zener diode 15 v
Abstract: ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY
Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
zener diode 15 v
ultra low igss pA
SD5400CY
sst211 sot-143
5401 transistor datasheet
SD5000 quad
sd5000i
SD5000N
SD5001N
SD5401CY
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d312
Abstract: SD5000I AN301 SD5000N SD5001N SD5400CY SD5401CY SD5000 SD5401
Text: SD5000/5400 Series Siliconix NĆChannel Lateral DMOS FETs SD5000I SD5000N SD5001N Product Summary Part Number V BR DS Min (V) SD5400CY SD5401CY VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
d312
SD5000I
AN301
SD5000N
SD5001N
SD5400CY
SD5401CY
SD5000
SD5401
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sd5000
Abstract: SD5000N SD5400CY SD5401 sst211 sot-143 SD5000I SD5001N SD5401CY SD5000 SILICONIX
Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
sd5000
SD5000N
SD5400CY
SD5401
sst211 sot-143
SD5000I
SD5001N
SD5401CY
SD5000 SILICONIX
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SD5000N
Abstract: SD5000 SD5000I SD5001N SD5400CY SD5401CY #70607 SD5400
Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
SD5000N
SD5000
SD5000I
SD5001N
SD5400CY
SD5401CY
#70607
SD5400
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diode sb 5400
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S33KL2C_B5 VorläufigeDaten PreliminaryData Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage
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DD1200S33KL2C
diode sb 5400
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diode sb 5400
Abstract: sb 5400
Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1200S33KL2C_B5 暫定データ PreliminaryData Diodeインバータ/Diode,Inverter 最大定格/MaximumRatedValues ピーク繰返し逆電圧
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DD1200S33KL2C
diode sb 5400
sb 5400
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IEC61140
Abstract: 10 kw igbt inverter sb 5400 DD1200S33KL2C_B5 IRF 810
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33KL2C_B5 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C
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DD1200S33KL2C
IEC61140
10 kw igbt inverter
sb 5400
DD1200S33KL2C_B5
IRF 810
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aeg vde 0435
Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Text: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules
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CMS-UI60-UI
D-33161HÃ
aeg vde 0435
oki relay
aeg thyristors
aeg diode Si 61 L
240V AC/48v output rectifiers circuit diagrams
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ABSTRACT FOR REMOTE OPERATED MASTER SWITCH
Abstract: SLUA128A EBV Elektronik intel gerber HPA027A
Text: UCC29002 UCC39002 SLUS495C − SEPTEMBER 2001 − REVISED JULY 2003 ADVANCED 8ĆPIN LOADĆSHARE CONTROLLER FEATURES D High Accuracy, Better Than 1% CurrentShare D D D D D D D D D DESCRIPTION The UCC39002 is an advanced, high performance and low cost loadshare controller that provides all
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UCC29002
UCC39002
SLUS495C
UCC39002
PT4484
PR042
sluu137a
ABSTRACT FOR REMOTE OPERATED MASTER SWITCH
SLUA128A
EBV Elektronik intel
gerber
HPA027A
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SST211
Abstract: SST215 SD215DE SD211 SD211DE SD213DE SD214 SST213 D5 marking array-SD5000
Text: SD211DE/SST211 Series N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
SST211
SST215
SD215DE
SD211
SD211DE
SD213DE
SD214
SST213
D5 marking
array-SD5000
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sd5400cy
Abstract: 5401CY 5400CY G31E sd211de
Text: B E S ffA SD5400 SERIES N-Channel Lateral DMOS Quad FETs The Siliconix SD5400 series is a monolithic array of single-pole, single-throw analog switches designed for high-speed switching In audio, video and high frequency applications in communications, instrumentation, and process control. Designed with
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SD5400
SD5400CY
SD5401CY
SD5401
5401CY
5400CY
G31E
sd211de
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SD 214DE siliconix
Abstract: diode sb 5400
Text: Tem ic SD210DE/214DE S e m i c o n d u c t o r s N-Channel Lateral DMOS FETs Product Summary P art Number V BR DsMin(V) VGSfth) Max (V) r DS(on) Max (Q) Cr« Max (pF) toN Max (ns) SD 210DE 30 1.5 45 @ V GS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS - 10 V 0.5 2
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SD210DE/214DE
210DE
SD214DE
S-51850--Rev.
14-Apr-97
S-51850--
SD 214DE siliconix
diode sb 5400
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lm13700n
Abstract: No abstract text available
Text: LM13700 www.ti.com SNOSBW2D – MAY 2004 – REVISED SEPTEMBER 2004 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES APPLICATIONS • • • • • • • • • • • • •
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LM13700
LM13700
lm13700n
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D214D
Abstract: No abstract text available
Text: Tem ic srnççmx_ SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary P a r t N u m b er V br Ds M i» (V) VGS(th) M a* (V) ri)S(on) M ax (Q ) p r ss M ax (p F ) toN M ax (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE
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SD210DE/214DE
SD210DE
SD214DE
SD214DE,
AN301,
Sample-and-H5/94)
SD210DE/214DE
P-37406--
D214D
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SD210DE
Abstract: SD210 SST211 SD214DE #70607
Text: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D
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SD210DE/214DE
SD210DE
SD214DE
S-51850--Rev.
14-Apr-97
SD210DE
SD210
SST211
SD214DE
#70607
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SD214DE
Abstract: SD5000 quad ultra low igss pA SD210DE
Text: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D
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SD210DE/214DE
SD210DE
SD214DE
S-51850--Rev.
14-Apr-97
SD214DE
SD5000 quad
ultra low igss pA
SD210DE
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PDF
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SILICONIX SD21
Abstract: ST211 sst211 sot-143 SST211 SD 214DE siliconix SST213 213D to253 SST215 SILICONIX CD+Laser+pickup+kss+213D
Text: T e m ic SD211DE/SST211 Series Siliconix N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary P a rt N u m b er V br DS M in (V) VGS(th) M ax (V) «•DS(on) M ax (Q ) e « « M a x (p F ) toN M a x (n s) SD211DE 30 1.5
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
SILICONIX SD21
ST211
sst211 sot-143
SD 214DE siliconix
213D
to253
SST215 SILICONIX
CD+Laser+pickup+kss+213D
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LM13700 application note
Abstract: lm13700 four-quadrant multiplier
Text: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current
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LM13700
LM13700
LM13700 application note
four-quadrant multiplier
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Untitled
Abstract: No abstract text available
Text: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current
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LM13700
LM13700
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Untitled
Abstract: No abstract text available
Text: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current
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LM13700
LM13700
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LM13700 application note
Abstract: LM13700 lm13700n
Text: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current
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LM13700
LM13700
LM13700 application note
lm13700n
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AN301
Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
Text: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
AN301
SD211
SD211DE
SD213DE
SD214
SD215DE
SST211
SST213
SST215
SST215 SILICONIX
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CSD17556
Abstract: No abstract text available
Text: CSD17556Q5B www.ti.com SLPS392 – MARCH 2013 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17556Q5B PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd
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CSD17556Q5B
SLPS392
CSD17556Q5B
13-Inch
CSD17556
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CSD17556
Abstract: No abstract text available
Text: CSD17556Q5B www.ti.com SLPS392 – MARCH 2013 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17556Q5B PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd
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CSD17556Q5B
SLPS392
CSD17556Q5B
13-Inch
CSD17556
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