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    DIODE MARKING CODE VN G1 Search Results

    DIODE MARKING CODE VN G1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE VN G1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT AD CE FO RM AT NN AV DA VN AN C EI NI N FO RM A ITOI O Product Summary V BR DSS • • • • • • • • • • ID max RDS(ON) max TA = 25°C 0.99Ω @ VGS = 4.5V


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    PDF DMN21D2UFB 760mA 700mA 500mA 350mA DS35564

    Untitled

    Abstract: No abstract text available
    Text: AME, Inc. AME1117 n General Description The AME1117 is a 1A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as while it reaches


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    PDF AME1117 AME1117 1014-DS1117-T

    12V 10A voltage regulators

    Abstract: dcct AME1084DCBT AME1084ACDTZ AME DCDT AME1084 AME1084ACBTZ zener diode 2349 AME1084DCBTZ 12v ballast ic
    Text: AME, Inc. AME1084 n General Description The AME1084 is a 5A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as it reaches the


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    PDF AME1084 AME1084 1012-DS1084-O 12V 10A voltage regulators dcct AME1084DCBT AME1084ACDTZ AME DCDT AME1084ACBTZ zener diode 2349 AME1084DCBTZ 12v ballast ic

    internal diagram of 7447 IC

    Abstract: AME1084DCC 7447 AME1084 AME1084ACBT AME1084BCBT AME1084CCBT AME1084DCBT AME1084DCCT-3Z AME DCDT
    Text: AME, Inc. AME1084 n General Description The AME1084 is a 5A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as it reaches the


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    PDF AME1084 AME1084 1012-DS1084-N internal diagram of 7447 IC AME1084DCC 7447 AME1084ACBT AME1084BCBT AME1084CCBT AME1084DCBT AME1084DCCT-3Z AME DCDT

    amoled

    Abstract: 12V DC to 120V AC inverter COILCRAFT XPL2010 COILCRAFT XPL2010-682 LT3495B XPL2010 LT3582 LT3582-12 LT3582-5 LT3582EUD-5
    Text: LT3582/LT3582-5/LT3582-12 I2C Programmable Boost and Single Inductor Inverting DC/DC Converters with OTP DESCRIPTION FEATURES n n n n n n n n n n Output Voltages: 3.2V to 12.775V and –1.2V to –13.95V LT3582 5V and –5V (LT3582-5) 12V and –12V (LT3582-12)


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    PDF LT3582/LT3582-5/LT3582-12 LT3582) LT3582-5) LT3582-12) 350mA 600mA LT3467/A LT1618 amoled 12V DC to 120V AC inverter COILCRAFT XPL2010 COILCRAFT XPL2010-682 LT3495B XPL2010 LT3582 LT3582-12 LT3582-5 LT3582EUD-5

    two switch coupled inductor buck-boost converter

    Abstract: COILCRAFT XPL2010 XPL2010 COILCRAFT XPL2010-682 12V DC to 120V AC inverter LT3582EUD-5 LT3582 LT3582-12 LT3582-5
    Text: LT3582/LT3582-5/LT3582-12 I2C Programmable Boost and Single Inductor Inverting DC/DC Converters with OTP DESCRIPTION FEATURES n n n n n n n n n n Output Voltages: 3.2V to 12.775V and –1.2V to –13.95V LT3582 5V and –5V (LT3582-5) 12V and –12V (LT3582-12)


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    PDF LT3582/LT3582-5/LT3582-12 LT3582) LT3582-5) LT3582-12) 350mA 600mA LT3467/A LT1618 two switch coupled inductor buck-boost converter COILCRAFT XPL2010 XPL2010 COILCRAFT XPL2010-682 12V DC to 120V AC inverter LT3582EUD-5 LT3582 LT3582-12 LT3582-5

    Untitled

    Abstract: No abstract text available
    Text: LT3582/LT3582-5/LT3582-12 Boost and Single Inductor Inverting DC/DC Converters with Optional I2C Programing and OTP DESCRIPTION FEATURES n n n n n n n n n n Output Voltages: 3.2V to 12.775V and –1.2V to –13.95V LT3582 5V and –5V (LT3582-5) 12V and –12V (LT3582-12)


