Untitled
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode switches - SPST SPST Electrical characteristics @ 25° C Model Direct Reverse Bias Bias S1B502 SRB502 S1D502 SRD502 S1B2004 SRB2004 S1D2004 SRD2004 S1B4008 SRB4008 S1D4008 SRD4008 Bias requirements: Direct bias: Frequency range
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S1B502
SRB502
S1D502
SRD502
S1B2004
SRB2004
S1D2004
SRD2004
S1B4008
SRB4008
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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Untitled
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current
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LTC4359
LT4256
LTC4260
LTC4223-1/LTC4223-2
4359f
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s2e diode
Abstract: BH204 DIODE S2E
Text: PIN DIODE MODULES PIN diode switches - High Power SP3T HIGH POWER SP3T Electrical characteristics @ 25° C Characteristics at 25°C Frequency range Test conditions N/A Type Case 1 SH92103 SH93103 BH204 BH204 Loss Isolation Input power L I Pin 400 MHz 200 MHz
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SH92103
SH93103
BH204
SH92103
SH93103
s2e diode
DIODE S2E
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FDS3732
Abstract: 3b transistor
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
4359fa
com/LTC4359
FDS3732
3b transistor
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LTC4359CMS8
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
LT4256-1/LT4256-2
LTC4260
LTC4364
4359fb
com/LTC4359
LTC4359CMS8
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IN751a
Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current
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LTC4359
4359f
IN751a
3b transistor
IN759A
LTC4363
IN751
FDS3732
solar voltage regulator 24v
48v 150A mosfet switch
BSC011N03LS
block diagram 12V solar charge controller
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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S1m diode
Abstract: diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4
Text: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
MIL-STD-750,
S1m diode
diode s1m
Taiwan SemiConductor S1M
diode S1J
s1m taiwan semiconductor
S1J Diode
S1A-35
s1m4
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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DIODE SOT-23 PACKAGE
Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
LL4448
DL4448
OT-23
Part54G
DBS155G
DIODE SOT-23 PACKAGE
dbs107
mmbd2836
Bridge rectifier DF08
s1g 28 diode
BAS21
DL4148
LL4148
LL4448
MMBD1402
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1000C
Abstract: 2600C
Text: S1A thru S1M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 1.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers
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SMB/DO-214AA
2600C
DO-214AA
20in2
013mm)
1000C
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IRF540N
Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
Text: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation
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HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
HUF75307T3ST
HUF75309D3
HUF75309D3S
HUF75309P3
IRF540N
MOSFET IRF540n
huf76639p3
HRF3205 equivalent
HUF75623P3
ITF87056DQT
huf75339
RF1K49093
HRF3205
HRFZ44N
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Untitled
Abstract: No abstract text available
Text: S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak
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SMB/DO-214AA,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode
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ITF86116SQT
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Untitled
Abstract: No abstract text available
Text: S1A THRU S1M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES l l l l l l l SMB/DO-214AA For surface mounted applications High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers
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SMB/DO-214AA
DO-214AA
MIL-STD-750,
EIA-481)
013mm)
50mVp-p
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S1m diode
Abstract: JEDEC DO-214AA 100 Amp current 1000 volt diode diode S1G diode s1g sma DO-214AA diode JEDEC DO-214AA diode
Text: S1A THRU S1M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES SMA/DO-214AA l For surface mounted applications l High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers l Glass passivated junction
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SMA/DO-214AA
260for
DO-214AA
MIL-STD-750,
EIA-481)
013mm
S1m diode
JEDEC DO-214AA
100 Amp current 1000 volt diode
diode S1G
diode s1g sma
DO-214AA diode
JEDEC DO-214AA diode
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
MO-153AA
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S1m diode
Abstract: No abstract text available
Text: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
S1m diode
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 86116
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.2 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
8611ements
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
86116
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GE-SPCO Statte rower component Malvern
Abstract: ge 142 6rt2 A880 6rt217
Text: S3E D GE-SPCO • 3Ö7MSÖM GGOGIMS ^ 7 ^ « Û E S P A880 Statte row er Component tm eràtion M aívenuPA USA 'V- of-Z.3 77mm RECTIFIER DIODE 4500 V L2900A- The A880 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by
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367M5AM
V12900
81B\A880PWR
GE-SPCO Statte rower component Malvern
ge 142
6rt2
A880
6rt217
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DIODE S4 29
Abstract: No abstract text available
Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be
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