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    DIODE N40 Search Results

    DIODE N40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    DIODE N40 Price and Stock

    Hirschmann Electronics GmbH & Co Kg GDM 3009 J W/IN4007 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 3009 J W/IN4007 DIODE ME 23
    • 1 $7.23
    • 10 $6.33
    • 100 $5.13
    • 1000 $4.22
    • 10000 $4.22
    		Buy Now

    Hirschmann Electronics GmbH & Co Kg G 4 W 1 F 1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics G 4 W 1 F 1N4004 DIODE ME 3
    • 1 $9.63
    • 10 $8.38
    • 100 $6.91
    • 1000 $5.74
    • 10000 $5.74
    		Buy Now

    Hirschmann Electronics GmbH & Co Kg GM 209 NJ W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GM 209 NJ W/1N4004 DIODE ME
    • 1 $8.28
    • 10 $7.2
    • 100 $5.94
    • 1000 $4.93
    • 10000 $4.93
    		Get Quote

    Hirschmann Electronics GmbH & Co Kg GDM 2009 J W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 2009 J W/1N4004 DIODE ME
    • 1 $8.45
    • 10 $7.4
    • 100 $5.99
    • 1000 $4.93
    • 10000 $4.93
    		Get Quote

    DIODE N40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSP70

    Abstract: No abstract text available
    Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series


    Original     		PDF TSP2305A TSP40GD120P TSP25G135T O-247 TSP25GD135T TSP25G135P TSP25GD135P TSP70

    N40 DIODE

    Abstract: No abstract text available
    Text: JOG-00972 OKI Electronics Components OL595N-40/P20 Rev.1 [May. 2002 ] 1550nm+/-20nm 40mW Pulsed MQW Laser Diode Coaxial Module with SMF. 1. DESCRIPTION OL595N-40/P20 is a 1550nm Laser Diode in coaxial package with SMF. 2. FEATURES • · · · Fiber output: Po=40mW


    Original     		PDF JOG-00972 OL595N-40/P20 1550nm /-20nm OL595N-40/P20 70tains N40 DIODE

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. SJPZ-N40 1. Scope The present specifications shall apply to an SJPZ-N40. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 080916 1／4 SANKEN ELECTRIC CO., LTD.


    Original     		PDF SJPZ-N40. SJPZ-N40 UL94V-0

    MBN400GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N400GR12A-0 MBN400GR12A 00A/1200V, Weight480g MBN400GR12A Hitachi DSA0047

    ETON

    Abstract: MBN400GR12A PC2500
    Text: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N400GR12A-0 MBN400GR12A 00A/1200V, Weight480g ETON MBN400GR12A PC2500

    Clock Generator intel atom n450

    Abstract: Clock Generator intel atom n470 Intel atom Dual N455 ATOM intel N570 SODIMM DDR3 Mechanical Dimensions BGA559 l atom n450 pin configuration STPC Clock Generator intel atom n455 nm10 n450
    Text: Intel Atom Processor N400 & N500 Series Datasheet - Volume 1 This is volume 1 of 2. Refer to Document Ref# 322848 for Volume 2. June 2011 Revision 003 Document Number: 322847-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,


    Original     		PDF

    BGA559

    Abstract: JTAG xdp CONNECTOR Clock Generator intel atom n450 n450 atom processor l atom n450 pin configuration
    Text: Intel Atom Processor N400 Series Datasheet - Volume 1 This is volume 1 of 2. Refer to Document Ref# 322848 for Volume 2. April 2010 Revision 002 Document Number: 322847-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,


    Original     		PDF

    AN7254

    Abstract: RFM12N35 RFM12N40
    Text: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,


    Original     		PDF RFM12 RFM12N35, RFM12N40 AN7254 RFM12N35 RFM12N40

    MBN400GR12A

    Abstract: No abstract text available
    Text: PDJ-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [定格 400A/1200V, 1in1 パッケージタイプ] 特長 外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用


    Original     		PDF PDJ-N400GR12A-0 MBN400GR12A 00A/1200V, TC125 MBN400GR12A

    SAF7730HV

    Abstract: BB 509 varicap diode CP3236D TDA8841 phx4nq60e PHX10NQ60E SAA4849PS Philips SAF7730HV om8839ps saf7730hv 331
    Text: PHILIPS SEMICONDUCTORS DN 54 December 31, 2004 SEE DN54 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF

    tda8841 s1

    Abstract: saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1
    Text: Philips Semiconductors December 31, 2004 Attention: Materials Manager, Purchasing Manager and Philips' Products Manager Subject: Philips Semiconductors' Product Discontinuation Notice Number DN-54 Dear Philips Semiconductors Customer or Distributor: This letter confirms to your company that Philips Semiconductors is discontinuing the manufacture of a number of its'


