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    DIODE MARKING DL Search Results

    DIODE MARKING DL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING DL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips


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    DLA10IM800UC O-252 60747and 20130121b PDF

    Untitled

    Abstract: No abstract text available
    Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips


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    DLA10IM800UC O-252 60747and 20130121b PDF

    Untitled

    Abstract: No abstract text available
    Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current


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    O-252 60747and 20070320a PDF

    Untitled

    Abstract: No abstract text available
    Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    O-252 60747and 20070320a PDF

    marking DLA

    Abstract: DIODE MARKING 534 Marking A2s marking 37 IM
    Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current


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    O-252 80ced 60747and marking DLA DIODE MARKING 534 Marking A2s marking 37 IM PDF

    DIODE C04 06

    Abstract: ERC04
    Text: ERC04 1.2A (200V to 1000V / 1.2A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 1.0 7.5 28 MIN. 28 MIN. Features Marking Wide voltage class High reliability Color code : Orange C04 Abridged type name Applications 02 Voltage class General purpose rectifier applications


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    ERC04 let-04 s600n1000 ERC04 DIODE C04 06 PDF

    DLA60I1200HA

    Abstract: No abstract text available
    Text: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number DLA 60 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current


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    O-247 60747and DLA60I1200HA PDF

    DLA60I1200HA

    Abstract: No abstract text available
    Text: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase


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    O-247 f0090720 60747and DLA60I1200HA PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery


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    SML05SC06D3A SML05SC06D3B SML05SC06D3B PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery


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    SML05SC06D3A SML05SC06D3B SML05SC06D3B PDF

    Untitled

    Abstract: No abstract text available
    Text: DLA 20 IM 800 PC advanced V RRM = I FAV = VF = Standard Rectifier Single Diode 800 V 20 A 1.12 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour


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    O-263 DLA20IM800PC O-263AB 60747and PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code


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    114-099R Q62702-A1006 OT-143 EHA07C E35bG5 D15G3Ã DlED30* PDF

    MA411

    Abstract: YG811S09R
    Text: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na


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    YG811S09R H04-004-07 MA411 YG811S09R PDF

    Fuji Electric SM

    Abstract: No abstract text available
    Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


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    YG811S06R Fuji Electric SM PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 1 ho 3 Rd-o o-^ EHA07002 Maximum Ratings Parameter Symbol


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    Q68000-A625 OT-23 EHA07002 23StiD5 01EE4c flE35bQ5 01EE500 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon PIN Diode BA 885 • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 M Hz. 2 GHz • Especially useful as antenna switch in TV-sat tuners ' Type Marking Ordering Code tape and reel BA 885


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    Q62702-A608 OT-23 EHA07002 z/100 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diode BAR 99 • For high-speed switching Type Marking Ordering Code tape and reel BAR 99 JGs Q62702-A388 Pin Configuration Package1) SOT-23 o- » - o 3 1 EIUOOOOJ Maximum Ratings Parameter Symbol Values Unit Reverse voltage


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    Q62702-A388 OT-23 0B35bOS B35b05 535b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Variable Capacitance Diode BB640 • For Hyperband TV/VTR tuners, Bd I 1 Type BB640 Pin Configuration Marking Ordering Code tape and reel 1 2 Q62702-B589 C A red S . Package SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage


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    BB640 Q62702-B589 OD-323 EHD07045 PDF

    marking 513 SOD-323

    Abstract: No abstract text available
    Text: SIEMENS BB 545 Silicon Tuning Diode Preliminary data • For tuning UHF and VHF TV Tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 545 white U Q62702-B583 1 =K SOD-323 2=A Maximum Ratings Symbol


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    Q62702-B583 OD-323 40mmm 53SbD5 CT2/CT25 fi235b05 marking 513 SOD-323 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings


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    OD-323 a235fc DlHD17fl Q15Q1Ã PDF

    B6U 80/100

    Abstract: MARK UU1 ERC35 Marking code jSs marking code aj
    Text: ERC35 2 .5A g ± 'J : Outline Drawings FAST RECOVERY DIODE * Features ‘ Marking S oft recovery, low noise A ? - 3 - V :» H igh reliability Color code : Silver Abridged type name : Applications %E9 5* AV-K-?-? Voltage class H igh speed sw itch in g . a -j Uto


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    ERC35 B6U 80/100 MARK UU1 Marking code jSs marking code aj PDF

    t930

    Abstract: ERA38 T151 T760
    Text: ERA38 o .5A K Ü S E S k • * » ■ * » : Outline Drawings FAST RECOVERY DIODE 3.0 : Features ■15/jv I Marking Super high speed switching • f f i 'W , 5mmki vT g mmA-siffi Ultra small package. * 7 - □ —K : È Color code : White Possible for 5mm pitch automatic insertion


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    ERA38 I95t/R89) t930 T151 T760 PDF

    a124 es

    Abstract: rkm v
    Text: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class


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    l95t/RB9 a124 es rkm v PDF

    yg801c

    Abstract: No abstract text available
    Text: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na


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    YG801C06R yg801c PDF