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    DIODE MARKING CODE LAYOUT G SOT23 Search Results

    DIODE MARKING CODE LAYOUT G SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE LAYOUT G SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery


    Original     		DMN3730U AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C


    Original     		DMN2300U AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification


    Original     		BSS138 J-STD-020 MIL-STD-202, AEC-Q101 DS30144 PDF

    E6433

    Abstract: MARKING CODE 213 marking code 62 3 pin diode diode marking code 58
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


    Original     		BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W E6433 MARKING CODE 213 marking code 62 3 pin diode diode marking code 58 PDF

    DMN65D8L-7

    Abstract: No abstract text available
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 PDF

    DMN65D8L-7

    Abstract: dmn65d8l
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 dmn65d8l PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 PDF

    BBY53

    Abstract: marking code 10 sot23 BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-05W SC79 SCD80
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage • Pb-free RoHS compliant package1) • Qualified according AEC Q101


    Original     		BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53 BBY53-05W BBY53 marking code 10 sot23 BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-05W SC79 SCD80 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Features and Benefits Product Summary V BR DSS • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V


    Original     		DMN3730U AEC-Q101 DS35308 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V


    Original     		DMN2300U AEC-Q101 DS35309 PDF

    marking code INFINEON

    Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


    Original     		BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W PDF

    DMN3730U-7

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V


    Original     		DMN3730U AEC-Q101 DS35308 DMN3730U-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V


    Original     		DMN2300U AEC-Q101 DS35309 PDF

    DIODES K29

    Abstract: No abstract text available
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		BSS127 AEC-Q101 DS35476 DIODES K29 PDF

    marking code INFINEON

    Abstract: sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 BAR63-02W BBY51 BBY51-02L BBY51-02W *T4 MARKING SC75
    Text: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BBY51 BBY51-02L BBY51-02W


    Original     		BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W SCD80 marking code INFINEON sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 BAR63-02W BBY51 BBY51-02L BBY51-02W *T4 MARKING SC75 PDF

    marking code 52 diode

    Abstract: No abstract text available
    Text: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W 3 D 2 D 1 1 1 2 2 Type BBY51 BBY51-02L* BBY51-02W BBY51-03W


    Original     		BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W BBY51 BBY51-02L* SCD80 marking code 52 diode PDF

    marking code INFINEON

    Abstract: sod323 diode marking code AC marking code diode 14 BAR63-02W BAR63-03W BBY51 BBY51-02L BBY51-02W BBY51-03W BCW66
    Text: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W ! ,  ,   Type BBY51 BBY51-02L BBY51-02W BBY51-03W Package


    Original     		BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W SCD80 marking code INFINEON sod323 diode marking code AC marking code diode 14 BAR63-02W BAR63-03W BBY51 BBY51-02L BBY51-02W BBY51-03W BCW66 PDF

    BBY53

    Abstract: No abstract text available
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage • Pb-free RoHS compliant package BBY53-02L BBY53-02V BBY53-02W


    Original     		BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53 BBY53-05W PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    DIODE MARKING CODE LAYOUT G SOT23

    Abstract: marking code 10 sot23 BAR63-02V BBY66 BBY66-02V BBY66-05 BBY66-05W BCW66 SC75 SC79
    Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free RoHS compliant package 1)


    Original     		BBY66. BBY66-02V BBY66-05 BBY66-05W OT323 DIODE MARKING CODE LAYOUT G SOT23 marking code 10 sot23 BAR63-02V BBY66 BBY66-02V BBY66-05 BBY66-05W BCW66 SC75 SC79 PDF

    BBY66-05

    Abstract: No abstract text available
    Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-02V BBY66-05


    Original     		BBY66. BBY66-02V BBY66-05 BBY66-05W BBY66-02V OT323 PDF

    Untitled

    Abstract: No abstract text available
    Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free RoHS compliant package 1)


    Original     		BBY66. BBY66-02V BBY66-05 BBY66-05W OT323 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3300U N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 30V 0.15Ω @ VGS = 4.5V 0.2Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.8V 0.3Ω @ VGS = 1.5V SOT23 • • • • • • • • ID TA = +25°C 2A 1.6A 1.4A 1.2A Low On-Resistance Low Gate Threshold Voltage


    Original     		DMN3300U AEC-Q101 DS31181 PDF

    BAS70

    Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s
    Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L


    Original     		BAS70. BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS70 BAS70-02W BAS70-04S marking 77s PDF