TRANSISTOR SMD 58W
Abstract: smd transistor E21 PC-B2510-T1 TRANSISTOR SMD 58W 87 PC-B4317-L1 pc-b2510 PFc CIRCUIT ml4822 ZVS DRIVER P-44317-EC p-44317
Text: June 1996 Application Note 42032 ML4822 Power Factor Correction With Zero Voltage Resonant Switching INTRODUCTION The boost converter is a popular topology for improved power factor and reduced line harmonics, as specified in IEC 555-2 and other more recent standards. With this
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ML4822
TRANSISTOR SMD 58W
smd transistor E21
PC-B2510-T1
TRANSISTOR SMD 58W 87
PC-B4317-L1
pc-b2510
PFc CIRCUIT ml4822
ZVS DRIVER
P-44317-EC
p-44317
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LM2575-ADJ
Abstract: LM2575 step up converter diode 1N4001 specifications universal cell phone charger circuit diagram car battery charger circuit diagram 77458bv LM2575 diode u2 MC33341 trickle battery charger circuit based on zener an
Text: Order this document by AN1593/D AN1593 Low Cost 1.0 A Current Source For Battery Chargers Prepared by: Ondrej Pauk Industrial System Application Laboratory Roznov, CZ Figure 1. Low Cost Current Source for Battery Chargers Demonstration Board This paper describes two designs of low cost current
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AN1593/D
AN1593
LM2575
MC33341
LM2575-ADJ
LM2575 step up converter
diode 1N4001 specifications
universal cell phone charger circuit diagram
car battery charger circuit diagram
77458bv
diode u2
trickle battery charger circuit based on zener an
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1N4001 zener diode
Abstract: LM2575-ADJ Car Battery 12V pulse charger diode 1n5819 1N4001 general diode sample schematic diagram 12v battery charger LM2575 step up converter 12V DC to 19V dC converter schematic diagram schematic diagram 24V NiMh charge controller 12V cell phone charger circuit diagram
Text: Order this document by AN1593/D Motorola Semiconductor Application Note AN1593 High Efficiency 1A Battery Charger Using the LM2575-ADJ and MC33341 PRELIMINARY INFORMATION by Ondrej Pauk Industrial System Application Laboratory, Roznov CZ Figure 1. High Efficiency Battery Charger Demonstration Board.
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AN1593/D
AN1593
LM2575-ADJ
MC33341
MC33341
1N4001 zener diode
Car Battery 12V pulse charger
diode 1n5819
1N4001 general diode sample
schematic diagram 12v battery charger
LM2575 step up converter
12V DC to 19V dC converter schematic diagram
schematic diagram 24V NiMh charge controller
12V cell phone charger circuit diagram
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feme relais
Abstract: Rapa relay 12vdc Rapa Relais gruner RELAY 275 gruner RELAY haller Relays SDS Relais ZETTLER AZ haller relais feme relay
Text: Relay Coupler 58 Relay Coupler Contact material Properties Application Fine silver AG 99 % - inexpensive - average tendency to weld and average resistance to burn-off - subject to corrosion in sulphurous atmosphere - high mechanical stability - low tendency to weld
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Untitled
Abstract: No abstract text available
Text: CO M PL IA NT TISP61089BSD *R oH S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089BSD High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current
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TISP61089BSD
TSP0505
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TH3 thermistor
Abstract: thermal fuse GR-1089-CORE JESD51-2 TISP61089BSDR-S TRANSISTOR marking k2 dual K44 TRANSISTOR MARKING
Text: CO M PL IA NT TISP61089BSD *R oH S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089BSD High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current
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TISP61089BSD
TISP61089BSD
TSP0505
TH3 thermistor
thermal fuse
GR-1089-CORE
JESD51-2
TISP61089BSDR-S
TRANSISTOR marking k2 dual
K44 TRANSISTOR MARKING
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,
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30N50Q
32N50Q
32N50
125OC
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SKN-R 45
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH 32N48 IXFT 32N48 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 480 V = 32 A = 0.13 Ω têê ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 480 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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32N48
O-268
SKN-R 45
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QMV1006-1BF5
Abstract: automatic gain control qmv1006 AC03 automatic room power control circuit block diagram A0773971 AC01 lc ac03 QMV1 NORTEL laser lc
Text: AC03 Automatic Gain Control Amplifier Data Sheet Features Variable gain amplifier, -12.5 dB to +36 dB Single ended and differential mode of operation Single ended to differential converter Automatic gain control 50 ohm input and output impedances Generates the gain control voltage
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SHINDENGEN 221
Abstract: SHINDENGEN DIODE
Text: K ' > 3 7 Schottky Barrier Diode Axial Diode • ^ ^ a O a OUTLINE DIMENSIONS D1NS6 60V 1A & • T ¡ 1 5 0 t: •Phhsm T’/ O V v i S H • 5mm\¿"j ffl i * •S F W 3 5 •DC/DC □VA-i? • * S . 7 -L>. 0A*|g • a « . /-K -^ M Ä ä s RATINGS Item ii
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: I? ÏE x V W 7. Surface Mounting Device '> 3 K y 7 Schottky Barrier Diode 1 Twin Diode OUTLINE DIMENSIONS DF15SC4M 40 V 15A 111! •S M D • T j 15 0 t ; • P rrsm •S R « ® •D C /D C Z iy lK -9 • * * . y - A . O A«ä§ •a«. RATINGS • ÎÊ fc flS ^ îÈ fê
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DF15SC4M
SHINDENGEN DIODE
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: y3y K y^ om Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S20SC9M 90V 20A • T j 15 C ÎC • P rrsm • S jc ÎjV J y ÿ L ^ mxniïtmm • SRW S • D C / D C H V A '- i? mmm. v -u . o a * ü • s u . iï-v-jii’im RATINGS • Î ë Î 'j s i ^ ü È t ë
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S20SC9M
SHINDENGEN DIODE
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: 7. i j. .» i i —i u y _i_ i S u r f a c e Mounting Device y a - y *f*s S ch o ttk y Barrier Diode single Diode • flW ä E I OUTLINE DIMENSIONS DE5S6M 60V 5A •S M D • T j 15 0 t : •P hhsm m if. •S F W • D C /D C □ V A - Î ' • * s . y -A .
