IRF1010EL
Abstract: ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES
Text: PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.012Ω G ID = 83A
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IRF1010ES/L
IRF1010ES)
IRF1010EL)
IRF1010EL
ISD 1720
mosfet k 61 y1
AN-994
IRF1010E
IRF1010ES
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FB180SA10
Abstract: 4.5V TO 100V INPUT REGULATOR
Text: PD 9.1651B FB180SA10 HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V
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1651B
FB180SA10
OT-227
FB180SA10
4.5V TO 100V INPUT REGULATOR
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CI 4490
Abstract: AN-1005 irf1324pbf
Text: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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6199A
IRF1324PbF
O-220AB
O-220AB
CI 4490
AN-1005
irf1324pbf
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Untitled
Abstract: No abstract text available
Text: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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6199A
IRF1324PbF
O-220AB
O-220AB
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FB180SA10
Abstract: 4.5V TO 100V INPUT REGULATOR
Text: PD- 91651C FB180SA10 HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V
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91651C
FB180SA10
OT-227
connectio10)
FB180SA10
4.5V TO 100V INPUT REGULATOR
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IRF1324
Abstract: No abstract text available
Text: PD - 96199 IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRF1324PbF
O-220AB
IRF1324
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irf 450a
Abstract: IRF1324SPBF 97353A AN-994
Text: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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7353A
IRF1324SPbF
IRF1324LPbF
O-262
EIA-418.
irf 450a
IRF1324SPBF
97353A
AN-994
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IRF132
Abstract: IRF1324SPBF
Text: PD - 97353 IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRF1324SPbF
IRF1324LPbF
340Ac
O-262
IRF1324SPbF
Para90
EIA-418.
IRF132
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Untitled
Abstract: No abstract text available
Text: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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7353A
IRF1324SPbF
IRF1324LPbF
O-262
EIA-418.
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4460 MOSFET
Abstract: IRFB4321PbF AN-1005
Text: PD - 97103A IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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7103A
IRFB4321PbF
O-220AB
O-220AB
4460 MOSFET
IRFB4321PbF
AN-1005
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Untitled
Abstract: No abstract text available
Text: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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IRFB4321GPbF
O-220AB
Y2A68UPS`
O-220AB
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irfb4321
Abstract: IRFB4321PBF 4460 MOSFET AN-1005 83ca
Text: PD - 97103 IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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IRFB4321PbF
O-220AB
IRF1010
O-220AB
irfb4321
IRFB4321PBF
4460 MOSFET
AN-1005
83ca
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IRFB4321PBF
Abstract: No abstract text available
Text: PD - 97103 IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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IRFB4321PbF
O-220AB
O-220AB
IRFB4321PBF
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irfb4321
Abstract: 4460 MOSFET AN-1005
Text: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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IRFB4321GPbF
O-220AB
Y2A68UPS`
O-220AB
irfb4321
4460 MOSFET
AN-1005
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FB180SA10
Abstract: 90028 diode SR 310 4.5V TO 100V INPUT REGULATOR
Text: PD- 91651C FB180SA10 HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V
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91651C
FB180SA10
OT-227
12-Mar-07
FB180SA10
90028
diode SR 310
4.5V TO 100V INPUT REGULATOR
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4460 MOSFET
Abstract: AN-1005
Text: PD - 97105A IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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7105A
IRFS4321PbF
IRFSL4321PbF
O-262
IRFS4321PbF
EIA-418.
4460 MOSFET
AN-1005
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AN-1005
Abstract: No abstract text available
Text: PD - 97105 IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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IRFS4321PbF
IRFSL4321PbF
O-262
IRFS4321PbF
EIA-418.
AN-1005
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irfs4321pbf
Abstract: 4460 MOSFET AN-1005 IRFS432
Text: PD - 97105A IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching
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7105A
IRFS4321PbF
IRFSL4321PbF
O-262
IRFS4321PbF
EIA-418.
4460 MOSFET
AN-1005
IRFS432
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auirf1324
Abstract: 97482
Text: PD - 97482 AUIRF1324 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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AUIRF1324
auirf1324
97482
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Untitled
Abstract: No abstract text available
Text: PD - 97482 AUIRF1324 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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AUIRF1324
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SUU50N025-05P
Abstract: ic MARKING QG TB-17
Text: SUU50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS
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SUU50N025-05P
O-251
SUU50N025-05P--E3
S-50931--Rev.
09-May-05
SUU50N025-05P
ic MARKING QG
TB-17
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AUIRF1324
Abstract: AN-994 marking h3a auirf1324s 97483
Text: PD - 97483 AUIRF1324S AUIRF1324L AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRF1324S
AUIRF1324L
AUIRF1324
AN-994
marking h3a
auirf1324s
97483
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Untitled
Abstract: No abstract text available
Text: PD - 97483 AUIRF1324S AUIRF1324L AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRF1324S
AUIRF1324L
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ic MARKING QG
Abstract: TB-17 SUR50N025-05P
Text: SUR50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS
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SUR50N025-05P
O-252
SUR50N025-05P--E3
SUR50N025-05P-T4--E3
s-50933--Rev.
09-May-05
ic MARKING QG
TB-17
SUR50N025-05P
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