FP15R12KE3
Abstract: FP15R12KE3 datasheet
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FP15R12KE3
FP15R12KE3
FP15R12KE3 datasheet
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FP15R12KE3
Abstract: FP15R12KE3 datasheet
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FP15R12KE3
FP15R12KE3
FP15R12KE3 datasheet
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BMU10-940-02-R
Abstract: BMU10-975-02-R BMU10-915-02-R 10w laser diode 960nM 975nm 915nm bookham diode
Text: Data Sheet 10W 9xxnm Uncooled Multimode Laser Diode Module BMU10-9xx-02-R The Bookham BMU10-9xx-02-R multimode laser diode module series has been designed to provide the high power and reliability required for pumping next generation solid-state and fiber lasers, and for direct applications. The module includes a
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BMU10-9xx-02-R
BMU10-9xx-02-R
60825-Edition
1070nm
21CFR
BH13933
BMU10-940-02-R
BMU10-975-02-R
BMU10-915-02-R
10w laser diode
960nM
975nm
915nm
bookham diode
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Untitled
Abstract: No abstract text available
Text: MA4P506-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.3 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.1.0p Carrier Lifetime (S)3.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)
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MA4P506-1072
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Untitled
Abstract: No abstract text available
Text: MA4P504-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.6 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.0.5p Carrier Lifetime (S)1.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)
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MA4P504-1072
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Untitled
Abstract: No abstract text available
Text: MA4P505-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.45 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.0.6p Carrier Lifetime (S)2.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)
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MA4P505-1072
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Untitled
Abstract: No abstract text available
Text: ND412235 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com POW-R-BLOKTM Dual Diode Isolated Module Up to 350 Amperes & 2200 Volts Description: OUTLINE DRAWING Powerex Dual Diode Modules are designed for use in applications
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ND412235
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Untitled
Abstract: No abstract text available
Text: LD81_45 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com POW-R-BLOKTM Dual Diode Isolated Module 450 Amperes / Up to 4000 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated
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LD814045
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MONOLITHIC DIODE matrices
Abstract: HM1-051 diode matrix hm1 Diode S4 55a HM9-050 harris diode HM9-081 diode matrix diode matrix harris HM-030
Text: CIE1 HM-010/030/040/050/ 074/080/090 HARRIS SEM IC O N D U C TO R A D IV ISIO N O F H A R R IS C O R P O R A T IO N MIL Temperature Diode Matrices Harris M o n olithic Diode Matrices consist o f arrays o f passivated silicon diodes, fabricated in dielectrically
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HM-010/030/040/050/
Me-18
MONOLITHIC DIODE matrices
HM1-051
diode matrix hm1
Diode S4 55a
HM9-050
harris diode
HM9-081
diode matrix
diode matrix harris
HM-030
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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a 1201 sanyo
Abstract: TIC 2060 tic 1068 A 3202 DIODE um 3567 diode e 2060 TIC 2060 D
Text: Ordering number : EN698C I SArnYO SVC202,202SPA No.6980 Diffused Junction Type Silicon Diode i Varactor Diode IOCAP for FM Receiver Electronic Tuning F e a tu r e s • Twin type FM electronic tuning-use varactor diode which excels in large input characteristics.
