FS15R06VE3_B2
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS15R06VE3_B2 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 600
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FS15R06VE3
FS15R06VE3_B2
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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fs20r06ve3
Abstract: fs20r06ve3_b2
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS20R06VE3_B2 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 600
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FS20R06VE3
fs20r06ve3_b2
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Untitled
Abstract: No abstract text available
Text: SKKD 205F, SKND 205F THYRISTOR BRIDGE,SCR,BRIDGE $F>< $FF< CGF<> I JKK B L63M5616 -301% * & ,)2+521)1 );%&3+5)2N $ $ CGB$ I OPK B L(52Q RSPT KP 8UT V, I SW XAN YPP YPP Symbol Conditions CGB$ (52Q RSPT V, I SW XA CG>< V-¥ I OK XAT RP 6( 6( V-¥ I RKP XAT RP 6( 6(
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L63M5616
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702 mosfet smd marking
Abstract: 7022D IRLMS1503 703Y smd diode ED 46 Lm 304 PN
Text: Previous Datasheet Index Next Data Sheet PD 9.1508 IRLMS1503 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET D D G A D 1 6 2 5 D 3 4 S Description Fifth Generation HEXFETs from International Rectifier
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IRLMS1503
IA-481
EIA-54
702 mosfet smd marking
7022D
IRLMS1503
703Y
smd diode ED 46
Lm 304 PN
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 380 mAmps, 60 Volts L2N7002KLT1G S-L2N7002KLT1G N–Channel SOT–23 3 Features • • • • • • ESD Protected Low RDS on Surface Mount Package This is a Pb−Free Device 1 2 We declare that the material of product are Halogen Free and
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L2N7002KLT1G
S-L2N7002KLT1G
AEC-Q101
236AB)
OT-23
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Matsua RK1-6V
Abstract: matsua RK1
Text: 1.5 GHz MICROWAVE RELAY 20.2 .795 RK RELAYS • Excellent high frequency characteristics Isolation: Min. 60dB at 1.5 GHz Insertion loss: Max. 0.3dB (at 900 MHz) • V.S.W.R.: Max. 1.5 (at 900MHz) • High sensitivity in small size Size: 20.2 x 11.2 × 9.7 mm .795 × .441 × .382 inch
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900MHz)
HP4328A)
RK1-12V;
Matsua RK1-6V
matsua RK1
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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O-220F
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
UX-F5B
UX-F5B diode
RG-2A Diode
shv-30j
FMQ2FU
axial package
fmp2fur
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IRLMS6702
Abstract: Diode SMD ED 98 RK 73 SMD smd diode marking mp 22AV
Text: Previous Datasheet Index Next Data Sheet PD 9.1414 IRLMS6702 PRELIMINARY HEXFET Power MOSFET Generation 5 Technology ● Micro6 Package Style ● Ultra Low Rds on ● P-Channel MOSFET Description ● A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to
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IRLMS6702
IRLMS6702
Diode SMD ED 98
RK 73 SMD
smd diode marking mp
22AV
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RK1-24V
Abstract: mitsubishi pin out plc to pc interface RK1R-6V RK1R-5V RK1R-L-24V RK1R-L-12V CATVs RK1-12V RK1-L12V RK1-L2-12V
Text: RK RK-RELAYS HIGH FREQUENCY RELAY 20.2 .795 11.2 .441 • Excellent high frequency characteristics Isolation: 60 dB or more at 1.5 GHz Insertion loss: 0.3 dB or less (at 900 MHz) • High sensitivity in small size Size: 20.2 x 11.2 × 9.7 mm .795 × .441 × .382 inch
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6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and
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ET-T981
600-milliampere
6bv8
diode 12-55 c
capacitor RGF
general electric
RK 1900
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12AT6
Abstract: 6at6 6AT6-12AT6 12at6 diagram 6at6 tube T1447 tube 12AT6 12at6 tube ga 39 diode general electric
Text: 6AT6 12AT6 ET-T1447 Page 1 6AT6-12AT6 2-57 DUPLEX-DIODE TRIODE TUBES DESCRIPTION AND RATING The 6AT6 is a miniature, duplex-diode, high-mu triode designed for use as a combined detector, amplifier, and automatic-volume-control tube. Except for heater ratings, the 12AT6 is identical to the 6AT6.
