SK-0028A
Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0028A
Type1N5819
size28mils
28mils0
thickness12
038mm
area20
padAnode24mils
24mils0
SK-0028A
Schottky diode Die IR
SK-002
1n5819 die
schottky diode
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1N5819 SOD-123
Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L
1N5819-CA2-R
1N5819L-CA2-R
QW-R601-008
1N5819 SOD-123
Reverse polarity pulse plating
1N5819* diode
1N5819 SOD123
1N5819
1N5819-CA2-R
1N5819L
1N5819L-CA2-R
A1N5819
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819G-CA2-R
QW-R601-008
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1N5819* diode
Abstract: 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L-CA2-R
1N5819G-CA2-R
QW-R601-008
1N5819* diode
1N5819 SOD-123
1N5819 diode
1N5819 SOD123
DIODE 1N5819 dc
transistor r601
DIODE 3a sod-123
DIODE 1n5819
1N5819
1N5819L-CA2-R
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1n5819 melf
Abstract: 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode
Text: tSENSITRON 1N5819-1 1N5819UR-1 SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise
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1N5819-1
1N5819UR-1
1n5819 melf
1N5819-1 JANTX
1N5819UR-1
MELF DL41 1N5819
1N5819-1
1.1N5819
DO-213AB
Schottky Barrier Diode
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1N5819 sensitron
Abstract: 1N5819UR-1 1N5819-1 DO-213AB
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819 sensitron
1N5819UR-1
1N5819-1
DO-213AB
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1N5819UR-1
Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819UR-1
1n5819 melf
1N5819-1
DO-213AB
1N5819UR1
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1N5819-1 JAN
Abstract: 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR-1 1N5819UR1 JANTXV
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819-1 JAN
1N5819UR1 JANTX
1N5819-1 JANTX
1N5819UR1 JANTXV
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diode 1N5819
Abstract: No abstract text available
Text: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage: 30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low
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1N5819
1N5819
diode 1N5819
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1.1N5819
Abstract: 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE
Text: SS5819-1 SS5819UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. - HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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SS5819-1
SS5819UR-1
1.1N5819
1n5819 melf
1N5819UR-1
d 2038
datasheets diode 1n5819
1N5819-1
SS5819UR-1
DO-213AB
SS5819-1
PIV RATING 14 V DIODE
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5819-1
Abstract: SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1
Text: SS5819-1 SS5819UR-1 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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SS5819-1
SS5819UR-1
5819-1
SS5819UR-1
1N5819UR-1
1N5819-1
DO-213AB
SS5819-1
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Schottky diode Die
Abstract: "Schottky Diode" diode diode 10A 1n5819 die DIODE 1N5819 datasheets diode 1n5818 datasheets diode 1n5819 1N5817 diode 1n5819 data sheet
Text: PROCESS CPD76V Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 26 x 26 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY
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CPD76V
CMLSH1-40
1N5817
1N5818
1N5819
Schottky diode Die
"Schottky Diode"
diode
diode 10A
1n5819 die
DIODE 1N5819
datasheets diode 1n5818
datasheets diode 1n5819
1N5817 diode
1n5819 data sheet
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1N5819
Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819
1N5817-1N5819
datasheets diode 1n5818
DIODE 1n5819
1N5817
1N5817-T3
1N5817-TB
1N5818
1N5818-T3
1N5818-TB
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1N5819/50SQ100
Abstract: No abstract text available
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819/50SQ100
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817-1N5819 SCHOTTKY BARRIER DIODE SOT-23-3L FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1. ANODE 3.CATHODE
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OT-23-3L
1N5817-1N5819
OT-23-3L
1N5817:
1N5818
1N5819:
1N5817
1N5818
1N5819
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Untitled
Abstract: No abstract text available
Text: 1N5817 – 1N5819 1.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency
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1N5817
1N5819
DO-41,
MIL-STD-202,
DO-41
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diode 1N5819
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE - 1. ANODE FEATURES 3.CATHODE + Power dissipation PD : 300 mW Ta=25℃ Collector current IF : 1 A Collector-base voltage VR : 1N5817:
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OT-23-3L
1N5817,
1N5819
OT-23-3L
1N5817:
1N5819:
1N5817
diode 1N5819
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1N5819
Abstract: 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23-3L Plastic-Encapsulate Diode www.haorm.cn 1N5817, 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current 1A IO : Collector-base voltage
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OT-23-3L
1N5817,
1N5819
OT-23-3L
1N5817:
1N5819:
1N5817
1N5819
1N5817
1N5817 SJ
diode 5819
5819 DIODE
1N5817 schottky diode symbol
marking SJ
1N5819 sot-23
1N5817 diode
sot-23 Marking sj
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sot-23 Marking sj
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40
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OT-23-3L
1N5817,
1N5819
OT-23-3L
1N5817:
1N5819:
1N5817
sot-23 Marking sj
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1N5819W
Abstract: SOD-123 JEDEC marking code sr marking "SR"
Text: 1N5819W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: PINNING ˙ Schottky Barrier Chip PIN ˙ Guard Ring Die Construction for Transient Protection ˙ Low Power Loss, High Efficiency ˙ High Surge Capability DESCRIPTION 1 Cathode 2 Anode 2 1 SR ˙ High Current Capability and Low Forward Voltage Drop
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1N5819W
OD-123
OD-123,
MIL-STD-202,
width200s,
OD-123
1N5819W
SOD-123 JEDEC
marking code sr
marking "SR"
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1N5819* diode
Abstract: 1N5819W
Text: 1N5819W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: PINNING ˙ Schottky Barrier Chip PIN ˙ Guard Ring Die Construction for Transient Protection ˙ Low Power Loss, High Efficiency ˙ High Surge Capability DESCRIPTION 1 Cathode 2 Anode 2 1 SR ˙ High Current Capability and Low Forward Voltage Drop
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1N5819W
OD-123
OD-123,
MIL-STD-202,
width200s,
OD-123
1N5819* diode
1N5819W
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1N5819W
Abstract: No abstract text available
Text: 1N5819W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING Features: ․ Schottky Barrier Chip PIN ․ Guard Ring Die Construction for Transient Protection ․ Low Power Loss, High Efficiency ․ High Surge Capability DESCRIPTION 1 Cathode 2 Anode 2 1 ․ High Current Capability and Low Forward Voltage Drop
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1N5819W
OD-123
OD-123,
MIL-STD-202,
width200s,
OD-123
1N5819W
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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