zener diode 4.7V
Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Text: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3
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MMSZ52XXBS
200mW,
OD-323
150OC
01-Jun-2002
zener diode 4.7V
marking h2 SOD-323 ZENER
Zener Diode SOD-323 marking code 2b
marking 2h SOD-323
ZENER A25
ZENER DIODE E1
sod323 diode marking code 2E
zener diode 4.7V current rating
diode F4 8a
marking code 8A
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M1MA142WKT1
Abstract: dual reverse diode
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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M1MA141WKT1
M1MA142WKT1
SC-70
70/SOT
M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA142WKT2
M1MA142WKT1
dual reverse diode
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
M1MA142KT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort M1MA141WAT1 M1MA142WAT1 Common Anode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low
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M1MA141/2WAT1
inch/3000
M1MA141/2WAT3
inch/10
M1MA141WAT1
M1MA142WAT1
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DIODE 436
Abstract: 141WK
Text: ON Semiconductort M1MA141WKT1 M1MA142WKT1 Common Cathode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low
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M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA141WKT1
M1MA142WKT1
DIODE 436
141WK
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Untitled
Abstract: No abstract text available
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
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Untitled
Abstract: No abstract text available
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
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DIODE UF marking code
Abstract: j6 diode
Text: M1MA174T1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IF 200 mA IFM surge 500 mA Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C
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M1MA174T1
70/SOT
DIODE UF marking code
j6 diode
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Untitled
Abstract: No abstract text available
Text: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.
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M1FE40
J534-1
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E72873
Abstract: 120-16NO2T VUO120-16NO2T ntc application vuo120-16no2
Text: VUO 120-xxNO2T Three Phase Rectifier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin configuration see outlines. Features:
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120-xxNO2T
1200/1600V
VUO120-12NO2T
VUO120-16NO2T
E72873
120-12NO2T
120-16NO2T
E72873
VUO120-16NO2T
ntc application
vuo120-16no2
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VUB160-16NOXt
Abstract: VUB160-16NOX VUB160-16
Text: VUB160-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 220 A = 1100 A VCE sat = 1.95 V 3~ Rectifier Bridge + Brake Unit Part name VUB160-16NOXT W5 W6 S1 M1/O1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10
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VUB160-16NOXT
M10/O10
60747and
60747and
20111102a
VUB160-16NOXt
VUB160-16NOX
VUB160-16
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VUB120-16NOX
Abstract: No abstract text available
Text: VUB120-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE sat = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name VUB120-16NOX M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10
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VUB120-16NOX
M10/O10
60747and
20111102a
VUB120-16NOX
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Marking H2
Abstract: code M.H diode marking H2 M1MA151 marking M1MA151KT1 M1MA152KT1 SC59 H222 H21 MARKING
Text: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. M1MA151KT1 M1MA152KT1
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M1MA151KT1
M1MA152KT1
SC-59
M1MA151/2KT1
inch/3000
-100mA
M1MA151/2KT3
inch/10
M1MA151KT1
Marking H2
code M.H
diode marking H2
M1MA151 marking
M1MA152KT1
SC59
H222
H21 MARKING
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H122
Abstract: M1MA151 marking marking H1 M1MA151AT1 M1MA152AT1
Text: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use M1MA151AT1 M1MA152AT1 in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.
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M1MA151AT1
M1MA152AT1
SC-59
-100mA
M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
H122
M1MA151 marking
marking H1
M1MA152AT1
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H3 marking
Abstract: M1MA151 marking M1MA151WAT1 M1MA152WAT1 H3 diode 152WA
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low
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M1MA151WAT1
M1MA152WAT1
SC-59
-100mA
M1MA151/2WAT1
inch/3000
M1MA151/2WAT3
inch/10
M1MA151WAT1
H3 marking
M1MA151 marking
M1MA152WAT1
H3 diode
152WA
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h322
Abstract: H3 marking M1MA151 marking M1MA151WAT1 M1MA152WAT1
Text: Common Anode Silicon Dual Switching diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low
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M1MA151WAT1
M1MA152WAT1
SC-59
-100mA
M1MA151/2WAT1
inch/3000
M1MA151/2WAT3
inch/10
M1MA151WAT1
h322
H3 marking
M1MA151 marking
M1MA152WAT1
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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Untitled
Abstract: No abstract text available
Text: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
M1MA141WKT1/D
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M1MA141KT1
Abstract: M1MA141KT1G M1MA142KT1 M1MA142KT1G
Text: M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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M1MA141KT1G,
M1MA142KT1G
SC-70
M1MA141KT1
M1MA142KT1
M1MA141KT1/D
M1MA141KT1
M1MA141KT1G
M1MA142KT1
M1MA142KT1G
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Untitled
Abstract: No abstract text available
Text: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
SC-70
AEC-Q101
SC-70
OT-323)
M1MA141WAT1G
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Untitled
Abstract: No abstract text available
Text: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
M1MA141WAT1/D
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M1MA141WAT1
Abstract: M1MA141WAT1G M1MA142WAT1 M1MA142WAT1G
Text: M1MA141WAT1, M1MA142WAT1 Preferred Device Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1,
M1MA142WAT1
SC-70
M1MA141WAT1
M1MA141WAT1/D
M1MA141WAT1
M1MA141WAT1G
M1MA142WAT1
M1MA142WAT1G
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smd code book z1
Abstract: No abstract text available
Text: Super Fast Recovery Diode mtm OUTLINE Single D iode M1FL40 400V 1.5A ;fr y - F y - ? Cathode m ar Feature • /JvPSMD Unit-mm Weight 0.027g Typ Package : M1F • Small SMD • fîy -fX ' • Low Noise • trr=50ns • trr=50ns [| a 03 1 x U -yb^d^(M )
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OCR Scan
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M1FL40
smd code book z1
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diode SMD MARKING CODE JV
Abstract: smd diode marking code SM smd marking KH
Text: Super Fast Recovery Diode mtm OUTLINE Single D iode M1FL20U Package I M1F 200V 1.1 A -fty -K v -? ÇWi— Cathode mai' Feature • /JvPSMD U n it-m m W eight 0 .0 2 7 g T y p £ |L 6 W • Small SMD • ß y -rx • Low Noise • trr=35ns • trr=35ns
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M1FL20U
20jUm
diode SMD MARKING CODE JV
smd diode marking code SM
smd marking KH
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