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6AT6-12AT6
12AT6
ET-T1447
6at6
6AT6-12AT6
12at6 diagram
6at6 tube
T1447
tube 12AT6
12at6 tube
ga 39 diode
general electric
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12AV6
Abstract: 6AV6 6AV6 tube 12av6 tube t814 tube 6AV6 6s3 tube ET-T924 t924 12av6, tube
Text: 6AV6 3AV6 12AV6 6AV6 - 3AV6 - 1 2AV6 ¿faß}* ET-T924 Page 1 DUPLEX-DIODE TRIODE 3-55 TUBES DESCRIPTION A N D RATING The 6AV6 is a miniature duplex-diode, high-mu triode intended primarily for use as a combined detector, amplifier, and automatic-volume-control tube
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12AV6
ET-T924
12AV6
6AV6
6AV6 tube
12av6 tube
t814
tube 6AV6
6s3 tube
ET-T924
t924
12av6, tube
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diagram 3 phase heater control
Abstract: diagram 3 phase heater 6cn7 reactance tube rs tube transistor+6cn
Text: 6 C N7 TUNOSOL D U P L E X - D IO D E T R IO D E M IN I A T U R E TYPE COATED UN I P O T E N T I A L CATHODE SE RI E S H EA TE R 6 . 3 + 0 . 6 VOLTS 3 0 0 MA. PARALLEL. 3 . 1 5 VOLTS 6 0 0 + 4 0 MA. AC OR DC ANY MOUNTING P O S I T I O N CONTROL OF A P P L I E S ONLY
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triode FU 50
Abstract: triode FU 33 6aq7 6aq7gt 1 watt diode 5353A GI 8200 diode h 48 diode class t amplifier Tung-Sol 47
Text: TENTATIVE 6AQ7GT DATA /- TUNG'SOL DOUBLE D IO D E-TRIO D E COATED U N IP OT EN TIAL CATHODE HEATER 6 . 3 VOLTS 300 MA. AC OR DC ANY MOUNTING PO S ITIO N B O T T O M VIEW INTERMEDIATE SHELL 8 P I N OCTAL 8CK THE 6AQ7GT COMBINES TWO HIGH PERVEANCE D IO D ES AND A HIGH-MU TR IO DE WITH
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DIODE S2
Abstract: capacitor RGF GR10
Text: 6BV8 T E N T A T I V E DATA - TUNOSOl \ D U P LEX -D IO D E TR IO D E M IN I A T U R E T Y P E z" C OATED UN I P O T E N T I A L CATHODE MAX. I T-6^ H EAT ER ,1 5 16 MAX. 6 .3 ± 10% V O L T S 0 .6 AMP. AC OR DC 16 ,MAX. ANY MOUNTING P O S I T I O N
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19T8
Abstract: 19t8 tube 6T8-5T8-19T8 6T8 tube ET-T893 180J rs tube general electric
Text: |ftjb 6T8 5T8 19T8 6 T 8 -5 T 8 -1 9 T 8 ET-T893 TRIPLE-DIODE TRIODE Page 1 8-54 TUBES DESCRIPTION AND RATING1 The 6T8 is a m iniature triple-diode, high-mu triode intended primarily for use as a combined AM detector, F M detector, and audio-frequency voltage
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6T8-5T8-19T8
ET-T893
19T8
19t8 tube
6T8-5T8-19T8
6T8 tube
ET-T893
180J
rs tube
general electric
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5719 TRIODE
Abstract: 19T8 5718 TUBE UUA 180 Scans-0017330
Text: I9T8 TUNO-SOL T R I P L E - D I O D E TRIODE M IN IA T U R E V - 8 H C O A T E D UNI P O T E N T I A L T Y PE CATHODES MAX. ~T^_ |]5" HEATER 1 16 18.9 M AX. T-6^- VOLTS 0.15 AMP. AC OR DC 16 M AX. ANY M O U N T IN G P O S I T I O N u _ BOTTOM VIEW GLASS BULB