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    PDF LT3582/LT3582-5/LT3582-12 LT3582) LT3582-5) LT3582-12) 350mA 600mA LT1618 LT1946/LT1946A

    LT3582

    Abstract: IRAMP10 LT3582-5 LT3582-12 LT3582EUD-5 20A buck regulator FERRITE TOROIDAL CORE DATA AMOLED driver 500 watt inverter 6v dc to 220 ac
    Text: LT3582/LT3582-5/LT3582-12 Boost and Single Inductor Inverting DC/DC Converters with Optional I2C Programing and OTP DESCRIPTION FEATURES n n n n n n n n n n Output Voltages: 3.2V to 12.775V and –1.2V to –13.95V LT3582 5V and –5V (LT3582-5) 12V and –12V (LT3582-12)


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    PDF LT3582/LT3582-5/LT3582-12 LT3582) LT3582-5) LT3582-12) 350mA 600mA LT3467/LT3467A LT1618 LT3582 IRAMP10 LT3582-5 LT3582-12 LT3582EUD-5 20A buck regulator FERRITE TOROIDAL CORE DATA AMOLED driver 500 watt inverter 6v dc to 220 ac

    TO-243AA

    Abstract: diode marking CODE VN G1 s4 marking code siemens VN3205N8-G
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    PDF VN3205 MS-001, DSFP-VN3205 B020608 TO-243AA diode marking CODE VN G1 s4 marking code siemens VN3205N8-G

    VN3205N6

    Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination


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    PDF VN3205 MS-001, DSFP-VN3205 A071607 VN3205N6 diode marking CODE VN G1 vn2lw SOT89 MARKING CODE 43 diode marking CODE VN S2

    VN3205

    Abstract: No abstract text available
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


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    PDF VN3205 MS-001, DSFP-VN3205 A072507 VN3205

    DIODE S4 08

    Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with


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    PDF VN3205 MS-001, DSFP-VN3205 A101507 DIODE S4 08 vn3205p-g VN3205N8-G diode sot-89 marking code S1

    connectors

    Abstract: smd marking code bk4 Diodo b4 diodo zener a3 1a60 4p diodo DIODO 55 SMD diodo 4514 smd
    Text: version 110125 Index | Indice Description Descrizione Family Famiglia Page Pagina For electrovalves, EN175301-803 style A, ISO 4400, former DIN 43650-A , 18 mm spacing, 2p+2G, female, with cable Per elettrovalvole, EN175301-803 stile A, ISO 4400, (ex DIN 43650-B),


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    PDF EN175301-803 3650-A) 43650-B) 76A2T connectors smd marking code bk4 Diodo b4 diodo zener a3 1a60 4p diodo DIODO 55 SMD diodo 4514 smd

    b0915

    Abstract: VN3205
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    PDF VN3205 DSFP-VN3205 B091508 b0915

    south bridge SIS 968

    Abstract: S6 marking code onsemi Diode SI3018-F-FS marking code 7N1 Si2457 Si3018 Si2404 Si2415 Si2434 SI2434-D-GT
    Text: Si2457/34/15/04 V.90, V.34, V. 32 B IS , V.22 B IS I SO MO DE M WITH G L O B A L DAA Features  This data sheet applies to Si2457/34/  Integrated DAA 15/04 Revision D Over 6000 V capacitive isolation  Data modem formats Parallel phone detect


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    PDF Si2457/34/15/04 Si2457/34/ 42bis, south bridge SIS 968 S6 marking code onsemi Diode SI3018-F-FS marking code 7N1 Si2457 Si3018 Si2404 Si2415 Si2434 SI2434-D-GT

