Untitled
Abstract: No abstract text available
Text: S2A.S2M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Standard silicon rectifier diodes S2A.S2M 4
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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2510W
Abstract: RS1M diode
Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10
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DO-214AC
ABS10
LL4148
MB10S
SM4007
MB10M
DB101-DB107;
DB151-DB157
DB101S-DB107S;
2510W
RS1M diode
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S2M diode
Abstract: diode s2m S2A diode
Text: S2A – S2M WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
MIL-STD-750,
S2M diode
diode s2m
S2A diode
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S2GAT
Abstract: No abstract text available
Text: S2AA – S2MA WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss
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SMA/DO-214AC
SMA/DO-214AC,
MIL-STD-750,
S2GAT
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Untitled
Abstract: No abstract text available
Text: S2A THRU S2M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES SMB/DO-214AA l For surface mounted applications l High temperature metallurgically bonded-no compression contacts as found in other l diode-constructed rectifiers
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SMB/DO-214AA
DO-214AA
MIL-STD-750,
EIA-481)
013mm)
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD S2M Preliminary DIODE SURFACE MOUNT GENERAL RECTIFIER DESCRIPTION + The UTC S2M is a surface mount general rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.
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DO-214AA)
QW-R601-222
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1100C
Abstract: 2600C
Text: S2A thru S2M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 2.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers
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SMB/DO-214AA
2600C
DO-214AA
20in2
013mm)
1100C
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Untitled
Abstract: No abstract text available
Text: S2A – S2M 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak
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SMB/DO-214AA,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: S2AA – S2MA 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak
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SMA/DO-214AC,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: S2AA – S2MA WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss
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SMA/DO-214AC
SMA/DO-214AC,
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Untitled
Abstract: No abstract text available
Text: S2A – S2M WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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DIODE SOT-23 PACKAGE
Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
LL4448
DL4448
OT-23
Part54G
DBS155G
DIODE SOT-23 PACKAGE
dbs107
mmbd2836
Bridge rectifier DF08
s1g 28 diode
BAS21
DL4148
LL4148
LL4448
MMBD1402
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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Untitled
Abstract: No abstract text available
Text: S2A.S2M /4 Surface mount diode Standard silicon rectifier diodes S2A.S2M Forward Current: 2 A Reverse Voltage: 50 to 1000 V 4 0 ; < 5 < < - %- 5 < < - : < - /9 7 3 18 7 . + #;% # 3 *
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Untitled
Abstract: No abstract text available
Text: S2A THRU S2M TRANSYS SURFACE MOUNT RECTIFIER ELECTRONICS VOLTAGE - 50 to 1000 Volts LIMITED FEATURES CURRENT - 2.0 Amperes SMB/DO-214AA For surface mounted applications High temperature meta urgica y bonded-no compression contacts as found in other diode-constructed rectifiers
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OCR Scan
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DO-214AA
MIL-STD-750,
EIA-481)
SMB/DQ-214AA
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S2M diode
Abstract: diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616 1N5614 1N5616 1N5618
Text: SEHTECH CORP SfiE D 1N5614 1N5616 1N5618 S2M S4M S6M 1N5622 SOM • 013^13^ OODBbSO ATS * S E T STANDARD RECOVERY QUICK REFERENCE AXIALLEADED HERMETICALLY SEALED DATA STANDARD RECOVERY RECTIFIER DIODE • Vr • If • trr • Vf = 200 - 1000V = 2.0A = 2 i.S
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1N5614
1N5616
1N5618
1N5620
1N5622
DS-047
S2M diode
diode S6M
diode s2m
IN5622
1N5614 JANTX
IN5618 DIODE
in5616
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transistor 1fp
Abstract: 52ga 414n 53m diode
Text: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)
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OCR Scan
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LS1S1M/S2M/53M
NJL5151M
E8256I)
52M/53M
NJL5151M/52M/53M
transistor 1fp
52ga
414n
53m diode
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