AD MC74VHCT50ADT MC74VHCT50AM Y510
Text: MC74VHCT50A Noninverting Buffer / CMOS Logic Level Shifter with LSTTL-Compatible Inputs The MC74VHCT50A is a hex noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS
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MC74VHCT50A
MC74VHCT50A
MC74VHCT50A/D
MC74VHCT50AD
MC74VHCT50ADT
MC74VHCT50AM
Y510
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