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    DIODE MARKING V8 Search Results

    DIODE MARKING V8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING V8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDV708D Variable Capacitance Diode Variable Capacitance Diode Features and Benefits  Suitable for UHF band VCO  Low series resistance : rs=0.7 Typ. SOD-323 Ordering Information Part Number Marking Code Package Packaging SDV708D V8□ SOD-323 Tape & Reel


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    PDF SDV708D OD-323 06-JAN-13 KSD-D6C034-000

    smd code marking v8 sot23

    Abstract: philips marking 06
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification 2002 Aug 06 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 MARKING • Low forward voltage • Small SMD package


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    PDF M3D088 PMBD354 PMBD354 MGC487 MGC421 SCA74 01/pp8 smd code marking v8 sot23 philips marking 06

    Untitled

    Abstract: No abstract text available
    Text: SDV708D Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1 1 2


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    PDF SDV708D OD-323 KSD-C031-001

    C10V

    Abstract: SDV708D DIODE marking V8
    Text: SDV708D Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : 1.25±0.1 0.3~0.35 Outline Dimensions mm 2.5±0.1 1.7±0.1 1 2


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    PDF SDV708D OD-323 KSD-C031-000 C2V/10V 470MHz C10V SDV708D DIODE marking V8

    C10V

    Abstract: SDV708Q
    Text: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 Outline Dimensions unit : mm 0.70~0.90 0.32 Max. 1.50~1.70 1.10~1.30 1


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    PDF SDV708Q OD-523 KSD-E017-001 C10V SDV708Q

    Untitled

    Abstract: No abstract text available
    Text: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 unit : mm 1.6±0.1 1.2±0.1 0.8±0.1 0.2 Min. Outline Dimensions 0~0.1


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    PDF SDV708Q OD-523 KSD-E017-001

    C10V

    Abstract: SDV708Q
    Text: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 unit : mm 1.6±0.1 1.2±0.1 0.8±0.1 0.2 Min. Outline Dimensions 0~0.1


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    PDF SDV708Q OD-523 KSD-E017-000 C2V/10V 470MHz C10V SDV708Q

    C10V

    Abstract: SDV708D
    Text: SDV708D 얗 Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1


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    PDF SDV708D OD-323 KSD-C031-001 C10V SDV708D

    Untitled

    Abstract: No abstract text available
    Text: V8PM12-M3, V8PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available


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    PDF V8PM12-M3, V8PM12HM3 J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: V8P45-M3, V8P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available


    Original
    PDF V8P45-M3, V8P45HM3 J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available


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    PDF O-277A AEC-Q101 J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available


    Original
    PDF J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V8P45-M3, V8P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available


    Original
    PDF V8P45-M3, V8P45HM3 O-277A AEC-Q101 J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: V8P6-M3, V8P6HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.37 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available


    Original
    PDF J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    zener zp 278

    Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
    Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20


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    PDF 500mW DODO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B zener zp 278 Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type General Purpose PIN Diode BAP1321-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches ● Low diode capacitance +0.1


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    PDF BAP1321-03 OD-323

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAP1321-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches ● Low diode capacitance +0.1 2.6-0.1 1.0max ● Low diode forward resistance


    Original
    PDF BAP1321-03 OD-323

    BAP1321-03

    Abstract: SC-76 DIODE S4 92
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled


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    PDF BAP1321-03 sym006 OD323 SC-76) SCA76 R77/03/pp7 BAP1321-03 SC-76 DIODE S4 92

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION


    Original
    PDF BAP1321-03 sym006 OD323 SC-76) R77/03/pp8

    DIODE marking S4 06

    Abstract: SMD MARKING CODE s4 BAP1321-03 SC-76
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled PIN


    Original
    PDF BAP1321-03 sym006 OD323 SC-76) R77/03/pp8 DIODE marking S4 06 SMD MARKING CODE s4 BAP1321-03 SC-76

    A2 DIODE SMD CODE MARKING

    Abstract: smd code marking sot23 DIODE package sot23 smd marking A1 marking CODE R SMD DIODE smd diode marking code a2 SMD MARKING CODE M 4 Diode PMBD354
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification Supersedes data of 2002 Aug 06 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 PINNING


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    PDF M3D088 PMBD354 SCA75 613514/02/pp8 A2 DIODE SMD CODE MARKING smd code marking sot23 DIODE package sot23 smd marking A1 marking CODE R SMD DIODE smd diode marking code a2 SMD MARKING CODE M 4 Diode PMBD354

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 2003 Mar 25 NXP Semiconductors Product data sheet Schottky barrier double diode PMBD354 PINNING FEATURES • Low forward voltage


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    PDF M3D088 PMBD354 613514/02/pp7

    smd code marking v8 sot23

    Abstract: smd code marking WV DIODE package sot23 smd marking A1 PMBD354 NXP SMD diode MARKING CODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 2003 Mar 25 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD354 PINNING • Low forward voltage


    Original
    PDF M3D088 PMBD354 MGC487 613514/02/pp7 smd code marking v8 sot23 smd code marking WV DIODE package sot23 smd marking A1 PMBD354 NXP SMD diode MARKING CODE

    BAV70-A4

    Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
    Text: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


    OCR Scan
    PDF BAV70 OT-23 BAV70 C9/C20 50MHz ZC830A ZC831A ZC832A BAV70-A4 Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16