    Original     		PDF DN-54 tda8841 s1 saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    A114D

    Abstract: AN217 DAN217C
    Text: Diode arrays Diode array summary Part no. DC reverse voltage V r V Mean rectifying current l0 (mA) Reverse recovery time trr (ns) Terminal capacitance (max) CT (PF) Package type Circuit diagram Page High speed switching diode arrays FMN1 80 25 4 3.5 SMD5


    OCR Scan     		PDF IMN11 IMP11 AN209S AN215 DAN803 DAP209S DAP215 AP401 AN403 AP601 A114D AN217 DAN217C

    DIODE A112

    Abstract: AP-803 AN2153 FTL 12-1 202k 204k
    Text: IM • Diode Array • High-Speed Switching Diode Arrays Internal circuit Type D AN 222 • Special Diode Arrays tr r Vr V lo (m A) Max. (ns) 80 100 4 Í1) I2I (31 IT fii EM3 Internal circuit — D A N 202U 80 100 4 UMT I . + D A N 202K 80 100 4 SMT 31 D AN201


    OCR Scan     		PDF AN201 DIODE A112 AP-803 AN2153 FTL 12-1 202k 204k

    LF400

    Abstract: N40 DIODE
    Text: O K I electronic components QL361 N-40 , QL364 N-40 1.3 |im High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL361N-4C and OL364N-40 are extremely high power, 1.3 nm laser-diode DIP modules with single-mode fiber pigtails. The Oki laser chips achieve single-mode fiber output of 40 mW. These


    OCR Scan     		PDF QL361 QL364 OL361N-4C) OL364N-40 14-pin OL361N-40) GD224L. OL361N-40, OL364N-4Q QL361N-40 LF400 N40 DIODE

    OL3201N-40

    Abstract: OL3204N-40 720nm
    Text: E2V0015-37-X1 OKI electronic components OL32QIN-40, OL3204N-40 1.3 High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3201N-40 and OL3204N-40 are extremely high power, 1.3 jim laser-diode DIP m odules with single-m ode fiber pigtails. The OKI laser chips achieve single-m ode fiber output of over


    OCR Scan     		PDF E2V0015-37-X1 OL3201N-40, OL3204N-40_ OL3201N-40 OL3204N-40 14-pin OL3201N-40) OL32Q1N-40, OL3204N-40 OL32Q1 720nm

    Untitled

    Abstract: No abstract text available
    Text: E2V0015-37-X1 O K I electronic components QL3 2 01N-4 0 , QL3204N-40 1.3 jim High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3201N-40 and OL3204N-40 are extremely high power, 1.3 J im laser-diode DIP modules with single-mode fiber pigtails. The OKI laser chips achieve single-mode fiber output of over


    OCR Scan     		PDF E2V0015-37-X1 01N-4 QL3204N-40 OL3201N-40 OL3204N-40 14-pin OL3201N-40) OL32Q1N-40, OL3204N-40 OL32Q1

    4n4001

    Abstract: 4N4U 4N40 4N39 GE SCR 1000
    Text: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­


    OCR Scan     		PDF 3fl750fll 220VAC the4N40 4n4001 4N4U 4N40 4N39 GE SCR 1000

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		PDF F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: $ 1 N4003A K /D io d e s -4 1N 4003A - > =i < * - k w ? t. -t -/ Silicon Diffused Junction Rectifying Diode Glass Sealed Type) • 1) ¿1^7 2) tw it\D £ 0 /D im e n s io n s (Unit : mm) 5o '¡'•WT&Zo 3) S i it f 4) 7 R S t iT '£ > 5 „ • Features


    OCR Scan     		PDF N4003A

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    Untitled

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON ULKgraMOeS S TE 5 0 N40 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE50N40 V dss 400 V R D S o n Id < 0 .0 7 5 Q. 50 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP350 FOR RATING)


    OCR Scan     		PDF STE50N40 IRFP350 E81743)

    IN407

    Abstract: 1N407S 1n4032 IN407S 1N4857 n406 1N40SJ 1N4033A zener 1N4033 diode 1N4053
    Text: 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5% 1 N4057 thru TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4085A EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005%/°C AND 0.002%/°C HERMETICALLY SEALED, METALLURGICALLY BONDED, DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE


    OCR Scan     		PDF N4057 1N4085A 1N4857 100-C 1N4057A 1N4053 IN407 1N407S 1n4032 IN407S 1N4857 n406 1N40SJ 1N4033A zener 1N4033 diode