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EN698C
SVC202
202SPA
a 1201 sanyo
TIC 2060
tic 1068
A 3202 DIODE
um 3567
diode e 2060
TIC 2060 D
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l7949
Abstract: HP STEP RECOVERY DIODES
Text: Xhfíl PACKARD APPLICATION NOTE 989 Step Recovery Diode Doubler INTRODUCTION A straightforw ard technique fo r m ultip lie r design is pres ented. The in p u t c irc u it is a low pass filte r w hich allows all of the in pu t pow er to be absorbed by the diode and reflects
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D-7030
l7949
HP STEP RECOVERY DIODES
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varactor diode notes
Abstract: varactor diode high frequency x band varactor diode "Varactor Diode" CAY10 Parametric Varactor diodes
Text: GALLIUM ARSENIDE VARACTOR DIODE 125 150 Tstud CO CAYIO TOTAL DISSIPATION PLOTTED AGAINST STUD TEMPERATURE ffr. tm r e ì CAYIO Page C I GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in
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CAY10
varactor diode notes
varactor diode high frequency
x band varactor diode
"Varactor Diode"
Parametric Varactor diodes
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Untitled
Abstract: No abstract text available
Text: TM C e n tra l CLL4729A THRU CLL4764A Sem 1.0W ZENER DIODE 5% TOLERANCE ic o n d u c to rC o rp . DESCRIPTION: The CEN TRAL S EM IC O N DU CTO R C LL4729A Series Silicon Zener Diode is a high quality voltage regulator fo r use in surface m ount industrial,
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CLL4729A
CLL4764A
LL4729A
MAXI58A
L4759A
L4760A
CLL4761
L4762A
L4763A
L4764A
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser
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LG1625AXF
DS99-187HSPL
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Untitled
Abstract: No abstract text available
Text: Central" CLL4729A THRU CLL4764A S e m ic o n d u c to r C o rp . 1.0W ZENER DIODE 5% TOLERANCE DESCRIPTION: The CEN TRAL S EM IC O N DU CTO R C LL4729A Series Silicon Zener Diode is a high quality voltage regulator for use in surface m ount industrial, c o m m e rc ia l, e n te r ta in m e n t and c o m p u te r
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CLL4729A
CLL4764A
LL4729A
CLL4730A
CLL4731A
CLL4732A
CLL4733A
CLL4734A
CLL4735A
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5516 DIODE
Abstract: No abstract text available
Text: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm
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mcc 55-12
Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Text: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm
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T-25-23
TVJ-450C
K21-0120
K21-0180
K21-0265
K41-0150
mcc 55-12
mcc 40-12
MCC 65-16
ABB mcc
mcc 65-12
MCC 55-08
mcc 55-16
MCC 40 -14io8
ABB mcc 40-12
MCC 40 -12io8
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Untitled
Abstract: No abstract text available
Text: BAS85 Cathode Mark Silicon S chottky B a rrie r Diode for general purpose applications. This diode features low turn-on voltage. The devices are pro tected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. 0 .38*01
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BAS85
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C16P20F
Abstract: C16P20FR C16P10FR T0247AC C16P10F
Text: FAST RECOVERY DIODE C16P10F C16P20F C16P10FR C16P20FR 17.7A/100— 200V/trr :35nsec FEATURES 5.3 209 4.7U85I , » Similar to T0-247AC (TO-3P) Case 15.91.626) . 3.6U42)r r ~ \S $ .ti S a y 3.4(.134) j 0 Dual Diodes - Cathode Common and Anode Common (Type - R )
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A/100â
00V/trr
35nsec
C16P10F
C16P20F
C16P10FR
C16P20FR
T0-247AC
C16P10F
C16P20FR
T0247AC
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IRKTF 41
Abstract: No abstract text available
Text: I , . I Bulletin 127103 rev. A 09/97 International I R Rectifier IRK.F82. SERIES FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • Fast turn-oft thyristor 81 A ■ Fast recovery diode ■ High surge capability ■ Electrically isolated baseplate
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0D3G137
003013a
IRKTF 41
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ITT DIODE
Abstract: ITT DIODE 125 BB721 DDD317T DIODE ITT 21 itt diode
Text: ITT S E M I C O N D / I N T E R M E T A L L blE » • 4hfl2711 D D D 3 1 7 T bHfi M I S I BB721 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation fo r tuning the whole range of UHF television bands. Two BB 721 in series are used for direct satellite receiving.
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DDD317T
BB721
4bfl2711
DDD31Ã
4ba27U
ITT DIODE
ITT DIODE 125
BB721
DIODE ITT 21
itt diode
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JANTX1N5719
Abstract: Diode LT 443 1N5719 1N5719 JAN 1N5719 JANTX
Text: HEWLETT g PIN SWITCHING DIODE MILITARY APPROVED MIL-S-19500/443 PACK ARD COMPONENTS JAN 1N5719 JANTX1N5719 Features PRODUCTS LARGE DYNAMIC RANGE LOW HARMONIC DISTORTION Maximum Ratings at The JAN Series 1N5719 is a planar passivated silicon PIN diode designed fo r use in RF sw itching circuits. These
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MIL-S-19500/443
1N5719
JANTX1N5719
MlL-S-19500/443)
1071E
lo-70mAdc,
70mAdc,
-120V
MIL-STD-202,
JANTX1N5719
Diode LT 443
1N5719 JAN
1N5719 JANTX
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