MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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Untitled
Abstract: No abstract text available
Text: TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly
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TLP290
TLP290
3750Vrms)
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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11-3C1
Abstract: transistor 9036 tlp290 TLP290-4
Text: TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly
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TLP290
TLP290
3750Vrms)
UL1577,
E67349
11-3C1
transistor 9036
TLP290-4
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FDFMA2P029Z
Abstract: diode P29
Text: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95m: Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward
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FDFMA2P029Z
FDFMA2P029Z
diode P29
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FDFMA2P029Z
Abstract: marking p29
Text: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward
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FDFMA2P029Z
FDFMA2P029Z
marking p29
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FDFMA2P029Z
Abstract: a5200
Text: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward
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FDFMA2P029Z
500mA
FDFMA2P029Z
a5200
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Untitled
Abstract: No abstract text available
Text: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95m: Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward
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FDFMA2P029Z
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new bright R288-2
Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz
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200/266/333MHZ
Y1-27MHz
Y2-14
318MHz
ICS950405
M10/M11
K8T800
Y5-32
768MHz
266/533MB/s
new bright R288-2
24c08an
new bright R288
ac14g
ICS950405
CADIN14
K8T800
y532
quanta
PHD108NQ03LT
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31AZ
Abstract: No abstract text available
Text: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward
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FDFMA2P029Z
FDFMA2P029Z
31AZ
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Untitled
Abstract: No abstract text available
Text: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95m: Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward
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FDFMA2P029Z
FDFMA2P029Z
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Zener Diode BA11
Abstract: SFs SOT23-3 zener diode A29 flyback transformer design for mosFET Zener Diode BA19 Beckman ra6 PAH25 74ac126 PAH18 router board r52 hn
Text: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E Rev 1.0: Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.
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Am186CC/CH/CH
AM186CC
186EXP/TIB
Am186CC/CH/CU
T7256
79C32
79C32
16x12
Zener Diode BA11
SFs SOT23-3
zener diode A29
flyback transformer design for mosFET
Zener Diode BA19
Beckman ra6
PAH25
74ac126
PAH18
router board r52 hn
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OP295
Abstract: OP290 OP294 OP299
Text: @ OPTEK Product B ulletin O P294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features Absolute M axim um R atings <Ta = 2 5 ° C unless otherw ise noted • Characterized at 5mA for battery operated systems or other low drive current systems
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OP294
OP294,
OP299
OP294)
OP299)
OP299
OP290
OP295
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP296G TENTATIVE TOSHIBA PHOTOCOUPLER PHOTO RELAY T L P29 6G TELECOMMUNICATION DATA ACQUISITION M F A il JRFMFMT INKTRl IM FM T A T IO W The T U SJrL lB A consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a 8 lead DIP
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TLP296G
TLP296G
100mA
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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239B diode
Abstract: SLP144B SLP246B SLP158B SLP-146B SLP-246B Slp 246b 258B DIODE SLP-244B SLP244B
Text: 7 cH707fc] 0002527 a |~’ LED Light Emitting Diode 7997076 SANYO SEMICONDUCTOR CORP 7 U - A M 7°LED Wl « £ Type No. % % tm Drawing No. fe Source Color Lead Frame Type L E D Absolute Maximum Ratings Optoelectric Characteristics VF Typ. Peak Wave Length
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cH707fc]
SLP-139B
SLP-239B
SLP-439B
SLP-144B
SLP-244B
239B diode
SLP144B
SLP246B
SLP158B
SLP-146B
SLP-246B
Slp 246b
258B DIODE
SLP244B
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IFR-GDC40PW
Abstract: No abstract text available
Text: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE
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Ry110
Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #
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QD0D013
534-61S1
A1D207A
A1D207E
A1E207A
A1E207E
A1A210D
A1A210E
A1B210D
A1B210E
Ry110
diode cross reference
RY104
a2305
RY115
MICROWAVE ASSOCIATES
IN3716
diode ry24
RY101
1N3717
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Untitled
Abstract: No abstract text available
Text: Jffe 3V> V&L P29FCT520AT/BT/CT — P29FCT521AT/BT/CT PIPELINE REGISTERS *} -FEATURES • ■ ■ ■ ■ ■ Power-off disable feature ■ Matched Rise and Fall times ■ Fully Compatible with TTL Input and Output
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P29FCT520AT/BT/CT
P29FCT521AT/BT/CT
AM29520/521
P29FCT
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: P29FCT520AT/BT/CT — P29FCT521AT/BT/CT PIPELINE REGISTERS FEATURES Power-off disable feature Matched Rise and Fall times Fully Compatible with TTL Input and Output Logic Levels 64 mA Sink Current Com’l , 32 mA (Mil) 15 mA Source Current (Com'l), 12 mA (Mil)
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P29FCT520AT/BT/CT
P29FCT521AT/BT/CT
AM29520/521
P29FCTS20AT/BT/CTâ
P29FCT
MIL-STD-883,
520AT/521AT
520BT/521BT
520CT/521CT
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FB2L
Abstract: 29520
Text: P29PCT520/A P29PCT521/A PIPELINE REGISTERS FEATURES • Full CMOS Implementation Fully TTL Compatible Inputs ■ Functionally Equivalent to Bipolar 29520/29521 Type Products TTL, NMOS and CMOS Compatible Outputs Produced with PACE Technology ■ Low Power Operation
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P29PCT520/A
P29PCT521/A
24-Pln
28-Pad
PC29PCT520/A
P29PCT
MIL-STD-B83,
20A/521A
FB2L
29520
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