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    DIODE P3C Search Results

    DIODE P3C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE P3C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD17006AGF-011

    Abstract: UPD17000 RDS decoder LOUD SEL SK 69 DIODE P4A3 pc1346
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD17006AGF-011 4-BIT SINGLE-CHIP MICROCONTROLLER WITH PRESCALER, PLL FREQUENCY SYNTHESIZER, AND IF COUNTER FOR AUTOMOBILE FM, MW, AND LW RADIOS DESCRIPTION The µPD17006AGF-011 is a 4-bit CMOS microcontroller for digital tuning and can receive European FM,


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    PDF PD17006AGF-011 PD17006AGF-011 UPD17000 RDS decoder LOUD SEL SK 69 DIODE P4A3 pc1346

    RDS decoder

    Abstract: UPD17006 upd17006agf lcd 1602 connection uPD16430A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    P3CN012W1

    Abstract: fujitsu FTR-p3 relay p3cn01 relay 17a 12vdc
    Text: FTR-P3 SERIES COMPACT POWER RELAY 1 POLE—25 A FOR AUTOMOTIVE APPLICATIONS FTR-P3 Series • FEATURES Compact for high density packaging. 65% volume of previous generation FBR 51/52 Series . ● High contact capacity with proven contact material. (100,000 operations, 14 V, 25 A achieved, even with reduced size).


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    PDF POLE--25 600mW 012iamantlaan P3CN012W1 fujitsu FTR-p3 relay p3cn01 relay 17a 12vdc

    takamisawa RELAYS

    Abstract: P3CN012W1 takamisawa relay 12VDC 1 pole takamisawa relay takamisawa relay 12VDC 4 pole FTRP3CN012 takamisawa PCB relay takamisawa ftrp3cn012w takamisawa relay 12
    Text: FUJITSU TAKAMISAWA COMPONENT CATALOG COMPACT POWER RELAY 1 POLE—25 A FOR AUTOMOTIVE APPLICATIONS FTR-P3 SERIES • FEATURES Compact for high density packaging. 65% volume of previous generation FBR 51/52 Series . ● High contact capacity with proven contact material.


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    PDF POLE--25 600mW takamisawa RELAYS P3CN012W1 takamisawa relay 12VDC 1 pole takamisawa relay takamisawa relay 12VDC 4 pole FTRP3CN012 takamisawa PCB relay takamisawa ftrp3cn012w takamisawa relay 12

    P3CN012W1

    Abstract: P3CN
    Text: FTR-P3 SERIES COMPACT POWER RELAY 1 POLE—25 A FOR AUTOMOTIVE APPLICATIONS FTR-P3 Series • FEATURES Compact for high density packaging. 65% volume of previous generation FBR 51/52 Series . ● High contact capacity with proven contact material. (100,000 operations, 14 V, 25 A achieved, even with reduced size).


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    PDF POLE--25 600mW P3CN012W1 P3CN

    Untitled

    Abstract: No abstract text available
    Text: FTR-P3 SERIES COMPACT POWER RELAY 1 POLE—25 A FOR AUTOMOTIVE APPLICATIONS FTR-P3 Series • FEATURES Compact for high density packaging. 65% volume of previous generation FBR 51/52 Series . ● High contact capacity with proven contact material. (100,000 operations, 14 V, 25 A achieved, even with reduced size).


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    PDF 600mW

    Untitled

    Abstract: No abstract text available
    Text: P3C3147 SUPER FAST 4K x 1 STATIC CMOS RAM SCRAM P R E O M D M W FEATURES • High Speed - 6/7/8 ns (Address Access) - 4/5/6 ns (Chip Select Access) Separate Data I/O Three-State Output ■ Single 3.3V ± 0.2V Power Supply TTL Logic Level Inputs and Output


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    PDF P3C3147 096-bit

    Untitled

    Abstract: No abstract text available
    Text: P3C3148 SUPER FAST 1Kx 4 STATIC CMOS RAM SCRAM Xf FEATURES • High Speed - 6/7/8 ns (Address Access) - 4/5/6 ns (Chip Select Access) ■ Separate Data I/O ■ Single 3.3V ± 0.2V Power Supply ■ TTL Logic Level Inputs and Outputs ■ Low Power Operation


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    PDF P3C3148 24-Pin P3C3148

