35-16A
Abstract: 35-12a 3508a diode avalanche DSA IXYS DSA 3516A
Text: DS 35 DSA 35 VRRM = 800-1800 V IF RMS = 80 A IF(AV)M = 49 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800
|
Original
|
DO-203
5-08A
5-12A
5-16A
5-18A
35-16A
35-12a
3508a
diode avalanche DSA
IXYS DSA
3516A
|
PDF
|
STPR120A
Abstract: No abstract text available
Text: STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 200 V trr (max) 35 ns FEATURES AND BENEFITS VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE FAST RECTIFIER EPITAXIAL DIODE SMA DESCRIPTION Single chip rectifier suited to Switched Mode
|
Original
|
STPR120A
STPR120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 200 V trr (max) 35 ns FEATURES AND BENEFITS VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE FAST RECTIFIER EPITAXIAL DIODE SMA DESCRIPTION Single chip rectifier suited to Switched Mode
|
Original
|
STPR120A
|
PDF
|
TSM 1220
Abstract: MDS50
Text: MDS50 DIODE / THYRISTOR MODULE . . FEATURES VDRM = VRRM UP TO 1200 V IT AV = 35 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) A G I DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for
|
Original
|
MDS50
MDS50
TSM 1220
|
PDF
|
STPR120A
Abstract: No abstract text available
Text: STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 200 V trr (max) 35 ns FEATURES AND BENEFITS n n n n VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE FAST RECTIFIER EPITAXIAL DIODE SMA DESCRIPTION
|
Original
|
STPR120A
STPR120A
|
PDF
|
BRIDGE-RECTIFIER 12v 1A
Abstract: BRIDGE-RECTIFIER 12v 5A TSM 1220 BRIDGE-RECTIFIER 5v 1A MDS50 thyristor 12V it 1A
Text: MDS50 DIODE / THYRISTOR MODULE . . FEATURES VDRM = VRRM UP TO 1200 V IT AV = 35 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) A G I DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for
|
Original
|
MDS50
MDS50
BRIDGE-RECTIFIER 12v 1A
BRIDGE-RECTIFIER 12v 5A
TSM 1220
BRIDGE-RECTIFIER 5v 1A
thyristor 12V it 1A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.64 V Power Schottky Rectifier dual diode Preliminary Data VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings
|
Original
|
35-008AR
247TM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.64 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5
|
Original
|
35-008AR
247TM
|
PDF
|
35-008AR
Abstract: No abstract text available
Text: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.68 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5
|
Original
|
35-008AR
247TM
35-008AR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.68 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5
|
Original
|
35-008AR
247TM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FFPF15S60S 15 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
FFPF15S60S
FFPF15S60S
|
PDF
|
BYW98-200
Abstract: BYW98-200RL
Text: BYW98-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 35 ns FEATURES AND BENEFITS • ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times
|
Original
|
BYW98-200
DO-201AD
BYW98-200
BYW98-200RL
|
PDF
|
BYW98
Abstract: No abstract text available
Text: BYW98-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 35 ns FEATURES AND BENEFITS • ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times
|
Original
|
BYW98-200
DO-201AD
BYW98
|
PDF
|
MBR4035PT
Abstract: MBR4045PT
Text: MBR4035PT SERIES SCHOTTKY BARRIER RECTIFIER DIODE TO-247AD TO- 3P PRV : 35~45 Volts Io : 40 Amperes 0.645 (16.4) 0.245(6.2) 0.225(5.7) 0.625 (15.9) FEATURES : * * * * 0.078 REF (1.98) 0.170(4.3) High current capability Low power loss, high efficiency High surge capacity
|
Original
|
MBR4035PT
O-247AD
O-247AD
MBR4045PT
|
PDF
|
|
|
100 Amp current 1000 volt diode
Abstract: 1000 Amp current diode 100 Amp current 500 volt diode 200 Amp current 1000 volt diode MD550 50 Amp current 100 volt diode MDL25800 md356 5701 diode MD358
