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    DIODE MARKING CODE YF 30 Search Results

    DIODE MARKING CODE YF 30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE YF 30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode marking code YF

    Abstract: diode marking YF diode 30 YF marking code YF diode marking YF marking code 024 sod Diode yf rectifying a sine wave marking bp 30 yf
    Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode


    Original     		PDF SD0103WS OD-323 OD-323 diode marking code YF diode marking YF diode 30 YF marking code YF diode marking YF marking code 024 sod Diode yf rectifying a sine wave marking bp 30 yf

    diode marking code YF

    Abstract: diode 30 YF diode marking YF marking code YF diode marking YF diode marking code YF 30
    Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode


    Original     		PDF SD0103WS OD-323 OD-323 diode marking code YF diode 30 YF diode marking YF marking code YF diode marking YF diode marking code YF 30

    TPC6107

    Abstract: No abstract text available
    Text: TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIV TPC6107 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • • Low drain-source ON resistance: R DS (ON) = 40 mΩ (typ.)


    Original     		PDF TPC6107 TPC6107

    tpc8020

    Abstract: TPC8020-H
    Text: TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High-Speed U-MOSIII TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package


    Original     		PDF TPC8020-H tpc8020 TPC8020-H

    TPCP8101

    Abstract: No abstract text available
    Text: TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOS III TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A Small footprint due to small and thin package • • Low drain-source ON-resistance: R DS (ON) = 24 mΩ (typ.)


    Original     		PDF TPCP8101 TPCP8101

    TPC8016-H

    Abstract: No abstract text available
    Text: TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High speed U-MOS III TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package


    Original     		PDF TPC8016-H TPC8016-H

    k3934

    Abstract: 2SK3934 transistor k3934 2SK3934 equivalent 2SK3934(Q)
    Text: 2SK3934 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3934 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.)


    Original     		PDF 2SK3934 k3934 2SK3934 transistor k3934 2SK3934 equivalent 2SK3934(Q)

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)


    Original     		PDF 2SK3868 k3868 2SK3868 transistor Toshiba K3868

    TPCS8213

    Abstract: S8213
    Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • • Low drain-source ON-resistance: R DS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs | = 13 S (typ.)


    Original     		PDF TPCS8213 TPCS8213 S8213

    Diode SMA marking code ye

    Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
    Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)


    Original     		PDF TV04A5V0-HF TV04A441-HF SMA/DO-214AC QW-JTV01 Diode SMA marking code ye smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL

    YG MARKING CODE

    Abstract: BZX84C2V4 marking Z2 28 sot23 YG MARKING CODE SOT23 zener diode zg 36 diode marking code YF component marking Y1 sot23 MARKING CODE zh sot23
    Text: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • • • • • • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


    Original     		PDF BZX84C2V4 BZX84C51 350mW AEC-Q101 J-STD-020 MIL-STD-202, DS18001 YG MARKING CODE marking Z2 28 sot23 YG MARKING CODE SOT23 zener diode zg 36 diode marking code YF component marking Y1 sot23 MARKING CODE zh sot23

    International Semiconductor,Inc

    Abstract: se b2 sae j1850 pwm 68HC05 68HC05V12 J1850 M68HC05 MC68HC05V12 The scheme of HF power amplifier FET Freescale Se 211se
    Text: Freescale Semiconductor, Inc. DU LE SE MIC ON General Release Specification CSIC System Design Group Austin, Texas AR CH IVE DB YF RE ES CA R E Q U I R E D December 10, 1996 For More Information On This Product, Go to: www.freescale.com N O N - D I S C L O S U R E


    Original     		PDF 68HC05V12 HC05V12GRS/D International Semiconductor,Inc se b2 sae j1850 pwm 68HC05 68HC05V12 J1850 M68HC05 MC68HC05V12 The scheme of HF power amplifier FET Freescale Se 211se

    Untitled

    Abstract: No abstract text available
    Text: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • • • • • • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


    Original     		PDF BZX84C2V4 BZX84C51 350mW AEC-Q101 J-STD-020 MIL-STD-202, DS18001

    Untitled

    Abstract: No abstract text available
    Text: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction   350mW Power Dissipation   Zener Voltages from 2.4V - 51V Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0


    Original     		PDF BZX84C2V4 BZX84C51 350mW J-STD-020 MIL-STD-202, AEC-Q101 DS18001

    BR 8014

    Abstract: TPCA8014-H diode marking code YF
    Text: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TENTATIVE TPCA8014-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching Small gate charge: Qsw = 7.4 nC (typ.)


    Original     		PDF TPCA8014-H BR 8014 TPCA8014-H diode marking code YF

    cn/A/U 237 BG

    Abstract: No abstract text available
    Text: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV


    Original     		PDF DO-214AC 5/50ns cn/A/U 237 BG

    HALL EFFECT 21E

    Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
    Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		PDF 26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG

    cn/A/U 237 BG

    Abstract: No abstract text available
    Text: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV


    Original     		PDF DO-214AC E333727 5/50ns cn/A/U 237 BG

    cn/A/U 237 BG

    Abstract: No abstract text available
    Text: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV


    Original     		PDF DO-214AC E333727 5/50ns cn/A/U 237 BG

    zener diode Marking code v3 sod-123

    Abstract: BZT52B68-V-G BZT52-V-G
    Text: BZT52-V-G-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener


    Original     		PDF BZT52-V-G-Series OT-23 BZX84 AEC-Q101 2002/95/EC 2002/96/EC OD-123 18-Jul-08 zener diode Marking code v3 sod-123 BZT52B68-V-G BZT52-V-G

    Untitled

    Abstract: No abstract text available
    Text: RZQ050P01 Pch -12V -5A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 26mW ID -5A PD 1.25W lFeatures (6) (5) TSMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT6).


    Original     		PDF RZQ050P01 R1120A

    Untitled

    Abstract: No abstract text available
    Text: RZQ050P01 Pch -12V -5A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 26mW ID -5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT6).


    Original     		PDF RZQ050P01 R1120A

    MAZD024

    Abstract: MAZD027 MAZD030 MAZD033 MAZD051 MAZD056 MAZD062 zener diode marking ES code MAZD390
    Text: Sheet No. 1/3 APPROVED DESIGNED » » « » / P r o d u c t Specification pp fi =S/Type Number MA Z D □ □ □ 1 2)3) *4 flSJ/Type "J jL-jr— ffliÉ/Appl icat ion SifliE • SWaii • liia/Structure i / ’J 3 « ■ » / O u t line S S S M i ■? —


    OCR Scan     		PDF MAZD330 MAZD360 MAZD390 MAZD024 MAZD027 MAZD030 MAZD033 MAZD051 MAZD056 MAZD062 zener diode marking ES code

    BSP320

    Abstract: No abstract text available
    Text: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF OT-223 Q67000-S4001 BSP320