RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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2510W
Abstract: RS1M diode
Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10
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DO-214AC
ABS10
LL4148
MB10S
SM4007
MB10M
DB101-DB107;
DB151-DB157
DB101S-DB107S;
2510W
RS1M diode
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH126 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH126
IDTQS3VH126
500MHz
controTQS3VH126
3VH126
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH IDTQS3VH126 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH126
500MHz
10MHz;
3VH126
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH126 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH126
500MHz
3VH126
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH125 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH125
IDTQS3VH125
500MHz
contQS3VH125
3VH125
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH IDTQS3VH125 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH125
500MHz
10MHz;
3VH125
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S1m diode
Abstract: diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4
Text: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
MIL-STD-750,
S1m diode
diode s1m
Taiwan SemiConductor S1M
diode S1J
s1m taiwan semiconductor
S1J Diode
S1A-35
s1m4
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IDTQS3VH125
Abstract: QS3VH125
Text: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH125 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH125
500MHz
3VH125
Logic-0206-11
IDTQS3VH125
QS3VH125
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IDTQS3VH125
Abstract: QS3VH125 3VH125
Text: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH IDTQS3VH125 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH125
500MHz
10MHz;
3VH125
IDTQS3VH125
QS3VH125
3VH125
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH125 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH125
500MHz
3VH125
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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DIODE SOT-23 PACKAGE
Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
LL4448
DL4448
OT-23
Part54G
DBS155G
DIODE SOT-23 PACKAGE
dbs107
mmbd2836
Bridge rectifier DF08
s1g 28 diode
BAS21
DL4148
LL4148
LL4448
MMBD1402
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1000C
Abstract: 2600C
Text: S1A thru S1M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 1.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers
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SMB/DO-214AA
2600C
DO-214AA
20in2
013mm)
1000C
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74F251
Abstract: IDTQS3251 QS3251
Text: IDTQS3251 HIGH-SPEED CMOS QUICKSWITCH 8:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 8:1 MUX/DEMUX FEATURES: • • • • • • • IDTQS3251 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc
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IDTQS3251
74F251,
74FCT251,
74FCT251T
QS3251
74FCT251
74F251
IDTQS3251
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Untitled
Abstract: No abstract text available
Text: S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak
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SMB/DO-214AA,
MIL-STD-750,
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thyristor BT 161
Abstract: No abstract text available
Text: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability
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E78996
thyristor BT 161
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Untitled
Abstract: No abstract text available
Text: • . I Bulletin 127093 rev. A 09/97 In te rn a tio n a l I R Rectifier i r k FAST THYRISTOR/ DIODE and . f i 5 2 . s e r i e s INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 150 A ■ Fast tu rn -o ff th yristo r ■ Fast recovery diode ■ High surge capability
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E78996
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ir e.78996
Abstract: E.78996 scr
Text: Bulletin 127100 rev. A 10/97 International IÖ R Rectifier IRK.F180. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/DIODEand THYRISTOR/THYRISTOR Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated basep late
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20ohm
ir e.78996
E.78996 scr
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SMD MARKING CODE JYP
Abstract: JYP SOT23 Marking Code SMD za BAV199 MARKING A53 diode smd A53 SMD
Text: Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 • Switching time: typ. 0.8 jxs 2 cathode • Continuous reverse voltage: 3 anode; cathode
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BAV199
010113D
SMD MARKING CODE JYP
JYP SOT23
Marking Code SMD za
BAV199
MARKING A53 diode smd
A53 SMD
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Untitled
Abstract: No abstract text available
Text: Bulletin 127400 rev. A 09/97 International iffiR Rectifier IRK.430. SERIES THYRISTOR / DIODE and THYRISTOR / THYRISTOR SUPER MAGN-A-pak Power Modules Features • High current capability ■ 3000 V RMS Isolating voltage with non-toxic substrate ■ High surge capability
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4flSS453
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Untitled
Abstract: No abstract text available
Text: Bulletin 127099 rev. A 10/97 International IÖ R Rectifier IRK.F200. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/DIODEand THYRISTOR/THYRISTOR Features Fast tu rn -o ff th yristo r Fast recovery diode High surge capability E lectrically isolated baseplate
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PDF
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E78996
20ohms,
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