philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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620 diode
Abstract: marking bd SOd123 CT28 Q62702-B403 DIODE MARKING CODE BD
Text: BB 620 Silicon Variable Capacitance Diode ● BB 620 For Hyperband TV/VTR tuners, Bd I Type Marking Ordering Code tape and reel BB 620 red S Q62702-B403 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30
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Q62702-B403
OD-123
620 diode
marking bd SOd123
CT28
Q62702-B403
DIODE MARKING CODE BD
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B589
Abstract: diode 640 B589 DIODE Q62702-B589 bd 640 CT28 450KW
Text: BB 640 Silicon Variable Capacitance Diode ● BB 640 For Hyperband TV/VTR tuners, Bd I Type Ordering Code tape and reel Pin Configuration Marking 1 2 Package BB 640 Q62702-B589 C red S SOD-323 A Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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Q62702-B589
OD-323
B589
diode 640
B589 DIODE
Q62702-B589
bd 640
CT28
450KW
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Untitled
Abstract: No abstract text available
Text: BB640. Silicon Variable Capacitance Diode For Hyperband TV / VTR tuners, Bd l BB640 1 2 Type BB640 Package SOD323 Configuration single LS nH Marking 1.8 red S Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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BB640.
BB640
OD323
Nov-07-2002
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diode marking 226
Abstract: marking iNFINEON BAR63-03W sd199
Text: SD199E6327 Silicon Variable Capacitance Diode • For Hyperband TV / VTR tuners, Bd I • Large capacitance ratio, low series resistance • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 SD199 Type SD199E6327 Package SOD323 Configuration
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SD199E6327
SD199
OD323
diode marking 226
marking iNFINEON
BAR63-03W
sd199
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Untitled
Abstract: No abstract text available
Text: IXA30RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 43 A VCE sat = 1.8 V ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number IXA30RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD
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IXA30RG1200DHGLB
60747and
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Untitled
Abstract: No abstract text available
Text: IXA40RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 61 A VCE sat = 1.8 V ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number IXA40RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD
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IXA40RG1200DHGLB
60747and
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IXA20RG1200DHGLB
Abstract: BD-405
Text: IXA20RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 32 A VCE sat = 1.8 V ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number IXA20RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD
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IXA20RG1200DHGLB
60747and
IXA20RG1200DHGLB
BD-405
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Si5433DC
Abstract: Si5433DC-T1
Text: Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.040 @ VGS = -4.5 V -6.7 0.052 @ VGS = -2.5 V -5.9 0.072 @ VGS = -1.8 V -5.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BD XX Lot Traceability
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Si5433DC
Si5433DC-T1
S-21251--Rev.
05-Aug-02
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Variable Capacitance Diode BB640 • For Hyperband TV/VTR tuners, Bd I 1 Type BB640 Pin Configuration Marking Ordering Code tape and reel 1 2 Q62702-B589 C A red S . Package SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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BB640
Q62702-B589
OD-323
EHD07045
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Variable Capacitance Diode BB640 • For Hyperband TV/VTR tuners, Bd I Type BB 640 Ordering Code tape and reel 1 Q62702-B589 C Pin Configuration Marking 2 A Package red S SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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BB640
Q62702-B589
OD-323
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel G3 G4
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Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
OT-23
BAR63-04
fi235fci05
EHD07139
fl23SbOS
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marking bd SOd123
Abstract: No abstract text available
Text: SIEMENS Silicon Variable Capacitance Diode BB 620 • For Hyperband TV/VTR tuners, Bd I Type Marking Ordering Code tape and reel BB 620 red S Q62702-B403 Pin Configuration i Package1) SOD-123 2 o- -o Q W flO O O l Maximum Ratings Parameter Symbol
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Q62702-B403
OD-123
CHD07049
marking bd SOd123
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Untitled
Abstract: No abstract text available
Text: 32E D • aS3b3S0 Q Q lbSS? 7 H S I P Silicon Switching Diode Array SMBD 2837/38 _ SIEMENS/ S P C L i T-O%~03 SEMICONDS • For high-speed switching applications • Common cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8-mm tape
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23b320
T-03-09
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Untitled
Abstract: No abstract text available
Text: SIEM ENS • û2 3S bDS 000^434 'îflO Silicon Variable Capacitance Diode BB 515 • For UHF and VHF TV/VTR tuners • Large capacitance ratio • Low series resistance Type BB 515 Ordering Code tape and reel 1 2 Q62702-B607 C A Pin Configuration Marking
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Q62702-B607
OD-123
EHD07042
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620 tg diode
Abstract: No abstract text available
Text: Silicon Variable Capacitance Diode BB 620 • For Hyperband TV/VTR tuners, Bd I Type Marking B B red S 6 2 0 Ordering Code tape and reel Pin Configuration Package1) 3 2 o - « - o Q 6 2 7 0 2 -B 4 0 3 S O D - 1 2 3 EHM0001 Maximum Ratings
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EHM0001
EHD07049
620 tg diode
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620 tg diode
Abstract: 30V30
Text: Silicon Tuning Diode BB 620 • For Hyperband TV/VTR tuners. Bd I Type BB620 Ordering code Q 6 2 7 0 2 -B 4 0 3 Marking red/S M axim um ratings Vr h To, ^»tg S iem ens 30 20 -55.+125 -55.+150 V mA °C °C o o Reverse voltage Forward current Operating temperature range
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BB620
620 tg diode
30V30
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Untitled
Abstract: No abstract text available
Text: bbS3T31 □ 0257clfl 247 H A P X N AUER PHILIPS/DISCRETE PMBD 2837 PMBD 2838 L7E D J V SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD2837 and 2838 consist of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high speed switching.
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bbS3T31
0257cf
BD2837
PMBD2837
BD2838
PMBD2838
bbS3T31
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k 2837
Abstract: C 2837 PMBD2837 PMBD2838 2838 ir PMBD
Text: • bbSB^ai 00257=10 247 ■ APX N AUER PHILIPS/DISCRETE PMBD 2837 PMBD 2838 b?E D SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD 2837 and 283 8 consist of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high speed switching.
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PMBD2837
pmbd2838
k 2837
C 2837
PMBD2838
2838 ir
PMBD
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TP10N
Abstract: No abstract text available
Text: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and
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PMBD7000
Abstract: diode p5C
Text: •I bbsa^ai ÜDHSÔD? DAT ■ APX N AMER PHILIPS/DISCRETE PMBD 7000 b?E D _ SILICO N PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD7000 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high speed switching.
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PMBD7000
PMBD7000:
bbS3T31
diode p5C
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