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pj 47 diode
Abstract: pj 54 diode pj 49 diode diode pj 33 diode S3 6T8 tube pj 34 diode pj 44 diode DIODE ED 34 pj 29 diode
Text: 6T 8 TUNG-SOL T R IP L E - D IO D E TRIODE MINIATURE TYPE ^ 8 ^ MAX COATED UNIPOTEN TIAL CATHODES : li5" 16 HEATER MAX. ; 6 . 3 VOLTS T' 6 y •16 450 MA. AC OR DC Jmax !. WUW GLASS ANY MOUNTING PO S ITIO N BU LB BOTTOM VI EW SMALL 9 BUTTON PIN BASE THE 6 T 8 CO M PRIS ES TH REE HIGH PERVEANCE D IO D E S AND A HIGH-MU TRIODE IN
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Untitled
Abstract: No abstract text available
Text: MARKTECH IN TE RN ATI ONAL 5799655 M A R K T E C H INTERNATIONAL ~fl7 DE I STTTbSS GODOIED Ô7D 00120 D M T P C 6 3 1 0 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR • DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR
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MTPC6310
300ft
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6fm8
Abstract: DIODE RK 69 rs tube general electric
Text: 6FM8 6FM8 ET-T1519 Page 1 2-59 f h 0 nic ^TUBES DUPLEX-DIODE TRIODE F0R DETECTOR A N D AF VOLTAGE-AMPLIFIER APPLICATIONS DESCRIPTION A N D RATING = T h e 6 F M 8 is a du p lex-d io d e, h ig h - m u trio d e w ith separate ca th o d e s fo r each o f the d io d e se ctio n s a n d the trio d e section. T h e tu b e is d e sign e d p r im a r ily fo r
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ET-T1519
6fm8
DIODE RK 69
rs tube
general electric
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Untitled
Abstract: No abstract text available
Text: 6X2Ü-E Æ .BOHHOH .a o jirO B e H H b lH AHOfl, L ong-life double diode Ü boôhoh a o jiro B e H H H H a h o j, 6X2Ü-E npe,HHa3- HaqeH .aJiH paôoTbi b KanecTBe AeTeKTopoB h MaJIOMOmHblX KeHOTpOHOB. flBOÔHbie ahoah 6X211-E BbinycKaiOTCH b mhHH3TIOpHOM 0 J 0pMJieHHH, B CTeKJIHHHOM Ô a jU IO H e
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6X211-E
b03-AeftcTBHK)
Harpy30K:
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12AV6
Abstract: 12AT6 12av6 tube I960 Scans-0017267 tube 12AT6
Text: TEN TATIVE DATA I2AV6 TUNG-SOL DOUBLE-DIODE TRIODE MINIATURE TYPE y COATED UN I POTENTIAL CATHODE _ 4 _ MAX T HEATER 7 T-5± B MAX. 1 2 .6 VOLTS 150 MA. AC OR DC 2 c— 8 MAX. ANY MOUNTING POSITION BOTTOM VIEW GLASS BULB M I N I A T U R E BUTTON 7 P I N BASE
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12AV6
M8-210
12AT6
12av6 tube
I960
Scans-0017267
tube 12AT6
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diode AR s1 39
Abstract: AA SMD MARKING SHINDENGEN DIODE diode smd marking AA 25
Text: Schottky Barrier Diode single Diode mnm M1FP3 o u t lin e Unit Imm Package ! M1F Weight 0.027« Typ * y —K -r— » C ath o d e m ark 30 V 1.29A |P 6 N Feature • /J v S iS M D • Small S M D • î2 V f= 0 .4 V • U ltra-Low V f= 0 .4 V I — W -
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