Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE
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LBAV99LT1G
LBAV99LT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1 • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1 A7 3000 Tape & Reel 1 1 ANODE 2 2 CATHODE 3 CAHODE/ANODE LBAV99LT1G A7 Pb-Free 3000 Tape & Reel
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LBAV99LT1
LBAV99LT1G
OT-23
LBAV99LT1-3/3
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MARKING JS sot-23
Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
MARKING JS sot-23
BAS19
BAS19LT1
BAS19LT3
BAS20
BAS20LT1
BAS21
BAS21DW5T1
BAS21LT1
BAS21LT1G
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diode MARKING CODE jx
Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
diode MARKING CODE jx
sot23 marking JR
marking mh sot-23
BAS21LT1G
sot-23 MARKING CODE JS
88a diode
SOT-23 code marking mf
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Js MARKING CODE SOT23
Abstract: No abstract text available
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
Js MARKING CODE SOT23
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Untitled
Abstract: No abstract text available
Text: BB 640 Silicon Variable Capacitance Diode 2 • For Hyperband TV / VTR tuners, Bd I 1 VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 640 red S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage R ≥ 5kΩ
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VPS05176
EHA07001
OD-323
Oct-01-1999
EHD07045
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da221k
Abstract: DA228K DA228U DA204K DA204U DA221 SC-75A UMR12N marking R12 sot-363
Text: DA221 / DA204U / DA204K / DA228U / DA228K / UMR12N Diodes Switching diode DA221 / DA204U / DA204 DA228U / DA228K / UMR12N !External dimensions Units : mm DA221 DA204U / DA228U 1.6±0.2 1.0±0.1 0~0.1 0.15±0.05 0.2 0.7±0.1 0∼0.1 Marking 0.15±0.05 +0.1
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DA221
DA204U
DA204K
DA228U
DA228K
UMR12N
DA204
da221k
SC-75A
UMR12N
marking R12 sot-363
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marking R12 sot
Abstract: R12 SOT323 UMR12N DA228K DA228U DA204K DA204U DA221 SC-75A marking R12 sot-363
Text: DA221 / DA204U / DA204K / DA228U / DA228K / UMR12N Diodes Switching diode DA221 / DA204U / DA204K New DA228U / DA228K / UMR12N zExternal dimensions Units : mm DA221 DA204U / DA228U 1.6±0.2 1.0±0.1 0~0.1 0.15±0.05 0∼0.1 Marking 0.15±0.05 +0.1 0.3 −0
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DA221
DA204U
DA204K
DA228U
DA228K
UMR12N
DA204K
marking R12 sot
R12 SOT323
UMR12N
SC-75A
marking R12 sot-363
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1N4148 75V 150mA Diodes
Abstract: 1N4148 75v 150mA diode 1n4148 1N4148 75V 150mA 500mW 1N4148 diode data sheet 1N4148.1N4448 1N4448
Text: 1N4148 & 1N4448 Fast Switching Diode Features: D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO−35 D Leads: Solderable per MIL−STD−202, Method 208 D Polarity: Cathode Band D Marking: Type Number
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1N4148
1N4448
DO-35
MIL-STD-202,
100mA
1N4148 75V 150mA Diodes
1N4148 75v 150mA diode
1n4148
1N4148 75V 150mA 500mW
1N4148 diode data sheet
1N4148.1N4448
1N4448
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Untitled
Abstract: No abstract text available
Text: BAT30F4 Small signal Schottky diodes Datasheet − production data Features • Very low conduction losses • Negligible switching losses • 0201 package • Low capacitance diode Description 0201 package Figure 1. Pin configuration and marking The BAT30 series uses 30 V Schottky barrier
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BAT30F4
BAT30
DocID025
DocID025780
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Untitled
Abstract: No abstract text available
Text: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56WT1
SC-70
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Untitled
Abstract: No abstract text available
Text: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56WT1
SC-70
BAW56WT1/D
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GP 018 DIODE
Abstract: ba capacitance diode BA 582 marking Ja diode Q62702-A829
Text: Silicon RF Switching Diode ● BA 582 For low-loss VHF band switching in TV/VTR tuners Type Marking Ordering Code Pin Configuration Package1 BA 582 blue S Q62702-A829 SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 35 V Forward current, TA ≤ 60 ˚C
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Q62702-A829
OD-123
GP 018 DIODE
ba capacitance diode
BA 582
marking Ja diode
Q62702-A829
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Untitled
Abstract: No abstract text available
Text: MC74VHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A High Speed: tPD = 20 ns (Typ) at VCC = 5.0 V 5 5 1 Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C V9 M G Diode Protection Provided on Inputs and Outputs
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MC74VHC1G66
MC74VHC4066
MC14066.
