SB340L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB340 Preliminary DIODE 3.0A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SB340 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB340 is suitable for polarity protection, low voltage and
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SB340
SB340
DO-201AD
OD-323
OD-123
SB340L-Z21D-R
SB340G-Z21D-R
SB340L-CA2-R
SB340G-CA2-R
SB340L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB340 Preliminary DIODE 3.0A SCHOTTKY BARRIER RECTIFIER + SMC JEDEC DO-214AB DESCRIPTION + The UTC SB340 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB340 is suitable for polarity protection, low voltage and
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SB340
DO-214AB)
SB340
DO-201AD
DO-214AA)
OD-123
OD-323
DO-214AC
SB340G-CA2-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB340 Preliminary DIODE 3.0A SCHOTTKY BARRIER RECTIFIER + - SMA DESCRIPTION JEDEC DO-214AC The UTC SB340 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB340 is suitable for polarity protection, low voltage and
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SB340
DO-214AC)
SB340
DO-201AD
OD-323
OD-123
SB340L-Z21D-R
SB340G-Z21D-R
SB340L-CA2-R
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Diode sb340
Abstract: sb340 diode SB340
Text: UNISONIC TECHNOLOGIES CO., LTD SB340 Preliminary DIODE SCHOTTKY RECTIFIER DESCRIPTION The UTC SB340 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB340 is suitable for polarity protection, low voltage and high frequency inverters free wheeling applications
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SB340
SB340
DO-201AD
DO-201AD
SB340L-Z21D-R
SB340G-Z21D-R
SB340L-Z21D-R
2011ues
Diode sb340
sb340 diode
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD SB340 Preliminary DIODE SCH OT T K Y RECT I FI ER ̈ DESCRI PT I ON The UTC SB340 is a Schottky Rectifier with high current capacity and low forward voltage. The UTC SB340 is suitable for polarity protection, low voltage and high frequency inverters free wheeling applications
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SB340
SB340
DO-201AD
SB340L-Z21D-R
SB340G-Z21D-R
QW-R601-043
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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SB360 diode
Abstract: SB320-SB3100 RS-296-E SB3100 SB320 SB330 SB340 SB350 SB360 SB380
Text: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB320
SB3100
DO-201AD
DO-201AD,
MIL-STD-202,
SB360 diode
SB320-SB3100
RS-296-E
SB3100
SB320
SB330
SB340
SB350
SB360
SB380
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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Untitled
Abstract: No abstract text available
Text: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability
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SB320
SB3100
DO-201AD
DO-201AD,
MIL-STD-202,
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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Untitled
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)
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SB320-G
SB3100-G
DO-201AD
UL94-V0
MIL-STD-750
SB350B-G
SB360B-G
SB380B-G
SB3100B-G
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SB320-G
Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)
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SB320-G
SB3100-G
DO-201AD
UL94-V0
MIL-STD-750
45B-G
SB350B-G
SB360B-G
SB380B-G
SB345-G
SB350-G
SB360-G
SB380-G
SB3100-G
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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Untitled
Abstract: No abstract text available
Text: SB320 – SB3100 3.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency
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SB320
SB3100
DO-201AD,
MIL-STD-202,
DO-201AD
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Untitled
Abstract: No abstract text available
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB320E-G
SB3100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
B360E
SB380E
SB3100E
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SB320E-G
Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB320E-G
SB3100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
B360E
SB380E
SB3100E
SB345E-G
SB350E-G
SB360E-G
SB380E-G
SB3100E-G
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Untitled
Abstract: No abstract text available
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB320E-G
SB3100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
SB380E
SB3100E
SB320E
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transistor 2N5952
Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also
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Untitled
Abstract: No abstract text available
Text: 产品规格书 Specification GD SB320S～GD SB360S GOODARK型号 构造 Construction: 用途 接受印栏 ： 金属结合型二极管 请记入贵公司的名称接受日期、责任者人名。 Schottky Barrier Diode : 高速整流用 Application : For High speed Rectifier
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SB320Sï
SB360S
1800pcs/box
000pcs/box
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SB330
Abstract: No abstract text available
Text: SB320, SB330, SB340, SB350, SB360 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability
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SB320,
SB330,
SB340,
SB350,
SB360
22-B106
DO-201AD
2002/95/EC.
2002/95/EC
2011/65/EU.
SB330
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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