    Untitled

    Abstract: No abstract text available
    Text: P3C3148 SUPER FAST 1Kx 4 STATIC CMOS RAM SCRAM P K E L D D fflD M M W X r- FEATURES • Highspeed


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    PDF P3C3148 24-Pln 096-bit P3C3148

    Untitled

    Abstract: No abstract text available
    Text: P3C3148 SUPER FAST 1K x 4 STATIC CMOS RAM SCRAM FEATURES Separate Data I/O • Highspeed - 5/6Z7/8 ns (Address Access) - 3/4/S/6 ns (Chip Select Access) Three-State Outputs TTL Logic Level Inputs and Outputs ■ Single 3.3V ± 0.2V Power Supply Produced with PACE III Technology


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    PDF P3C3148 24-Pin 28-Pin 450x450 P3C3148

    Untitled

    Abstract: No abstract text available
    Text: p c s e l o m o n ä ir iv P3C3148 SUPER FAST 1K x 4 STATIC CMOS RAM SCRAM FEATURES Separate Data I/O • Highspeed - 5/6Z7/8 ns (Address Access) - 3Z4/5/6 ns (Chip Select Access) Three-State Outputs TTL Logic Level Inputs and Outputs ■ Single 3.3V ± 0.2V Power Supply


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    PDF P3C3148 24-Pin 28-Pin 450x450 P3C3148 096-bit 15291bH7

    MA 166s

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR 20E D 70^25^7 0001530 fi • P3C3188/P3C3188L SUPER FAST 16K x 4 STATIC CMOS RAMS SCRAMS 7$ r a iL O G Ä M iW — - FEATURES I Single 3.3V +0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation ■ Three-State Outputs


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    PDF P3C3188/P3C3188L Active-12/15 P3C3188L Technology11 24-Pin 28-Pin MIL-STD-883C P3C3188/L -12PC MA 166s

    1517P

    Abstract: P4C198 OF IC 723 14 pin dip
    Text: PERFORMANCE SEMI CONDUCTOR 5QE D I TGhEST? D001230 3 P3C3164 SUPER FAST 8K X 8 STATIC CMOS RAMS SCRAMS * PGHEILOM IIIM ÂIBV - FEATURES • Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation ■ High speed {Equal Access and Cycle Times)


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    PDF P3C3164 D001230 P3C3164L 28-Pin MIL-STD-883C P3C3198 -15PC -15JC -15DC -15LC 1517P P4C198 OF IC 723 14 pin dip

    A7153

    Abstract: No abstract text available
    Text: P E R F O R MA N C E SEMI CONDUCTOR 50E D • TOhEST? 0001230 P3C3164 SUPER FAST 8K X 8 STATIC CMOS RAMS SCRAMS 3 ■ PIRHLBIMIBMA1V ^ _ ■ 2$ - FEATURES ■ Single 3.3V + 0.2V Pow er Supply fo r High Speed w ith Low Noise and Low Pow er Dissipation ■


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    PDF P3C3164 P3C3164L IL-STD-883C P3C3198 -15PC -15JC -15DC -15LC -15DMB -15LMB A7153

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR 20E » Tobase? aoQissb t P3C31982/L SUPER FAST 16KX 4 STATIC CMOS RAM SCRAM FEATURES Single 3.3V +0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation Three-State Output Separate Inputs and Outputs - P3C31982/L Outputs In High ZDuring Write


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    PDF P3C31982/L P3C31982L P3C31982/L 28-Pin 28-Pln MIL-STD-883C -12PC -15PC -25PC -12JC

    15811

    Abstract: lz 53s 158111
    Text: PERFORMANCE SEMICONDUCTOR 20E D TGbEST? OOG154b 7 P3G3198/P3C3198L SUPER FAST 16Kx 4 STATIC CMOS RAMS SCRAMS P R E L IM IN A R Y T - U - H - i o FEATURES • Full CMOS, 6T Cell ■ Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation


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    PDF OOG154b P3G3198/P3C3198L T-H-33 Active-12 Active-20 P3C3198L MIL-STD-883C P3C3198 -12PC -12JC 15811 lz 53s 158111

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SE MI CONDUCTOR 20E D 70^25^7 000124b 7 P3C3198/P3C3198L SUPER FAST 16K X 4 STATIC CMOS RAMS SCRAMS 7$ FEATURES • Full CMOS, 6T Cell ■ Output Enable and Chip Enable Control Functions ■ Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation


