MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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ic 4060
Abstract: 512 volt 100 current scr datasheet ic 4060 how to trigger dc volt by using SCR SCR Phase Control IC SD-14 SD-15 SD-16 CM42 CM421255
Text: CM421255 CM421655 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/Diode POW-R-BLOK Modules 55 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and
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CM421255
CM421655
Amperes/1200-1600
CM421255,
ic 4060
512 volt 100 current scr
datasheet ic 4060
how to trigger dc volt by using SCR
SCR Phase Control IC
SD-14
SD-15
SD-16
CM42
CM421255
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SD140UF150A35
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SD140UF150A35 TECHNICAL DATA SHEET DATASHEET 4222, Rev- SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: •
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SD140UF150A35
SD140UF150A35
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SD140UF250B40 TECHNICAL DATA DATA SHEET 4978, Rev - SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • •
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SD140UF250B40
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GaAs 1000 nm Infrared Emitting Diode
Abstract: SD1410 SD1420 SD1440 SE1450
Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420
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SE1450
SD1420
SD1440
SD1410
INFRA-63
SE1450
SE1450-XXXL)
GaAs 1000 nm Infrared Emitting Diode
SD1420
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GaAs 1000 nm Infrared Diode,
Abstract: SD1410 SD1420 SD1440 SE1450
Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and
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SE1450
SD1420
SD1440
SD1410
INFRA-63
SE1450
SE1450-XXXL)
GaAs 1000 nm Infrared Diode,
SD1420
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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GaAs 1000 nm Infrared Diode,
Abstract: SE1450-002L
Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and
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SE1450
SD1420
SD1440
SD1410
SE1450
SE1450-XXXL)
SE1450-XXX
SD1440
GaAs 1000 nm Infrared Diode,
SE1450-002L
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diode t25 4 j5
Abstract: No abstract text available
Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420
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SE1470
SD1420
SD1440
SD1410
INFRA-63
SE1470
SE1470-XXXL)
diode t25 4 j5
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GaAs 1000 nm Infrared Diode,
Abstract: SE1450-002L se1450-003l
Text: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410
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SE1450
SD1410
SE1450
SE1450-XXXL)
SE1450-XXX
SD1440
GaAs 1000 nm Infrared Diode,
SE1450-002L
se1450-003l
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HOA2762
Abstract: HOA2762-001
Text: HOA2762 Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA2762-001, -002 or photodarlington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an
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HOA2762
HOA2762
HOA2762-001,
HOA2762-003)
SE1450,
SD1440,
SD14lsed
HOA2762-001
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H0A1876
Abstract: No abstract text available
Text: H0A1876 Transmissive Sensor DESCRIPTION The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1876-001, -002 or photodarlington (HOA1876-003) encased in a white thermoplastic housing. Detector switching takes place whenever an
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H0A1876
HOA1876
HOA1876-001,
HOA1876-003)
SE1450,
SD1440,
SD1410.
H0A1876
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0.01 K100
Abstract: HOA-1875 HOA1875 PIC metal detector sensor IF HOA1875-001
Text: HOA1875 Transmissive Sensor DESCRIPTION The HOA1875 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1875-001, -002 or photodarlington (HOA1875-003) encased in a black thermoplastic housing. Detector switching takes place whenever an
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A1875
HOA1875
HOA1875-001,
HOA1875-003)
SE1450,
SD1440,
SD1410.
G022bÃ
0.01 K100
HOA-1875
PIC metal detector
sensor IF
HOA1875-001
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H0A1874
Abstract: No abstract text available
Text: H0A1874 Transmissive Sensor DESCRIPTION The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1874-001, -002, -011, -012 or photodarlington (HOA1874-003, -013) encased in a black thermoplastic housing. Detector switching takes place
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H0A1874
HOA1874
HOA1874-001,
HOA1874-003,
HOA1874-011
SE1450,
SD1440,
SD1410,
SEP8506,
H0A1874
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HOA2498-001
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA2498-001, -002 or photodarlington (HOA2498-003), encased side-by-side on converging optical axes in a black thermoplastic housing. The
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HOA2498
HOA2498-001,
HOA2498-003)
SE1450,
SD1440,
SD1410.
455ifl3Ã
HOA2498-001
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H0A1404
Abstract: HOA1404
Text: H0A1404 Reflective Sensor DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The
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H0A1404
HOA1404
HOA1404-001
HOA1404-003)
SE1450,
SD1440,
SD1410.
SS1A30
22b4b
H0A1404
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HOA14
Abstract: No abstract text available
Text: HOA1404 Reflective Sensor DESCRIPTION The HOA14C4 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The
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HOA1404
HOA1404-001
HOA1404-003)
SE1450,
SD1440,
SD1410.
HOA14
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HOA2498
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor , FEATURES • Choiceol phoblransislor or pholodarlingtn output ' / / ' Wide opera ling temperature range - 55'C lo-MOO'C DESCRIPTION The HOA2498 secies oons&ls ol an inFrared emitting diode -and an NPN silicon phototransislor (H0A24B&- 001, - 002) or photodarington
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HOA2498
44-I--I-WÃ
00SSSBSÃ
HOA2498
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Zener Diode, NC4V7
Abstract: NC6V8 diode g25 NC10 NC11 NC12 NC13 NC15 NC16 NC18
Text: ELECTRICAL CHARACTERISTICS b DIODE ELECTRICAL CHARACTERISTICS ZENER DIODES Reference Voltage (Vz) Norn. Min. Max. @ lz Differential Resistance Rz @ lz Temperature Coefficient Sz @ h Dice Type Reverse Current lR @ VR Geometry mA V V V mA Q mA % °c mA ND2V7
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BS3494.
Zener Diode, NC4V7
NC6V8
diode g25
NC10
NC11
NC12
NC13
NC15
NC16
NC18
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SE1470
Abstract: SE1470-002L
Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125C)
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SE1470
SD1420
SD1440
SD1410
SE1470
SE1470-XXXL)
SD1440
SE1470-002L
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Untitled
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to+100°C DESCRIPTION The HOA2490 series consists of an infrared emitting diode and an NPN silicon phototransistor
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HOA2498
HOA2490
HOA2498-001,
HOA2498-003)
HOA2498
SE1450,
SD1440,
SD1410.
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all Metal Detector
Abstract: HQA2862-003 ic for metal detector hoa2862
Text: HOA2862 Transmissive Sensor D ESCRIPTIO N The HOA2862 series consists of an infrared emitting diode facing an N PN silicon phototransistor HOA2862-001, -002 or photodarlington (HOA2862-003) encased in a black thermoplastic housing. Detector switching takes place whenever an
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HOA2862
HOA2862
HOA2862-001,
HOA2862-003)
SE1450,
SD1440,
SD1410.
all Metal Detector
HQA2862-003
ic for metal detector
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sd144
Abstract: reflective sensor
Text: HOA1404 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor
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HOA1404
HOA1404
HOA1404-001,
HOA1404-003)
SE1450,
SD1440,
SD1410.
sd144
reflective sensor
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Untitled
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range {-55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor
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HOA2498
HOA2498
HOA2498-OQ1,
HOA2498-003)
SE1450,
SD1440,
SD1410.
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