TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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Untitled
Abstract: No abstract text available
Text: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module
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635nm-5mW
N635-5
NM635-5
EPM635-5
MM635-5
MM635nm
com/mmd635nm5m
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NM635-5
Abstract: Laser module 635nm-5mW RED laser diode operating Temperature laser diode 12 pin red diode laser EPM635-5 MM635-5 N635-5 US-Lasers
Text: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module
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635nm-5mW
N635-5
NM635-5
EPM635-5
MM635-5
MM635nm
com/mmd635nm5m
NM635-5
Laser module
RED laser diode operating Temperature
laser diode 12 pin
red diode laser
EPM635-5
MM635-5
N635-5
US-Lasers
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N645-10
Abstract: 645nm Laser Diode 10 pin
Text: n645nm 10mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N645-10 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 645nm (Typ.) Optical Power: 10mW CW Threshold Current: 50mA (Typ.)
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n645nm
N645-10
645nm
N645-10
645nm
Laser Diode 10 pin
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N6555
Abstract: N655-5 655NM n655nm
Text: n655nm 5mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 5mW CW Threshold Current: 20mA (Typ.)
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n655nm
N655-5
655nm
N6555
N655-5
655NM
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N645-20
Abstract: No abstract text available
Text: n645nm 20mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N645-20 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 645nm (Typ.) Optical Power: 20mW CW Threshold Current: 40mA (Typ.)
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n645nm
N645-20
645nm
N645-20
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laser diode 30mw
Abstract: 655NM 30mW n655nm N655-30 655-nm
Text: n655nm 30mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-30 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 30mW CW Threshold Current: 60mA (Typ.)
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n655nm
N655-30
655nm
laser diode 30mw
655NM
30mW
N655-30
655-nm
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N635-5
Abstract: photo diode 635nm
Text: 635nm 5mW laser diode NVG, Inc. VISIBLE LASER DIODES Technical Data MODEL # N635-5 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 635nm (Typ.) Optical Power: 5mW CW Threshold Current: 40mA (Typ.)
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635nm
N635-5
635nm
N635-5
photo diode 635nm
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n655nm
Abstract: N655-20 Laser Diode 10 pin PO C 90
Text: n655nm 20mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-20 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 20mW CW Threshold Current: 40mA (Typ.)
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n655nm
N655-20
655nm
N655-20
Laser Diode 10 pin
PO C 90
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photo diode 635nm
Abstract: laser diode 635nm 1.0mW 635nm laser diode 635nm N635-10
Text: 635nm 10mW laser diode NVG, Inc. VISIBLE LASER DIODES Technical Data MODEL # N635-10 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 635nm (Typ.) Optical Power: 10mW CW Threshold Current: 30mA (Typ.)
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635nm
N635-10
635nm
Po10mW
photo diode 635nm
laser diode 635nm 1.0mW
laser diode 635nm
N635-10
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photo diode 635nm
Abstract: 635nm N635-15 635nm laser diodes
Text: 635nm 15mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N635-15 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 635nm (Typ.) Optical Power: 15mW CW Threshold Current: 50mA (Typ.)
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635nm
N635-15
635nm
photo diode 635nm
N635-15
635nm laser diodes
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N6551
Abstract: TO 5.6mm package N655-10 Laser Diode 10 pin
Text: n655nm 10mW Laser Diode - 5.6mm Package NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-10 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 10mW CW Threshold Current: 30mA (Typ.)
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n655nm
N655-10
655nm
N6551
TO 5.6mm package
N655-10
Laser Diode 10 pin
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20N60A
Abstract: D-68623 20N60U1 20N60AU
Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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N60U1
N60AU1
D-68623
20N60U1
20N60AU1
20N60A
20N60U1
20N60AU
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30N60AU1
Abstract: 30N60U1 IXSH30N60U1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR
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N60U1
N60AU1
30N60U1
30N60AU1
30N60AU1
30N60U1
IXSH30N60U1
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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PUSBMxX4-TL
Abstract: No abstract text available
Text: N6 PUSBMxX4-TL series HX SO High-speed USB OTG ESD protection diode arrays Rev. 2 — 16 April 2012 Preliminary data sheet 1. Product profile 1.1 General description PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge ESD diode arrays for USB 2.0 (On-The-Go (OTG) interfaces. The devices provide protection to
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DFN1616-6
OT1189-1/XSON6)
PUSBMxX4-TL
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SOT1189-1
Abstract: PUSBMxX4-TL
Text: N6 PUSBMxX4-TL series HX SO High-speed USB OTG ESD protection diode arrays Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge ESD diode arrays for USB 2.0 (On-The-Go (OTG) interfaces. The devices provide protection to
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DFN1616-6
OT1189-1/XSON6)
SOT1189-1
PUSBMxX4-TL
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Untitled
Abstract: No abstract text available
Text: N6 PUSBMxX4-TL series HX SO High-speed USB OTG ESD protection diode arrays Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge ESD diode arrays for USB 2.0 (On-The-Go (OTG) interfaces. The devices provide protection to
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DFN1616-6
OT1189-1/XSON6)
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A114D
Abstract: AN217 DAN217C
Text: Diode arrays Diode array summary Part no. DC reverse voltage V r V Mean rectifying current l0 (mA) Reverse recovery time trr (ns) Terminal capacitance (max) CT (PF) Package type Circuit diagram Page High speed switching diode arrays FMN1 80 25 4 3.5 SMD5
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IMN11
IMP11
AN209S
AN215
DAN803
DAP209S
DAP215
AP401
AN403
AP601
A114D
AN217
DAN217C
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M G P11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C
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P11N60ED/D
N60ED
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C
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MGP11N60ED/D
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Untitled
Abstract: No abstract text available
Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings
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OCR Scan
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N60U1
N60AU1
O-247
4hflb22b
20N60U1
20N60AU1
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Untitled
Abstract: No abstract text available
Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous
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10N60U1
N60AU1
4bflb22b
GD0223Ã
10N60AU1
D94006DE,
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