Text: MD/MDL 25000C/A Series - 25 Amp MD/MDL 35000C/A Series - 35 Amp MD/MDL 50000C/A Series - 50 Amp Rectifier Automotive Diode Data Sheet Coloured ring denotes cathode Features Oxide Passivated EPI Die Low Forward Voltage Low Leakage High Temperature Solder Compatible
|
Original
|
25000C/A
35000C/A
50000C/A
MD25050/MDL25050
MD25600/MDL25600
MD25800/MDL25800
SCD0729-1
100 Amp current 1000 volt diode
1000 Amp current diode
100 Amp current 500 volt diode
200 Amp current 1000 volt diode
MD550
50 Amp current 100 volt diode
MDL25800
md356
5701 diode
MD358
|
PDF
|
DIODE BYW98
Abstract: diode ed 4c BYW98-200 BYW98-200RL
Text: BYW98-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 35 ns c u d FEATURES AND BENEFITS • ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times
|
Original
|
BYW98-200
DO-201AD
DIODE BYW98
diode ed 4c
BYW98-200
BYW98-200RL
|
PDF
|
3 phase UPS
Abstract: mosfet 5
Text: Advanced Technical Information VUM 25-05 VDSS = 500 V ID25 = 35 A RDS on = 0.12 W Rectifier Module for Three Phase Power Factor Correction Using fast recovery epitaxial diodes and MOSFET 1 5 1 VRRM (Diode) VDSS V V Type 500 3 6 5 600 2 VUM 25-05E 9 2 10 9
|
Original
|
25-05E
3 phase UPS
mosfet 5
|
PDF
|
UV diode 254 nm
Abstract: ixys 047 MD1000
Text: □IXYS Advanced Technical Data Power Schottky Rectifier V RSM V RRM V 2X10A VRRM = 35 - 45 V •n Type I ►I T M TO-220 AB V 35 45 35 45 Symbol U DSSK 20 Uv = DSSK 20-0035B S DSSK 20-0045B(S) Test Conditions Maximum Ratings (per diode) rms Uav Uav Tc = 135°C; rectangular, d = 0.5
|
OCR Scan
|
2X10A
O-220
20-0035B
20-0045B
D-68623
UV diode 254 nm
ixys 047
MD1000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier DSSK 28 U = 2 x 14 a VRRM = 35 - 45 V Preliminary data V RSM V RRM V I Type ►I I H TO-220 A B V 35 45 35 45 Symbol DSSK 28-0035A DSSK 28-0045A Test Conditions A Maximum Ratings per diode ^FAV Tc = 156°C; rectangular, d = 0.5
|
OCR Scan
|
O-220
8-0035A
8-0045A
|
PDF
|
26MB100B
Abstract: 26MB60B
Text: EbE D INTERNATIONAL RECTIFIER 4Ô55452 001D731 5 • International IxorI Rectifier Power Modules Single phase diode bridges, 10 to 35 AMPS Part Number U. S. S eries 100JBÖ5L 100JB1L 100JB2L 100JB4L 100JB6L 100JB8L: 100JB10L 100JB12U 26MB05B 26MB10B 26MB20B
|
OCR Scan
|
001D731
100JBÃ
100JB1L
100JB2L
100JB4L
100JB6L
100JB8L:
100JB10L
100JB12U
26MB05B
26MB100B
26MB60B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier DSS 16 W = 16 A V RRM = 35 - 45 V TO-220 AC Preliminary data TO-263 S-Type Type RRM V 35 45 35 45 DSS 16-0035A(S) DSS 16-0045A(S) Symbol Test Conditions ^FRMS "^VJ ^FAV Tc = 152°C; rectangular, d = 0.5 ^FSM tp = 10m s Maximum Ratings (per diode)
|
OCR Scan
|
O-220
O-263
6-0035A
6-0045A
|
PDF
|
LT 0216 diode
Abstract: 20/LT 0216 diode Diode LT 410
Text: SGS-THOMSON ;[Li MM D(S MDS50 DIODE / THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ lT(AV) = 35 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for
|
OCR Scan
|
MDS50
MDS50
LT 0216 diode
20/LT 0216 diode
Diode LT 410
|
PDF
|
7z66b
Abstract: BAX18 diode td3 general purpose diode
Text: b'iE D N AMER PHILIPS/DISCRETE • tbSa'lBl □□2b372 2 m IAPX BAX18 GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope prim arily intended fo r rectifier applications Q UICK REFERENCE D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage
|
OCR Scan
|
2b372
BAX18
DO-35
OD-27
DO-35)
7z66b63
bb53131
0D2b37?
7z66b
BAX18
diode td3
general purpose diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: n ix Y S _ Power Schottky Rectifier DSS 2x81 lFAV = 2x79 A V rrm = 3 5 - 4 5 mini BLOC, SOT-227 B Preliminary data V RSM V 35 45 35 45 w\ Type V rrm V 01 M PI 10 1 1 0n • DSS 2x81-0035A DSS 2x81 -0045A Symbol Test Conditions ^FRMS T "v j Maximum Ratings per diode
|
OCR Scan
|
OT-227
2x81-0035A
-0045A
|
PDF
|
