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    DIODE PACKING CODE LAYOUT G SOT23 Search Results

    DIODE PACKING CODE LAYOUT G SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE PACKING CODE LAYOUT G SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PJUSB05-4 SOT23-6L FEATURES Unit：inch mm • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1µA@5V 0.119(3.00) 0.110(2.80) • Breakdown voltage : 6.37V-7.04V@1mA • Low Capacitance (8.5pF typical) • ESD Protection Meeting IEC1000-4-2


    Original     		PDF PJUSB05-4 OT23-6L IEC1000-4-2 2002/95/EC IEC61249 OT23-6L OT23-6L, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PJUSB05-4 SOT23-6L FEATURES Unit：inch mm • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1 µA@5V 0.119(3.00) 0.110(2.80) • Breakdown voltage : 6.37V-7.04V@1mA 0.009(0.22) 0.003(0.08) 0.067(1.70) 0.059(1.50) • ESD Protection Meeting IEC1000-4-2


    Original     		PDF PJUSB05-4 OT23-6L OT23-6L IEC1000-4-2 2002/95/EC IEC61249 OT23-6L, MIL-STD-750,

    E6433

    Abstract: MARKING CODE 213 marking code 62 3 pin diode diode marking code 58
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


    Original     		PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W E6433 MARKING CODE 213 marking code 62 3 pin diode diode marking code 58

    BBY53

    Abstract: marking code 10 sot23 BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-05W SC79 SCD80
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage • Pb-free RoHS compliant package1) • Qualified according AEC Q101


    Original     		PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53 BBY53-05W BBY53 marking code 10 sot23 BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-05W SC79 SCD80

    marking code INFINEON

    Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


    Original     		PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W

    marking code 52 diode

    Abstract: No abstract text available
    Text: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W 3 D 2 D 1 1 1 2 2 Type BBY51 BBY51-02L* BBY51-02W BBY51-03W


    Original     		PDF BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W BBY51 BBY51-02L* SCD80 marking code 52 diode

    marking code INFINEON

    Abstract: sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 BAR63-02W BBY51 BBY51-02L BBY51-02W *T4 MARKING SC75
    Text: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BBY51 BBY51-02L BBY51-02W


    Original     		PDF BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W SCD80 marking code INFINEON sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 BAR63-02W BBY51 BBY51-02L BBY51-02W *T4 MARKING SC75

    marking code INFINEON

    Abstract: sod323 diode marking code AC marking code diode 14 BAR63-02W BAR63-03W BBY51 BBY51-02L BBY51-02W BBY51-03W BCW66
    Text: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W ! ,  ,   Type BBY51 BBY51-02L BBY51-02W BBY51-03W Package


    Original     		PDF BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W SCD80 marking code INFINEON sod323 diode marking code AC marking code diode 14 BAR63-02W BAR63-03W BBY51 BBY51-02L BBY51-02W BBY51-03W BCW66

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    BAS70

    Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s
    Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L


    Original     		PDF BAS70. BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS70 BAS70-02W BAS70-04S marking 77s

    DIN 6784

    Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
    Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1


    Original     		PDF BAS70. BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS70-05 DIN 6784 marking code TS Diode Mark sot23 4x marking code 76s BAS70-02W BAS70-04S MARKING 74s marking 77s

    bas70-07w

    Abstract: DIODE MARKING CODE LAYOUT G SOT23 BAS70-04S marking G SOT323 Transistor BAS70-02W BAS70-02L BAS70 Series G t marking SOT323 MARKING 02W marking 20 sot363
    Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L


    Original     		PDF BAS70. BAS170W BAS70-04S: BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S bas70-07w DIODE MARKING CODE LAYOUT G SOT23 BAS70-04S marking G SOT323 Transistor BAS70-02W BAS70-02L BAS70 Series G t marking SOT323 MARKING 02W marking 20 sot363

    02LRH

    Abstract: BAR64-03W bar6403w e6327
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. BAR64-02L BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 02LRH BAR64-03W bar6403w e6327

    BAR63-05

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 BAR63-02L BAR63-02V

    marking G5s

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 marking G5s BAR63-02L BAR63-02V

    BAS170W

    Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
    Text: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)


    Original     		PDF BAS70. /BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04

    Untitled

    Abstract: No abstract text available
    Text: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)


    Original     		PDF BAS70. /BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S

    BBY66-05

    Abstract: No abstract text available
    Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-02V BBY66-05


    Original     		PDF BBY66. BBY66-02V BBY66-05 BBY66-05W BBY66-02V OT323

    BAS16

    Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
    Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U


    Original     		PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W

    DIODE MARKING CODE LAYOUT G SOT23

    Abstract: marking code 10 sot23 BAR63-02V BBY66 BBY66-02V BBY66-05 BBY66-05W BCW66 SC75 SC79
    Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free RoHS compliant package 1)


    Original     		PDF BBY66. BBY66-02V BBY66-05 BBY66-05W OT323 DIODE MARKING CODE LAYOUT G SOT23 marking code 10 sot23 BAR63-02V BBY66 BBY66-02V BBY66-05 BBY66-05W BCW66 SC75 SC79

    Untitled

    Abstract: No abstract text available
    Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free RoHS compliant package 1)


    Original     		PDF BBY66. BBY66-02V BBY66-05 BBY66-05W OT323

    Pin diode G4S

    Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L Pin diode G4S BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W

    BAR63-02V

    Abstract: No abstract text available
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L BAR63-02V

    BAS16

    Abstract: transistor marking NA 85 DIODE MARKING CODE G SOT23 DIODE MARKING CODE LAYOUT G SOT23 a6s marking SOt323 marking code 6X bas16 a6 G t marking SOT323 marking 20 sot363 marking 38
    Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ !   Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W " # ,   BAS16-07L4


    Original     		PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 transistor marking NA 85 DIODE MARKING CODE G SOT23 DIODE MARKING CODE LAYOUT G SOT23 a6s marking SOt323 marking code 6X bas16 a6 G t marking SOT323 marking 20 sot363 marking 38