e/Diode sb160
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB160 Preliminary DIODE 1.0A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SB160 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB160 is suitable for polarity protection ,low voltage
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SB160
SB160
DO-41
DO-214AC)
SB160G-CA2-R
SB160L-SMA-R
SB160G-SMA-R
SB160L-Z41-R
SB160G-Z41-R
e/Diode sb160
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diode SB160
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB160 Preliminary DIODE 1.0A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SB160 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB160 is suitable for polarity protection ,low voltage and
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SB160
SB160
DO-41
DO-41
SB160L-Z41-R
SB160G-Z41-R
QW-R601-066
diode SB160
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SB160-05H
Abstract: diode SB160
Text: Ordering number :EN1982A SB160-05H Schottky Barrier Diode Twin Type • Cathode Common 50V, 16A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1160 [SB160-05H] Features · Low forward voltage (VF max=0.55V).
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EN1982A
SB160-05H
SB160-05H]
SB160-05H
diode SB160
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SB160-05R
Abstract: SB160 EN2504
Text: Ordering number :EN2504 SB160-05R Schottky Barrier Diode Twin Type • Cathode Common 50V, 16A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1180 [SB160-05R] Features · Low forward voltage (VF max=0.55V).
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EN2504
SB160-05R
SB160-05R]
SB160-05R
SB160
EN2504
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Diode sb160
Abstract: sb160 diode SB160-09R EN2500
Text: Ordering number :EN2500 SB160-09R Schottky Barrier Diode Twin Type • Cathode Common 90V, 16A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1180 [SB160-09R] Features · Low forward voltage (VF max=0.85V).
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EN2500
SB160-09R
SB160-09R]
Diode sb160
sb160 diode
SB160-09R
EN2500
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN2504 SB160-05R Schottky Barrier Diode Twin Type • Cathode Common 50V, 16A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1180 [SB160-05R] Features · Low forward voltage (VF max=0.55V).
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EN2504
SB160-05R
SB160-05R]
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EN2581A
Abstract: 25811 diode SB160 SB160-18
Text: Ordering number :EN2581A SB160-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 16A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1160 [SB160-18] Features · Low forward voltage (VF max=0.85V).
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EN2581A
SB160-18
SB160-18]
EN2581A
25811
diode SB160
SB160-18
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB160 Preliminary DIODE 1.0A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SB160 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB160 is suitable for polarity protection ,low voltage and
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SB160
SB160
DO-41
SB160L-Z41-R
SB160G-Z41-R
QW-R601-066
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Silicon Schottky Diode sod123
Abstract: No abstract text available
Text: SB160M-40 Silicon Epitaxial Planer Schottky Barrier Diode PINNING Features ˙ High reliablility ˙ Low forward voltage PIN Application ˙ For switching power supplies ˙ Battery protection against reversal current 1 DESCRIPTION 1 Cathode 2 Anode 2 PF Top View
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SB160M-40
OD-123
OD-123
Silicon Schottky Diode sod123
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Silicon Schottky Diode sod123
Abstract: diode sod-123 marking code 26
Text: SB160M-40 Silicon Epitaxial Planer Schottky Barrier Diode PINNING Features ˙ High reliablility ˙ Low forward voltage PIN Application ˙ For switching power supplies ˙ Battery protection against reversal current 1 DESCRIPTION 1 Cathode 2 Anode 2 PF Top View
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SB160M-40
OD-123
OD-123
Silicon Schottky Diode sod123
diode sod-123 marking code 26
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Untitled
Abstract: No abstract text available
Text: SB160M-40 Silicon Epitaxial Planer Schottky Barrier Diode PINNING Features ․ High reliablility ․ Low forward voltage PIN Application ․ For switching power supplies ․ Battery protection against reversal current 1 DESCRIPTION 1 Cathode 2 Anode 2 PF Top View
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SB160M-40
OD-123
OD-123
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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Untitled
Abstract: No abstract text available
Text: SB120 – SB1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability
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SB120
SB1100
DO-41
DO-41,
MIL-STD-202,
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SB120-G
Abstract: SB145-G SB150-G SB160-G SB180-G SB1100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. -High surge current capability
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SB120-G
SB1100-G
DO-41
UL94-V0
MIL-STD-750
cathode20
SB140
SB145
SB150
SB145-G
SB150-G
SB160-G
SB180-G
SB1100-G
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2581a
Abstract: EN2581A SB160 schottky
Text: Ordering number : EN2581A S B 1 6 0 -1 8 N0.2581A Schottky B arrier Diode Twin Type *Cathode Common 180V, 16A Rectifier A pplications •High frequency rectification (switching regulators, converters, choppers) F e a tu re s ■Low forward voltage (Vf max = 0.85V)
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EN2581A
2581a
EN2581A
SB160 schottky
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SB160 schottky
Abstract: No abstract text available
Text: Ordering number : EN2500 S B 1 6 0 - 0 9 R No.2500 Schottky Barrier Diode Twin Type Cathode Common 90V, 16A Re c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers) Features . Low forward voltage (VFmax=0.85V)
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EN2500
SB160 schottky
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Untitled
Abstract: No abstract text available
Text: SB120 – SB1100 1.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency
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SB120
SB1100
DO-41,
MIL-STD-202,
DO-41
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EN2688
Abstract: 1801RE
Text: Ordering number : EN2688 SB 1 6 0 - 0 9 Schottky Barrier Diode ïw in Type • Cathode Common 90V, 16A Rectifier A p p licatio n s • High frequency rectification (switching regulators, converters, choppers) F e a tu re s • Low forward voltage (Vp max = 0.85V)
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EN2688
EN2688
1801RE
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68B09
SN74ALS04BN
SN74ALS08N
SN74ALS00AN
CA3046
uA733
LM311P
LM318
CA3094
78H05
cp4071
data sheet IC 7408
2N4891
IC 7408
MDA970A2
MDA2500
1854-0071
MDA2502
2N4342
IC TTL 7400
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2504 SB 1 6 0 - 0 5 R No.2504 Schottky B arrier Diode Twin Type • Cathode Common 50V , 16A R ectifier A p p lic a tio n s • H igh frequency rectification (switching regulators, converters, choppers) F e a tu r e s • Low forw ard voltage ( Vp max = 0.55 V)
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EN2504
No2504-3/3
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Untitled
Abstract: No abstract text available
Text: SB120~SB160 1.0A Schottky Barrier Rectifiers Features 1. High surge capability 2. Low power loss, high efficiency 3. Surge overload rating to 40A peak 4. High current capability and low forward voltage drop 5. For use in low voltage, high frequency inverters, free
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SB120
SB160
SB140
SB150
SB130
SB120
1-Jun-2004
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Untitled
Abstract: No abstract text available
Text: SB120-SB160 Vishay Lite-On Power Semiconductor 1 .OA Schottky Barrier Rectifiers Features • S chottky barrier chip • Guard ring die construction fo r transient protection • High surge capability • Low pow er loss, high efficiency • Surge overload rating to 4 0A peak
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SB120-SB160
SB120
SB130
SB140
SB150
SB160
D-74025
24-Jun-98
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