mmc 4011 E
Abstract: kdt 633 10Q18 photometer BV1010
Text: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure
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JAN1N57S5
JANTXlN3703
dIL-s-195m/467
EcOM14ENC3AT
mmc 4011 E
kdt 633
10Q18
photometer
BV1010
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g10 smd transistor
Abstract: SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S
Text: 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used
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20ETS.
Alu-163
CH-8152
g10 smd transistor
SMD marking DK ON
smd MARKING dk
S 1854
smd diode marking code ax
8150
marking g10
smd code diode 20a
SMD MARKING CODE 39
20ETS08S
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smd diode 708
Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
Text: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate
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20ETS.
CH-8152
smd diode 708
322 smd code
g10 smd transistor
smd code diode 20a
20ETS
20ETS08S
20ETS12S
20ETS16S
AN-994
SMD-220
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Untitled
Abstract: No abstract text available
Text: DAN 403 200 mW Small Signal Diode Arrays Dioden Sätze mit Allzweckdioden Nominal power dissipation Nenn-Verlustleistung 200 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 9 Pin-Plastic case 9 Pin-Kunststoffgehäuse 80 V 13 x 3.5 x 6.6 [mm]
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150/C
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Untitled
Abstract: No abstract text available
Text: DAN 403 200 mW Small Signal Diode Arrays Dioden Sätze mit Allzweckdioden Nominal power dissipation Nenn-Verlustleistung 200 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 9 Pin-Plastic case 9 Pin-Kunststoffgehäuse 80 V 13 x 3.5 x 6.6 [mm]
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150LC
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JAN 1N4500
Abstract: 1N4500
Text: COMPUTER DIODE JAN & JANTX 1N4500 500m A Switching Diode FEATU RES D ESCR IPTIO N • • • • • This device is a fast sw itching, high con ductance diode for military, space, high rel and other systems. M etallurgical Bond Qualified to MIL-S-19500/403
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500mA
1N4500
MIL-S-19500/403
DO-35
80Vdc
75Vpk
300mAdc
JAN 1N4500
1N4500
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JAN 1N4500
Abstract: No abstract text available
Text: COMPUTER DIODE 1N4500, JAN & JANTX 1N4500 500mA Switching Diode FEATURES DESCRIPTION • • • • T h is d evice ¡s a fast sw itching, high co n d u cta n ce diode for m ilitary, space, high rel and other systems. Metallurgical Bond Qualified to MIL-S-19500/403
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500mA
1N4500,
1N4500
MIL-S-19500/403
DO-35
80Vdc
75Vpk
300mAdc
20mAdc
300mAde
JAN 1N4500
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kc 2026
Abstract: 100 KC 1N995 1N995M mil-s-19500 color coding
Text: M IL-S-I9500/227 NAW j 16 AnrU 1062 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M 1. SCOPE 1.1 Scope. This specification covers the detail requirem ents for a germ anium switching diode and U in accordance with Specification M IL -S-19500. except as otherw ise specified herein.
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MIL-S-I9500/227
1N995M
MIL-S-19500,
1N995M
MIL-S-19500
kc 2026
100 KC
1N995
mil-s-19500 color coding
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • b b S S ^ l DD2b43fl T17 IAPX BB911 l VHF VARIABLE CAPACITANCE DIODE The BB911 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band A up to 160 MHz in all-band tuners.
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DD2b43fl
BB911
BB911
OD-68.
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D8L60
Abstract: No abstract text available
Text: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D8L60 600V 8A • h iîj ï • tr r 7 0 n s • 7 ,llÆ - ,lb K m m •P F C •SRSÎÜ •T V + B s RATINGS Absolute Maximum Ratings a a Operating Junction Temperature Average Rectified Forward Current
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D8L60
50HziE5g
50HzjE
J515-5
D8L60
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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DSA015
Abstract: No abstract text available
Text: Ordering number : EN1215C No.l215C / _ P S A015 Silicon Epitaxial Planar Type High-Speed Switching Diode F e a tu re s •Ideally suited for use in hybrid ICs because of very small-sized package • Fast switching speed
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EN1215C
l215C
DSA015
IF-100mA
DSA015
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B988
Abstract: SVC321 diode F48 G99G varactor diode AM 321SPA ci 4077 4043K CI 4037
Text: No.G99G SA \YO S V C 3 2 1 ,= i Diffused Ju n c tio n Type S ilicon Diode I V aractor Diode IOCAP for AM Receiver Electronic T uning J / / X X / ’ /' / / j 'e a t u re s T he SV C321, 321SPA a re v a ra c to r diodes w ith a good lin e a rity a rç d /iig h p p a c i ^ n c è r a ^ y l h a t is
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SVC321,
321SPA
Ta-25
f58-54
f48-99
SVC321
321SPA
B988
diode F48
G99G
varactor diode AM
ci 4077
4043K
CI 4037
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MC 4011 B
Abstract: 1N3207
Text: MIL SPECS I C | 0 0 G D 1 2 S DOOSSEb T |~~ INCH-POUND NOTICE OF VALIDATION MIL-S-19500/230C NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN - 1N3207 Military specification MIL-S-19500/230C, dated 12 February
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00GD12S
MIL-S-19500/23OC
1N3207
MIL-S-19500/230C,
MIL-S-19500.