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50Holtage
SHINDENGEN DIODE
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R10M
Abstract: ST2038
Text: E O PHOTOTRANSISTOR OPTOCOUPLERS g p ïm m a n ic s H24À1 H24A2 .50 REF The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing compatible with a dual in-line package.
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H24A2
E51868
ST2038
ST2039
R10M
ST2038
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s0320
Abstract: 345C 335C
Text: T2 UNITRODE CORP 9347963 dF U N I T RO DE C O R P | ^347^3 92D 00110b3 1 1063 D DUAL POWER SCHOTTKY RECTIFIERS HigH§gr'” ' 60A Pkr 45V USD345C USD320CHR USD335CHR USD345CHR FEATURES • Very Low Forward Voltage • Low R e co ve re d C h a rge • R u g g e d P a c k a g e D e sig n T O -3
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00110b3
USD345C
USD320CHR
USD335CHR
USD345CHR
335CHR,
345CHR.
MIL-STD-750
MIL-S-19500/553
s0320
345C
335C
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620CT
Abstract: 615CT IEC134 KHR605CT PHR605CT M801
Text: N AMER PHILIPS/DISCRETE QbE D ^ 5 3 1 3 1 ODllbhS S PHR605CT S E R IE S r - 0 ,3 - <7 V E R Y FAST R E C O V E R Y D O U BLE R EC T IFIER D IO D E S Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes which feature low forward voltage drop, very fast reverse recovery times and 'non-snap-off'. They are intended for use in
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PKR605CT
615CT
PHR605CT
620CT
615CT
IEC134
KHR605CT
M801
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TRANSISTOR ED203
Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the
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1N2175
TRANSISTOR ED203
FND10
MAN-3A
2N3980
LA 4301
do ic 4532A free
germanium
Germanium drift transistor
texas instruments LED Display TIL
epitaxial mesa
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1 henry INDUCTOR
Abstract: handsfree phone MC34018 1n4004 motorola diode DIODE 1N4004 mic mc34018 AN957 1N4004S N4O04 MC34011A MC34018 equivalent
Text: MOTOROLA SEMICONDUCTOR ^ APPLICATION NOTE A N957 In terfacin g The S peakerphone To The M C 3 4 0 1 0 /1 1 /1 3 Speech N etw o rks Prepared by Dennis Morgan Bipolar Analog IC Division IN TR O D U C TIO N Interfacing the MC34018 speakerphone circuit to the
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MC34018
MC34010
MC34010,
MC34011,
MC34013,
AN957
1 henry INDUCTOR
handsfree phone MC34018
1n4004 motorola diode
DIODE 1N4004 mic
AN957
1N4004S
N4O04
MC34011A
MC34018 equivalent
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irf5205
Abstract: IRF520 IRF521 IRF523 IRF522
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF520
IRF521
IRF522
IRF523
IRF520,
IRF522,
irf5205
IRF523
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MC33341
Abstract: No abstract text available
Text: Order this document by MC33341/D M MOTOROLA - MC33341 Advance Information Power Supply B attery Charger Regulation Control C ircuit The MC33341 is a monolithic regulation control circuit that is specifically designed to close the voltage and current feedback loops in power supply
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MC33341/D
MC33341
MC33341
C33341/D
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Kvp 26A
Abstract: kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER
Text: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
Kvp 26A
kvp 3a
kvp 42 DIODE
kvp 34 DIODE
100-200KV
kvp diode
kvp 68A
hv rectifiers diode
kvp 26 DIODE
8ph ZENER
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edi minibridge pb20
Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
Text: electronic devices, inc. Short Form Catalog 90 silicon bridge rectifiers low & hv diodes stock & custom hv assemblies ELECTRONIC DEVICES, INC. • 21 GRAY OAKS AVE., YONKERS, NY 10710 • 914-965-4400 • 800-678-0828 • FAX 914-965-5531 • TELEX 681-8047
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kvp smd
Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
kvp smd
kvp 42 DIODE
kvp 26A M
kvp diode
2005C
1.5 khp
SMD kvp
XMR5
0709a
PKF SMD
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kvp 42 DIODE
Abstract: kvp 68A kvp diode kvp 34 DIODE kvp 30 DIODE kvp 88 diode kvp 23A Kvp 26A kvp 26 DIODE 100-200KV
Text: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
kvp 42 DIODE
kvp 68A
kvp diode
kvp 34 DIODE
kvp 30 DIODE
kvp 88 diode
kvp 23A
Kvp 26A
kvp 26 DIODE
100-200KV
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