    GPU reflow profile

    Abstract: ISL6263CHRZ power mosfet ic for audio amplifier thermistor ntc 10k Automatic Voltage Regulator block diagram intersil standard part marking ISL6263 ISL6263C ISL6263CHRZ-T TB347
    Text: ISL6263C Data Sheet July 31, 2008 5-Bit VID Single-Phase Voltage Regulator with Current Monitor for GPU Core Power The ISL6263C IC is a Single-Phase Synchronous-Buck PWM voltage regulator for GPU core power application. It features Intersil’s Robust Ripple Regulator R3


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    PDF ISL6263C ISL6263C 5m-1994. FN6745 GPU reflow profile ISL6263CHRZ power mosfet ic for audio amplifier thermistor ntc 10k Automatic Voltage Regulator block diagram intersil standard part marking ISL6263 ISL6263CHRZ-T TB347

    Untitled

    Abstract: No abstract text available
    Text: ISL6263C Data Sheet July 8, 2010 5-Bit VID Single-Phase Voltage Regulator with Current Monitor for GPU Core Power The ISL6263C IC is a Single-Phase Synchronous-Buck PWM voltage regulator for GPU core power application. It features Intersil’s Robust Ripple Regulator R3


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    PDF ISL6263C ISL6263C 5m-1994. FN6745

    GPU reflow profile

    Abstract: ISL6263C ISL6263CHRZ-T TB347 TB363 TB379 ISL6263 ISL6263CHRZ 5V rectifier ic
    Text: ISL6263C Data Sheet July 8, 2010 5-Bit VID Single-Phase Voltage Regulator with Current Monitor for GPU Core Power The ISL6263C IC is a Single-Phase Synchronous-Buck PWM voltage regulator for GPU core power application. It features Intersil’s Robust Ripple Regulator R3


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    PDF ISL6263C ISL6263C 5m-1994. FN6745 GPU reflow profile ISL6263CHRZ-T TB347 TB363 TB379 ISL6263 ISL6263CHRZ 5V rectifier ic

    ilp in i7 processor

    Abstract: TA 2025 B S6 marking code onsemi Diode diode MARKING A1 v34 marking code 7N1 multimedia isomodem differential electret condenser microphone preamp Si3000 V32B c3 two wire electret microphone condenser
    Text: Si2494/39 V. 92 A N D V.34 ISO MODEM W I T H G LOBAL DAA Features             EEPROM interface Commercial or industrial temperature range DTMF detection/generation Si3000 Voice Codec Interface Hardware support for mic,


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    PDF Si2494/39 Si3000 TBR-38, TIA/EIA4790 GPIO16, GPIO17, ilp in i7 processor TA 2025 B S6 marking code onsemi Diode diode MARKING A1 v34 marking code 7N1 multimedia isomodem differential electret condenser microphone preamp V32B c3 two wire electret microphone condenser

    Si2493

    Abstract: V32B c3 BLM21AG601SN1 CMPD2004S MMBTA42 MMBTA92 Si3018 Si3018-F-FS ESC schematic CV92
    Text: Si2493 V. 92 I SO MODEM WITH G L O B A L DAA Features   This data sheet applies to Si2493 Revision D  Data modem formats Over 6000 V capacitive isolation Parallel phone detect Globally-compliant line interface Overcurrent detection


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    PDF Si2493 42bis, Si2493 V32B c3 BLM21AG601SN1 CMPD2004S MMBTA42 MMBTA92 Si3018 Si3018-F-FS ESC schematic CV92

    Untitled

    Abstract: No abstract text available
    Text: International PDS,66! 3X3R Rectifier IR F B F 2 0 S / L p r e l im in a r y HEXFET Power MOSFET • • • • • • • Surface Mount IRFBF20S Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature


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    PDF IRFBF20S) IRFBF20L)

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier_ PD-&1015 IR F B G 30S/L p r e l im in a r y HEXFET Power MOSFET • • • • • • • Surface Mount IRFBC30S Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature


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    PDF IRFBC30S) IRFBC30L)

    Untitled

    Abstract: No abstract text available
    Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


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    PDF FDC6306P

    Untitled

    Abstract: No abstract text available
    Text: International M R Rectifier PD -9.1478 IRF4905S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


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    PDF IRF4905S