MIL-S-19500
MC 4011 B
1N3207
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ic 4016
Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Text: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August
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0005S3M
MIL-S-19500/195D
1N3206
MIL-S-19500/195D,
QQ0012S
MIL-S-19500.
MIL-S-19500
1N4373
ic 4016
1N3206
DIODE PK IN 4001
MIL-STD-750 METHOD 2036
MIL-STD-750 METHOD 2036 CONDITION E
MIL-S-19491
D253S
IC 4011 details
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Untitled
Abstract: No abstract text available
Text: TLP591B GaAÔAs IRED a PHOTO-DIODE ARRAY T LP5 9 1 B Unit in mm TELEC O M M U N IC A TIO N P R O G R A M M A B L E CONTROLLERS M O S GATE DRIVER n3 n2 n1 M O S FET GATE DRIVER The TOSHIBA TLP591B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo
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TLP591B
TLP591B
UL1577,
E67439
100/is
1000pF
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IC 4011
Abstract: 1N4376 282-C diode rectifier 1n 4001 1N4376 JAN Scans-0016000
Text: MIL SP ECS MME D • 0 0 G 0 12 S GGanSD 5 ■MILS I I I INCH-POUND I I_ 1 MIL-S-19500/282C 23 June 1992 SUPERSEDING MIL-S-19500/282B 31 January 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N4376 JAN AND JANTX
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000012S
MIL-S-19500/282C
MIL-S-19500/282B
1N4376
MIL-S-19500.
GG001Z5
MIL-S-19500/282C
IC 4011
282-C
diode rectifier 1n 4001
1N4376 JAN
Scans-0016000
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VB025-16A02
Abstract: VB025-16N02 DIODE RECTIFIER BRIDGE VB025-12N02 VB025-06N02 16A02 E72873M VB025 GG01
Text: HbE D • t4 b ô b 2 5 b GG01S73 S MIXY I X Y S CORP □IXYS November 1991 Datasheet No. 911013A Single-Phase Diode Rectifier Bridge VB025 • Avalanche Rated Parts Available ■ Isolated Direct Copper Bond Base Plate
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GG01S73
E72873M)
11013A
VB025
VB025-04N02
VB025-06N02
VB025-08N02
VB025-10N02
VB025-12N02
VB025-14N02
VB025-16A02
VB025-16N02
DIODE RECTIFIER BRIDGE
16A02
E72873M
VB025
GG01
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IN3070
Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,
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MIL-S-19500/169H
MIL-S-19500/169G
1N3070,
1N3070-1,
1N3070UR-1,
1N49M,
1N493A-1,
1N4938UR-1
MIL-S-19500.
JANCA4938)
IN3070
1N493A
1N3070 JANTX
HA 4016
1N3070
1N3070-1
1N3070UR-1
DIODE EJL
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403A-03
Abstract: diode 1bl3 1BL3 1bl3 motorola
Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with
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MBRS130LT3/D
03A-03
403A-03
diode 1bl3
1BL3
1bl3 motorola
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minor project proposal on electronics
Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Text: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C
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GD13ttt.
MIL-S-19500/436
1N5461B
1N5476B
1N5461C
1N5476C
DDD012S
0D13bÃ
minor project proposal on electronics
436 diode
1N5466B JANTXV
diode LN 4001
1N5462C
1N5463C
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of IC 4511
Abstract: CI 4011 IC 4011 1N5186 1N5187 1N5188 1N5190 DIODE PK IN 4001 origin semiconductor rectifier Scans-0016000
Text: I^ lG O D D lS S MIL SPECS DDDl4G3fi 7 M IL-S-19500 '424 AMENDMENT 2 SUPERSEDING I AMENDMENT 1 16 January 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES TX AND NON-TX 1N5186, 1N5187, 1N5188, AND 1N5190
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G00D15S
MIL-S-19500
1N5186,
1N5187,
1N5188,
1N5190
MIL-S-19500/424,
G00D12S
MIL-S-19500/424
MIL-S-19500.
of IC 4511
CI 4011
IC 4011
1N5186
1N5187
1N5188
1N5190
DIODE PK IN 4001
origin semiconductor rectifier
Scans-0016000
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