Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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DIODE MARKING 534
Abstract: DSA 010
Text: DSA 15 IM 200 UC tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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O-252
30TYP
60747and
DIODE MARKING 534
DSA 010
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BAT54W
Abstract: No abstract text available
Text: RECTRON BAT54W SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 SURFACE MOUNT SCHOTTKY BARRIER DIODE FEATURES * Low forward voltage drop * Fast switching * Uitra - small surface mount package * PN Junction guard ring for transient and ESD protection Marking: KL5
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BAT54W
OT-323
OT-323
MIL-STD-202E
BAT54W
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BAT54CW
Abstract: No abstract text available
Text: RECTRON BAT54CW SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 SURFACE MOUNT SCHOTTKY BARRIER DIODE FEATURES * Low forward voltage drop * Fast switching * Uitra - small surface mount package * PN Junction guard ring for transient and ESD protection Marking: KL7
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BAT54CW
OT-323
OT-323
MIL-STD-202E
BAT54CW
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Untitled
Abstract: No abstract text available
Text: 1N4148 / 1N4448 FAST SWITCHING DIODE Features Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction T Mechanical Data D Case: D O -35 Leads: Solderable per M IL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number
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OCR Scan
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1N4148
1N4448
IL-STD-202,
DO-35
1N4148
100mA
DS12019
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PDF
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marking CODE S2
Abstract: No abstract text available
Text: 1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage
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1N6263WS
OD-323
OD-323
marking CODE S2
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LL4151
Abstract: No abstract text available
Text: LL4151 SURFACE MOUNT FAST SWITCHING DIODE Features • · · Fast Switching High Reliability High Conductance C B A Mechanical Data · · · · · Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202, Method 208 Marking: Cathode Band Only Polarity: Cathode Band
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LL4151
MIL-STD-202,
DS30070
LL4151
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1N4151
Abstract: LL4151
Text: 1N4151 FAST SWITCHING DIODE Features • · · · Fast Switching High Reliability High Conductance Surface Mount Version Available LL4151 B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number
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1N4151
LL4151)
DO-35
DO-35,
MIL-STD-202,
DS12014
1N4151
LL4151
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED diode k77 K77 diode
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750
BAT750-GS18
BAT750-GS08
08-Apr-05
VISHAY diode MARKING ED
VISHAY MARKING ED
diode k77
K77 diode
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marking P2 sot-23
Abstract: marking wa sot-23
Text: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1201
OT-23
MMBD1204
MMBD1203
MMBD1205
marking P2 sot-23
marking wa sot-23
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transistor 1201 1203 1205
Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
MMBD1201
MMBD1204A
MMBD1203
MMBD1205A
transistor 1201 1203 1205
wA MARKING SOT-23 SERIES DIODE
marking P2 sot-23
fairchild s sot-23 Device Marking
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irlru9343
Abstract: IRLR9343 55v audio amplifier IRLU9343 IRLU9343-701 marking code 19B
Text: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency
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IRLR9343
IRLU9343
IRLU9343-701
AN-994
irlru9343
IRLR9343
55v audio amplifier
IRLU9343
IRLU9343-701
marking code 19B
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IRLU4343-701
Abstract: IRLR4343 IRLU4343
Text: PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency
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IRLR4343
IRLU4343
IRLU4343-701
AN-994
IRLU4343-701
IRLR4343
IRLU4343
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97001A
Abstract: AN1001 AN-994
Text: PD - 97001A PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits
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7001A
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
AN1001)
O-220AB
O-262
97001A
AN1001
AN-994
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IRLIB4343
Abstract: No abstract text available
Text: PD - 95857A DIGITAL AUDIO MOSFET IRLIB4343 Features l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI
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5857A
IRLIB4343
O-220
IRFI840G
EEK24
IRLIB4343
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55v audio amplifier
Abstract: IRLIB9343 IRFI840G
Text: PD - 95852 DIGITAL AUDIO MOSFET IRLIB9343 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI
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IRLIB9343
O-220
55v audio amplifier
IRLIB9343
IRFI840G
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KGT15N120KDA
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KGT15N120KDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.
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KGT15N120KDA
KGT15N120KDA
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KGT15N120NDH
Abstract: 600v
Text: SEMICONDUCTOR TECHNICAL DATA KGT15N120NDH General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH induction heating , microwave oven, etc. FEATURES ・High speed switching
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KGT15N120NDH
KGT15N120NDH
600v
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kgt25n120
Abstract: KGT25N120NDH
Text: SEMICONDUCTOR KGT25N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH induction heating , microwave oven, etc. FEATURES ・High speed switching
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KGT25N120NDH
kgt25n120
KGT25N120NDH
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Untitled
Abstract: No abstract text available
Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM60N900
ITO-220
O-251
O-252
TSM60N900CI
50pcs
TSM60N900CH
75pcs
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IRF6775MPbF
Abstract: No abstract text available
Text: IRF6775MTRPbF DIGITAL AUDIO MOSFET Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
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IRF6775MTRPbF
IRF6775MPbF
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AN-994
Abstract: No abstract text available
Text: PD - 97231A IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7231A
IRFS4228PbF
IRFSL4228PbF
AN-994.
AN-994
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N-Channel
Abstract: No abstract text available
Text: TSM042N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. 2. Source 7. 3. Source 6. 4. Gate 5. Key Parameter Performance Drain Drain Drain Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 4.2 VGS = 4.5V 6 Qg 24 nC Block Diagram Ordering Information
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TSM042N03CS
TSM042N03CS
900ppm
1500ppm
1000ppm
N-Channel
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AME41-4096
Abstract: AME41CEAS AME41CEAT AME41CEET AME41FEET AME41FEHA
Text: Analog Microelectronics, Inc. Micropower Voltage Reference Diode AME41-4096 n General Description n Key Features The AME41-4096 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to
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AME41-4096
AME41-4096
OT-23.
OT-23,
2003-DS41-4096-D
AME41CEAS
AME41CEAT
AME41CEET
AME41FEET
AME41FEHA
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