Untitled
Abstract: No abstract text available
Text: HL1566AF 1.55 µm Laser Diode with EA Modulator Description The HL1566AF is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
HL1566AF:
48832Gbps
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HL1570AF
Abstract: LD 1610
Text: HL1570AF 1.6 µm Laser Diode with EA Modulator Under Development Description The HL1570AF is a 1.6 µm L-BAND InGaAsP distributed-feedback laser diode (DFB-LD) with a multiquantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode.
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HL1570AF
HL1570AF
LD 1610
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Hitachi DSA002726
Abstract: No abstract text available
Text: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a
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HL1553
HL1553
HL1553:
Hitachi DSA002726
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SM 4108
Abstract: NDL7620P NDL7620P1 NDL7620P1C NDL7620P1D NDL7620P2 NDL7620PC NDL7620PD STM-16
Text: DATA SHEET LASER DIODE NDL7620P Series 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NDL7620P Series is a 1 310 nm λ/4-phase-shifted DFB Distributed Feed-Back laser diode coaxial module
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NDL7620P
STM-16
SM 4108
NDL7620P1
NDL7620P1C
NDL7620P1D
NDL7620P2
NDL7620PC
NDL7620PD
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TOSA DWDM
Abstract: NX8531NH TEC TOSA
Text: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA
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NX8530NH
NX8531NH
NX8531NH
NX8530NH)
NX8531NH)
TOSA DWDM
TEC TOSA
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TOSA DWDM
Abstract: TEC TOSA transistor NEC D 587 PX10160E NX8530NH dwdm tosa
Text: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA
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NX8530NH
NX8531NH
NX8531NH
NX8530NH)
NX8531NH)
TOSA DWDM
TEC TOSA
transistor NEC D 587
PX10160E
dwdm tosa
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LA NX8563LAS
Text: DATA SHEET LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Single Mode
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NX8563LA
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8304CE-CC
NX8503BG-CC
NX8563LAS
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HL1569AF
Abstract: ld501 Hitachi DSA0047
Text: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1569AF
ADE-208-834A
HL1569AF
ld501
Hitachi DSA0047
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NX8563LA
Abstract: NX8563LAS PX10160E
Text: DATA SHEET LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Single Mode
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NX8563LA
NX8563LAS
PX10160E
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Ea 1530 A
Abstract: Hitachi DSA0087 HL1569AF
Text: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1569AF
ADE-208-834A
HL1569AF
HL1569AFollyer
Ea 1530 A
Hitachi DSA0087
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NDL7620P
Abstract: NDL7603P NDL7701P NX8330RA NX8330RA-BA NX8330RA-CA NX8501 NX8561JD STM-16 NEC RF MODULE
Text: PRELIMINARY DATA SHEET LASER DIODE NX8330RA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE MINI-DIL PIGTAILED MODULE FOR 2.5 Gb/s DESCRIPTION The NX8330RA is a 1 310 nm λ/4-phase-shifted DFB Distributed Feed-Back laser diode mini dual in-line (DIL)
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NX8330RA
NX8330RA
STM-16
NDL7620P
NDL7603P
NDL7701P
NX8330RA-BA
NX8330RA-CA
NX8501
NX8561JD
NEC RF MODULE
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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electroabsorption
Abstract: ld501 DFB ea HL1553 Hitachi DSA00230 2488-32
Text: HL1553 1.55 µm Laser Diode with EA Modulator ADE-208-395B Z 3rd Edition Dec. 2000 Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as
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HL1553
ADE-208-395B
HL1553
HL1553:
electroabsorption
ld501
DFB ea
Hitachi DSA00230
2488-32
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8300BE-CC,NX8300CE-CC 1 310 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX8300BE-CC and NX8300CE-CC are 1 310 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with an internal optical isolator.
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NX8300BE-CC
NX8300CE-CC
NX8300CE-CC
STM-16,
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s11154-01ct
Abstract: S9705
Text: Photo IC diode S11154-01CT Reduced color temperature errors The S11154-01CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the current
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S11154-01CT
S11154-01CT
SE-171
KPIN1076E08
S9705
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s11154-01ct
Abstract: No abstract text available
Text: Photo IC diode S11154-01CT Reduced color temperature errors The S11154-01CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the current
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S11154-01CT
S11154-01CT
SE-171
KPIN1076E06
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S11154-01CT
Abstract: S11252-01WT S9705 sensor S9705 S1125
Text: Photo IC diode S11154-01CT Reduced color temperature errors The S11154-01CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the current
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S11154-01CT
S11154-01CT
SE-171
KPIN1076E06
S11252-01WT
S9705 sensor
S9705
S1125
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10 gb laser diode
Abstract: Hitachi DSA0095 HL1513AF
Text: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1513AF
10Gb/s
ADE-208-1406
HL1513AF
HL1513AF:
10 gb laser diode
Hitachi DSA0095
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hitachi sr 2001
Abstract: HL1513AF LD501 10 gb laser diode Hitachi DSA0047
Text: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1513AF
10Gb/s
ADE-208-1406
HL1513AF
HL1513AF:
hitachi sr 2001
LD501
10 gb laser diode
Hitachi DSA0047
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smf80km
Abstract: Hitachi DSA00280
Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405A Z Rev.1 Feb. 2002 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1511AF
10Gb/s
ADE-208-1405A
HL1511AF
HL1511AF:
smf80km
Hitachi DSA00280
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hitachi sr 2001
Abstract: HL1511AF 10 gb laser diode Hitachi DSA0047
Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1511AF
10Gb/s
ADE-208-1405
HL1511AF
HL1511AF:
hitachi sr 2001
10 gb laser diode
Hitachi DSA0047
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10 gb laser diode
Abstract: Hitachi DSA0095 HL1511AF diode hitachi
Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1511AF
10Gb/s
ADE-208-1405
HL1511AF
HL1511AF:
10 gb laser diode
Hitachi DSA0095
diode hitachi
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hitachi sr 2001
Abstract: Hitachi DSA00280
Text: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406A Z Rev.1 Feb. 2002 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1513AF
10Gb/s
ADE-208-1406A
HL1513AF
HL1513AF:
hitachi sr 2001
Hitachi DSA00280
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Ea 1530 A
Abstract: ea 1530 HL1566AF laser diode 1550 nm Gbps laser diode 10 gbps laser diode 1550 nm 2.5 Gbps laser diode 1530 nm 2.5 Gbps 1550 communication laser diode
Text: HL1566AF 1.55 µm Laser Diode with EA Modulator Description The HL1566AF is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multiquantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems,
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HL1566AF
HL1566AF
Ea 1530 A
ea 1530
laser diode 1550 nm Gbps
laser diode 10 gbps
laser diode 1550 nm 2.5 Gbps
laser diode 1530 nm 2.5 Gbps
1550 communication laser diode
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