diode 1N5819
Abstract: No abstract text available
Text: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage: 30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low
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1N5819
1N5819
diode 1N5819
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1n5819 equivalent
Abstract: 1n5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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1n5819 equivalent
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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1N5819 SOD-123
Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L
1N5819-CA2-R
1N5819L-CA2-R
QW-R601-008
1N5819 SOD-123
Reverse polarity pulse plating
1N5819* diode
1N5819 SOD123
1N5819
1N5819-CA2-R
1N5819L
1N5819L-CA2-R
A1N5819
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datasheets diode 1n5818
Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
datasheets diode 1n5818
1N5817RL
1N5818
1N5818RL
1N5819RL
1N5817-19
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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1n5819 equivalent
Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
BRD8011/D.
DO-41
1n5819 equivalent
1N5817-19
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
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Untitled
Abstract: No abstract text available
Text: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*
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1N5819-1
1N5819UR-1
1N5819-1,
SJ5819-1/SJ5819UR-1*
SV5819-1/SV5819UR-1*
SX5819-1/SX5819UR-1*
SS5819-1/SS5819UR-1*
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819G-CA2-R
QW-R601-008
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1N5819* diode
Abstract: 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L-CA2-R
1N5819G-CA2-R
QW-R601-008
1N5819* diode
1N5819 SOD-123
1N5819 diode
1N5819 SOD123
DIODE 1N5819 dc
transistor r601
DIODE 3a sod-123
DIODE 1n5819
1N5819
1N5819L-CA2-R
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1N5817
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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"Power Diode"
Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
"Power Diode"
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
10 Ampere Schottky bridge
1N5817 diode
FULL WAVE RECTIFIER CIRCUITS
Full wave rectifier datasheet
1N5818RLG
1N5817G
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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1N5817
Abstract: 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 Equivalent for 1N5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
Equivalent for 1N5819
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1N5819 sensitron
Abstract: 1N5819UR-1 1N5819-1 DO-213AB
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819 sensitron
1N5819UR-1
1N5819-1
DO-213AB
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1N5819
Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819
1N5817-1N5819
datasheets diode 1n5818
DIODE 1n5819
1N5817
1N5817-T3
1N5817-TB
1N5818
1N5818-T3
1N5818-TB
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1n5819 melf
Abstract: 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode
Text: tSENSITRON 1N5819-1 1N5819UR-1 SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise
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1N5819-1
1N5819UR-1
1n5819 melf
1N5819-1 JANTX
1N5819UR-1
MELF DL41 1N5819
1N5819-1
1.1N5819
DO-213AB
Schottky Barrier Diode
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1N5819UR-1
Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819UR-1
1n5819 melf
1N5819-1
DO-213AB
1N5819UR1
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1N5819-1 JAN
Abstract: 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR-1 1N5819UR1 JANTXV
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819-1 JAN
1N5819UR1 JANTX
1N5819-1 JANTX
1N5819UR1 JANTXV
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1N5819/50SQ100
Abstract: No abstract text available
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819/50SQ100
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surface mount diode w1
Abstract: No abstract text available
Text: Surface Mount Schottky Barrier Rectifier Diode NSD Series FEATURES VOLTAGE: 20 TO 60 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N5817 THRU 1N5819 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS FAST RESPONSE AND LOW FORWARD VOLTAGE
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1N5817
1N5819
250OC/10
SMA/DO-214AC
EIA-RS-481)
RS-481-A
surface mount diode w1
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 1N5819 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0. B Low power loss, high efficiency. For use in low voltage high frequency inverters, free wheeling,
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1N5819
DO-41
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RS481A
Abstract: JEDEC DO-214AC DC COMPONENTS
Text: Surface Mount Schottky Barrier Rectifier Diode NSD Series FEATURES VOLTAGE: 20 TO 60 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N5817 THRU 1N5819 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS FAST RESPONSE AND LOW FORWARD VOLTAGE
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1N5817
1N5819
250OC/10
SMA/DO-214AC
EIA-RS-481)
RS-481-A
RS481A
JEDEC DO-214AC DC COMPONENTS
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