MC74VHC1G66/D
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NXP SMD ZENER DIODE MARKING CODE
Abstract: 771-BZX100A115 Zener diode smd marking codes sod323
Text: BZX100A Single Zener diode Rev. 01 — 30 May 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diode in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power dissipation: ≤ 60 W
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BZX100A
OD323F
SC-90)
AEC-Q101
BZX100A
771-BZX100A115
NXP SMD ZENER DIODE MARKING CODE
Zener diode smd marking codes
sod323
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NXP SMD ZENER DIODE MARKING CODE
Abstract: Zener diode smd marking codes 1.2 data sheet zener diode mv 12 BZX100A Zener diode smd marking
Text: BZX100A Single Zener diode Rev. 01 — 30 May 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diode in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power dissipation: ≤ 60 W
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BZX100A
OD323F
SC-90)
AEC-Q101
BZX100A
NXP SMD ZENER DIODE MARKING CODE
Zener diode smd marking codes 1.2
data sheet zener diode mv 12
Zener diode smd marking
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ss129
Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
Text: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3
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Q62702-S568
E6327:
Q67000-S243
E6433:
OT-23
ss129
SS100 TRANSISTOR DATASHEET
ss110 TRANSISTOR
ss100 transistor
SS125
q62702-s566
ss110 to-92
ss89 to-92
SS100 TO92
TRANSISTOR ss101
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Untitled
Abstract: No abstract text available
Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive
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IRGS4620DPbF
IRGB4620DPbF
IRGP4620D
IRGP4620DPbF
O-247AC
O-220AC
IRGP4620D-EPbF
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives
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IRGS4630DPbF
IRGB4630DPbF
IRGP4630D
IRGP4630DPbF
O-247AC
IRGP4630D-EPbF
O-247AD
O-220AC
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Untitled
Abstract: No abstract text available
Text: MMBD1009 MMBD1011 Surface Mount Switching Diode P b Lead Pb -Free SWITCHING DIODE 100m AMPERES 75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr≤4ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions
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MMBD1009
MMBD1011
OT-23
OT-23
22-Sep-05
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DIODE marking ED
Abstract: c3 marking ED marking code diode
Text: CM1244 4-Channel ESD Array in CSP Features • Four Channels of ESD Protection • ±15 kV ESD Protection on Each Channel IEC 61000−4−2 Level 4, Contact Discharge http://onsemi.com • ±30 kV ESD Protection on Each Channel (HBM) • Chip Scale Package Features Extremely Low Lead Inductance
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CM1244
567AX
CM1244/D
DIODE marking ED
c3 marking
ED marking code diode
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Untitled
Abstract: No abstract text available
Text: CM1244 4-Channel ESD Array in CSP Features • Four Channels of ESD Protection • ±15 kV ESD Protection on Each Channel IEC 61000−4−2 Level 4, Contact Discharge http://onsemi.com • ±30 kV ESD Protection on Each Channel (HBM) • Chip Scale Package Features Extremely Low Lead Inductance
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CM1244
567AX
CM1244/D
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Module OUTLINE S30VTA Unit : mm Weight : 30g typ. Package SVTA 800V 30A 36 23 ① 品名 Type No. ロット記号（例） Date code S30VTA60 90 • • • ＋ ④ ③ ② 36 ⑤ − Feature ① • 3 Phase-Bridge • Lead terminal • PCB-Mount available
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S30VTA
S30VTA60
J534-1
S30VTA80
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Untitled
Abstract: No abstract text available
Text: BAV74 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200m AMPERES Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr ≤ 4ns *Small Outline Surface Mount SOT-23 Package 50 VOLTS 3 1 2 SOT-23 SOT-23 Outline Dimensions
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BAV74
OT-23
OT-23
15-Jul-05
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