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    DIODE MARKING CODE FJ Search Results

    DIODE MARKING CODE FJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE FJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode marking code fj

    Abstract: marking 724 diode SOT23 MARKING code fj SOT23 code fj SB491D marking code TS
    Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter


    Original     		PDF SB491D OT-23 diode marking code fj marking 724 diode SOT23 MARKING code fj SOT23 code fj SB491D marking code TS

    marking 724 diode

    Abstract: SOT23 code fj marking code fj sot-23 marking code IR
    Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter


    Original     		PDF SB491D OT-23 marking 724 diode SOT23 code fj marking code fj sot-23 marking code IR

    trace code TO-220

    Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
    Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram


    Original     		PDF FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D

    j5304d

    Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application


    Original     		PDF FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o

    Untitled

    Abstract: No abstract text available
    Text: FJH1101 Ultra Low Leakage Diode General Description An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere. This product is light sensitive, any damage to the body coating will affect the reverse leakage when exposed to light.


    Original     		PDF FJH1101 DO-35

    fairchild h11

    Abstract: FJH1101 alpha PRODUCT DATE CODE IDENTIFICATION
    Text: FJH1101 Ultra Low Leakage Diode General Description An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere. This product is light sensitive, any damage to the body coating will affect the reverse leakage when exposed to light.


    Original     		PDF FJH1101 DO-35 fairchild h11 FJH1101 alpha PRODUCT DATE CODE IDENTIFICATION

    RFID 5.8Ghz

    Abstract: phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060
    Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications


    Original     		PDF HSMS-286x HSMS286x OT-23/SOT143 th-323 SC70-3 OT-363 SC70-6 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG RFID 5.8Ghz phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060

    smd diode code WP

    Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
    Text: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-A1190 OD-323 50/60Hz, smd diode code WP diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode

    diode rectifier siemens

    Abstract: No abstract text available
    Text: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type


    OCR Scan     		PDF 2-02W 2-02W Q62702-A1028 SCD-80 diode rectifier siemens

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage


    OCR Scan     		PDF Q62702-A3466 OT-343 EHN00019 100ns,

    Marking A7S sot

    Abstract: No abstract text available
    Text: SIEMENS BAV 99S Silicon Sw itching Diode Array • For high-speed switching applications • Connected in series • Internal galvanic isolated Diodes in one package Type Marking O rdering Code Pin C onfiguration BAV 99S A7s 1/4 = A1 Q62702-A1277 Package


    OCR Scan     		PDF Q62702-A1277 OT-363 EHN00019 100ns, Marking A7S sot

    R8915

    Abstract: ERC25 marking AJ 7
    Text: ERC25 i .2A I W I W i i : Outline Drawings FAST RECOVERY DIODE : Features IR High voltage by mesa design. * Marking tf High reliability * 7 - n - r :W Color code : Green : Applications Abridged type name *V HiBE? 5* Voltage class High speed sw itching. - V -r-9


    OCR Scan     		PDF ERC25 100C3C3CDO R8915 marking AJ 7

    TFK 715

    Abstract: BAW56S
    Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363


    OCR Scan     		PDF Q62702-A1253 OT-363 100ns, TFK 715 BAW56S

    151S5

    Abstract: No abstract text available
    Text: ERC05 1 .2A - * ’ Outline Drawings _ GENERAL USE R EC TIFIER DIODE ! Features • If— Hi gh surge current • Sift fl 14 • S tf I Marking High reliability : Applications A 7 - 3 - K : fi Color code : Orange • V X S tifc General purpose rectifier applications


    OCR Scan     		PDF ERC05 l95t/R89 151S5

    Untitled

    Abstract: No abstract text available
    Text: ERB35 ia I Outline Drawings FAST RECOVERY DIODE : Features • iê/K : Marking Soft recovery, low noise • A f t f f i't i High reliability * —3 — K $ Cole r code : Applications Abridged type n am e^' DP f t -> Silver s. 1 ^ O ÍV - Í- 'T - Í ft-


    OCR Scan     		PDF ERB35( I95t/R89)

    F760

    Abstract: GGT DIODE ERB32 F553 H150 T151 T810 T930 J3E diode
    Text: ERB32 i .2A • * » ■ * » : Outline Drawings FAST RECOVERY DIODE : Features Super high speed switching H S tF I Marking • te V F A 5- 3 - V ; fi Low V F Color code : Orange • «fifS-ft Abridged type name ŒŒ? « Voltoge class D yh fc Lot No. High reliability


    OCR Scan     		PDF ERB32 TKESTS30 aTi30S3 I95t/R89) F760 GGT DIODE F553 H150 T151 T810 T930 J3E diode

    C 5388

    Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
    Text: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class


    OCR Scan     		PDF ERB38 30S3-^ eaTa30 I95t/R89) Shl50 C 5388 A-128 T151 T460 T760 T810 T930 pic t460

    marking 2U 77 diode

    Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
    Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1


    OCR Scan     		PDF ERC84-009 marking 2U 77 diode marking DIODE 2U 04 marking code IAM 12CT diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U

    Untitled

    Abstract: No abstract text available
    Text: ERB06HA : Outline Drawings FAST RECOVERY DIODE Mft-Bk •Features • t ) ? —TV£* |fg?jv : Marking M ost suitable fo r co lo r T .V . dam per • w r t m z V M E . ir 'f a ' * 7- 3- K : ft High voltage by mesa design. Color code : Blue • B it CD High reliability


    OCR Scan     		PDF ERB06HA) E95ft--T I95t/R89)

    h51 diode

    Abstract: No abstract text available
    Text: ERB44 ia  jÈ S S S f t ^ V i—K • W fé '+ fè : Outline Drawings FAST RECOVERY DIODE ■ ¡E H I : Features :7jv : Marking High voltage by mesa design. • ftflM R tt # 7 - 3 - K: m High reliability Color code : Green ■ E J ii : Applications Abridged type name


    OCR Scan     		PDF ERB44( 10msS Tg30S I95t/R89) h51 diode

    a124 es

    Abstract: rkm v
    Text: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class


    OCR Scan     		PDF l95t/RB9 a124 es rkm v

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    smd diode schottky code marking 1A

    Abstract: marking code SMD xf smd marking XF diode MARKING CODE A9
    Text: Schottky Barrier Diode Single Diode mtm D1 FJ10 OUTLINE U n it-m m Package : 1F W eight 0.058g T y p i) / Ccilhode mark 100V 1A Feature (< • /J v g y S M D • S m all S M D • Tj=150°C • T j= 1 5 0 °C • •(SIr= 0 .2 m A • L o w Ir = 0 .2 itiA


    OCR Scan     		PDF D1FJ10 Tj-150 smd diode schottky code marking 1A marking code SMD xf smd marking XF diode MARKING CODE A9

    Untitled

    Abstract: No abstract text available
    Text: y a y h V Schottky Barrier Diode # — K - v fjiia D3S4M 4 0 V OUTLINE DIMENSIONS Case : 1.4 ^ 3 A 25 ±2 m 7 1<? ìt 2S=2 a f 4.4 -o t - • T j 1 5 0 ”C • P rrsm • 1.4 K Axial Diode -É 5 - 1* K U— K o - -W w&m ''C o lor code ffl m •S R B ü


    OCR Scan     		PDF QQQ31Ã