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    PDF 000124b P3C3198/P3C3198L Active-12 Active-20 P3C3198L 28-Pin MIL-STD-883C P3C3198 -12PC -12JC

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR 5 OE D • TObaST? OOQlSSt T O ÎM IF Û ^IM IÂ T F D !^ P3C31982/L SUPER FAST 16K X 4 STATIC CMOS RAM SCRAM FEATURES Three-State Output ■ Single 3.3V +0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation


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    PDF P3C31982/L P3C31982L 28-Pin 28-Pln MIL-STD-883C P3C31982 -12PC -12JC -12DC

    PD17006AGF-051-3B9

    Abstract: UTC LCD Driver 14 segment display SGS-TDA7313 PD17006AGF PTY-31 PD17006AGF-051 PD17006
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER WITH BUILT-IN PRESCALER, PLL FREQUENCY SYNTHESIZER, AND IF COUNTER FOR AUTOMOTIVE FM/MW/LW RADIO APPLICATIONS The ^PD17006AGF-051 is a 4-bit CMOS microcontroller for use in digital tuners designed to receive the European


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    PDF uPD17006AGF-051 PD17006AGF-051-3B9 UTC LCD Driver 14 segment display SGS-TDA7313 PD17006AGF PTY-31 PD17006AGF-051 PD17006

    PTY-31

    Abstract: philips cd changer sda scl 72 diodo mst BTP 10/200 DIODO SK 107 Metrix S.A. pj 899 diode DIODO LED tda7313 TEA6300
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD17006AGF-052 4-BIT SINGLE-CHIP MICROCONTROLLER WITH BUILT-IN PRESCALER, PLL FREQUENCY SYNTHESIZER, AND IF COUNTER FOR AUTOMOTIVE FM/MW/LW RADIO APPLICATIONS The/xPD17006AGF-052 is a 4-bit CMOS microcontroller for use in digital tuners designed to receive the European


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    PDF uPD17006AGF-052 The/xPD17006AGF-052 PTY-31 philips cd changer sda scl 72 diodo mst BTP 10/200 DIODO SK 107 Metrix S.A. pj 899 diode DIODO LED tda7313 TEA6300

    D17709GC

    Abstract: philips cd changer sda scl SGS-TDA7313 D17709 TPD16 d1770
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ juPD17709GC-051 4-BIT SINGLE-CHIP MICROCONTROLLER WITH BUILT-IN PRESCALER, PLL FREQUENCY SYNTHESIZER, AND IF COUNTER FOR AUTOMOTIVE FM/MW/LW RADIO APPLICATIONS The juPD17709GC-051 is a 4-bit CMOS microcontroller for use in digital tuners designed to receive the European


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    PDF uPD17709GC-051 juPD17709GC-051 D17709GC philips cd changer sda scl SGS-TDA7313 D17709 TPD16 d1770

    Untitled

    Abstract: No abstract text available
    Text: TÏ TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR dËT| TGTTSSO O G l b f l T f l ^ | 99D 16898 DT-SR-I TOSHIBA FIELD EFFECT TRANSISTOR Y T F 8 3 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ff-MOSI) INDUSTRIAL APPLICATIONS Unit in nun


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    PDF IC13MAX. 250yA 00A/us

    ci 741

    Abstract: 6p3c
    Text: SAMSUNG SEMICO NDUCT OR INC DE O O Q bS^ DE D E f j ^ 41 4 2 Ê P S I 682/6841686 ñ 1 8-Bit Magnitude Comparators 7 ^ V S " '/ 7 FEATURES DESCRIPTION • Compares Two 8-Bit Words • ’682 has 20k0 pull- up Resistors on the Q Inputs These magnitude comparators perform comparisons of two


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    PDF 54/74LS KS74HCTLS: KS54HCTLS: 7Tb414S 14-Pin ci 741 6p3c

    4p1c

    Abstract: samsung nand derating
    Text: SAMSUNG SEMICONDUCTOR INC DE D e 7 ^ 4 1 4 2 DDDbEBS 5 | - T ~ < / < Z 'J 7 FEATURES DESCRIPTION • Compares Two 8-Blt Words • '682 has 20k 0 pullup Resistors on the Q Inputs • Function, pln-out, speed and drive compatibility with 54f74ALS logic family


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    PDF 54f74ALS KS74AHCT: KS54AHCT: 300-mil 7Tb414S 90-XO 14-Pin 4p1c samsung nand derating