25A, 50V BRIDGE-RECTIFIER
Abstract: PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic
Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE
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PFCM-1500M
25A, 50V BRIDGE-RECTIFIER
PFCM-1500M
rectifier diode piv
26A RECTIFIER BRIDGE
600 watt amps schematic
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500 watt half bridge schematic
Abstract: 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING
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PFCM-1500C
500 watt half bridge schematic
25A, 50V BRIDGE-RECTIFIER
PFCM-1500C
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500 watt half bridge schematic
Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE
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PFCM-1500M
500 watt half bridge schematic
26A RECTIFIER BRIDGE
25A, 50V BRIDGE-RECTIFIER
PFCM-1500M
IR rectifier diode 100A 800V
power diode with piv of 30v
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rectifier diode with piv of 30v
Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING
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PFCM-1500C
rectifier diode with piv of 30v
power diode with piv of 30v
500 watt half bridge schematic
DIODE RECTIFIER BRIDGE
25A, 50V BRIDGE-RECTIFIER
PFCM-1500C
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1N6624U JANTXV
Abstract: "Ultra-Fast Recovery Rectifiers" 1N6629U JANTX JANTX 1N5811
Text: HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25 nsec ≤ trr ≤ 70 nsec TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAXIMUM REVERSE CURRENT @ PIV Volts Amps 55°C 100°C µAmps 25°C 100°C SRS160HE SRS180HE SRS1100HE 600 800
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SRS160HE
SRS180HE
SRS1100HE
1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
SRS1120HE
1N6624U JANTXV
"Ultra-Fast Recovery Rectifiers"
1N6629U JANTX
JANTX 1N5811
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3 phase IGBT gate driver 1200
Abstract: SPM6G140-120D IGBT 50 amp 1200 volt
Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-120D
/-20V
3 phase IGBT gate driver 1200
SPM6G140-120D
IGBT 50 amp 1200 volt
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SPM6G150-060D
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G150-060D
/-20V
SPM6G150-060D
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Untitled
Abstract: No abstract text available
Text: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G150-060D
/-20V
125oC
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IGBT 60A
Abstract: tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D
Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-120D
/-20V
125oC
IGBT 60A
tp 806
IGBT DRIVER SCHEMATIC 3 PHASE
SPM6G140-120D
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IGBT DRIVER SCHEMATIC 3 PHASE
Abstract: Hall 221 hall current sensors IGBT 250 amp 3 phase IGBT gate driver 1200 tp 806 igbt desaturation driver schematic SPM6G250-120D IGBT 50 amp 1200 volt IGBT DRIVER SCHEMATIC
Text: SENSITRON SEMICONDUCTOR SPM6G250-120D TECHNICAL DATA DATASHEET 4109, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G250-120D
/-20V
IGBT DRIVER SCHEMATIC 3 PHASE
Hall 221
hall current sensors
IGBT 250 amp
3 phase IGBT gate driver 1200
tp 806
igbt desaturation driver schematic
SPM6G250-120D
IGBT 50 amp 1200 volt
IGBT DRIVER SCHEMATIC
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diode sy 160
Abstract: n 4113 SPM6G150-060D
Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G150-060D
/-20V
diode sy 160
n 4113
SPM6G150-060D
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IGBT 60A
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-120D
/-20V
125oC
IGBT 60A
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igbt desaturation driver schematic
Abstract: IGBT DRIVER SCHEMATIC 3 PHASE SPM6G250-120D Hall Sensor C
Text: SENSITRON SEMICONDUCTOR SPM6G250-120D TECHNICAL DATA DATASHEET 4109, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G250-120D
/-20V
igbt desaturation driver schematic
IGBT DRIVER SCHEMATIC 3 PHASE
SPM6G250-120D
Hall Sensor C
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IC 4098
Abstract: IGBT desaturation SPM6G080-060D 4098
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-060D
/-20V
IC 4098
IGBT desaturation
SPM6G080-060D
4098
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ic 4099
Abstract: IGBT saturation fault 3 phase IGBT gate driver 3 phase IGBT gate driver 1200 4099 IGBT desaturation SPM6G080-120D 200 amp 120 V igbt
Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-120D
/-20V
ic 4099
IGBT saturation fault
3 phase IGBT gate driver
3 phase IGBT gate driver 1200
4099
IGBT desaturation
SPM6G080-120D
200 amp 120 V igbt
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-060D
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125oC
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LIN opto isolator
Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-120D
/-20V
LIN opto isolator
diode piv 800 50A
IGBT desaturation
SPM6G080-120D
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LIN opto isolator
Abstract: SPM6G080-060D IC 4098
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-060D
/-20V
LIN opto isolator
SPM6G080-060D
IC 4098
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SPM6G080-060D
Abstract: IC 4098 4098 Brake cleaner LIN opto isolator 210C
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-060D
/-20V
SPM6G080-060D
IC 4098
4098
Brake cleaner
LIN opto isolator
210C
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SPM6G120-120D
Abstract: 210C 3 pins Variable resistor 5K ohm
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA DATASHEET 4100, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
500uA,
SPM6G120-120D
210C
3 pins Variable resistor 5K ohm
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SPM6G140-060D
Abstract: C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977
Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA DATASHEET 4977, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-060D
500uA,
SPM6G140-060D
C 4977
IGBT DRIVER Analog Devices
Brake cleaner
210C
bi-directional switches IGBT
ON 4977
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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