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    DIODE SE14 Search Results

    DIODE SE14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SE14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaAs 1000 nm Infrared Emitting Diode

    Abstract: SD1410 SD1420 SD1440 SE1450
    Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420


    Original     		PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Emitting Diode SD1420

    SE1470

    Abstract: SD1410 SD1420 SD1440 SE1470-XXX
    Text: SE1470 AlGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (- 55¡C to +125¡C)


    Original     		PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420 SE1470-XXX

    GaAs 1000 nm Infrared Diode,

    Abstract: SD1410 SD1420 SD1440 SE1450
    Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and


    Original     		PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Diode, SD1420

    SE1470

    Abstract: SD1410 SD1420 SD1440
    Text: 17 September 1997 SE1470 AlGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55¡C to +125¡C)


    Original     		PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420

    SE1470

    Abstract: SE1470-002L
    Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125C)


    OCR Scan     		PDF SE1470 SD1420 SD1440 SD1410 SE1470 SE1470-XXXL) SD1440 SE1470-002L

    Untitled

    Abstract: No abstract text available
    Text: SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTIC 25°C unless otherwise noted PARAMETER Total Power Output SE1450-001, SE1450-001 L SE1450-002, SE1450-002 L SE1450-003, SE1450-003 L SE1450-004, SE1450-004 L Forward Voltage . Reverse Breakdown Voltage


    OCR Scan     		PDF SE1450 SE1450-001, SE1450-001 SE1450-002, SE1450-002 SE1450-003, SE1450-003 SE1450-004, SE1450-004 QQ25MS1

    SE1470-002L

    Abstract: SE1470-003
    Text: SE1470 AIGaAs Infrared Emitting Diode I FEATURES • Compact metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents . Wide operating temperature range (-55°C to +125°C)


    OCR Scan     		PDF SE1470 SD1420 SD1440 SD1410 SE1470 SE1470-XXXL) SD1440 SE1470-002L SE1470-003

    GaAs 1000 nm Infrared Diode,

    Abstract: SE1450-002L
    Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and


    OCR Scan     		PDF SE1450 SD1420 SD1440 SD1410 SE1450 SE1450-XXXL) SE1450-XXX SD1440 GaAs 1000 nm Infrared Diode, SE1450-002L

    diode t25 4 j5

    Abstract: No abstract text available
    Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420


    OCR Scan     		PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) diode t25 4 j5

    GaAs 1000 nm Infrared Diode,

    Abstract: SE1450-002L se1450-003l
    Text: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410


    OCR Scan     		PDF SE1450 SD1410 SE1450 SE1450-XXXL) SE1450-XXX SD1440 GaAs 1000 nm Infrared Diode, SE1450-002L se1450-003l

    HOA2762

    Abstract: HOA2762-001
    Text: HOA2762 Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA2762-001, -002 or photodarlington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an


    OCR Scan     		PDF HOA2762 HOA2762 HOA2762-001, HOA2762-003) SE1450, SD1440, SD14lsed HOA2762-001

    H0A1876

    Abstract: No abstract text available
    Text: H0A1876 Transmissive Sensor DESCRIPTION The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1876-001, -002 or photodarlington (HOA1876-003) encased in a white thermoplastic housing. Detector switching takes place whenever an


    OCR Scan     		PDF H0A1876 HOA1876 HOA1876-001, HOA1876-003) SE1450, SD1440, SD1410. H0A1876

    0.01 K100

    Abstract: HOA-1875 HOA1875 PIC metal detector sensor IF HOA1875-001
    Text: HOA1875 Transmissive Sensor DESCRIPTION The HOA1875 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1875-001, -002 or photodarlington (HOA1875-003) encased in a black thermoplastic housing. Detector switching takes place whenever an


    OCR Scan     		PDF A1875 HOA1875 HOA1875-001, HOA1875-003) SE1450, SD1440, SD1410. G022bà 0.01 K100 HOA-1875 PIC metal detector sensor IF HOA1875-001

    H0A1874

    Abstract: No abstract text available
    Text: H0A1874 Transmissive Sensor DESCRIPTION The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1874-001, -002, -011, -012 or photodarlington (HOA1874-003, -013) encased in a black thermoplastic housing. Detector switching takes place


    OCR Scan     		PDF H0A1874 HOA1874 HOA1874-001, HOA1874-003, HOA1874-011 SE1450, SD1440, SD1410, SEP8506, H0A1874

    HOA2498-001

    Abstract: No abstract text available
    Text: HOA2498 Reflective Sensor DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA2498-001, -002 or photodarlington (HOA2498-003), encased side-by-side on converging optical axes in a black thermoplastic housing. The


    OCR Scan     		PDF HOA2498 HOA2498-001, HOA2498-003) SE1450, SD1440, SD1410. 455ifl3Ã HOA2498-001

    H0A1404

    Abstract: HOA1404
    Text: H0A1404 Reflective Sensor DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The


    OCR Scan     		PDF H0A1404 HOA1404 HOA1404-001 HOA1404-003) SE1450, SD1440, SD1410. SS1A30 22b4b H0A1404

    HOA14

    Abstract: No abstract text available
    Text: HOA1404 Reflective Sensor DESCRIPTION The HOA14C4 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The


    OCR Scan     		PDF HOA1404 HOA1404-001 HOA1404-003) SE1450, SD1440, SD1410. HOA14

    HOA2498

    Abstract: No abstract text available
    Text: HOA2498 Reflective Sensor , FEATURES • Choiceol phoblransislor or pholodarlingtn output ' / / ' Wide opera ling temperature range - 55'C lo-MOO'C DESCRIPTION The HOA2498 secies oons&ls ol an inFrared emitting diode -and an NPN silicon phototransislor (H0A24B&- 001, - 002) or photodarington


    OCR Scan     		PDF HOA2498 44-I--I-WÃ 00SSSBSÃ HOA2498

    Untitled

    Abstract: No abstract text available
    Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to+100°C DESCRIPTION The HOA2490 series consists of an infrared emitting diode and an NPN silicon phototransistor


    OCR Scan     		PDF HOA2498 HOA2490 HOA2498-001, HOA2498-003) HOA2498 SE1450, SD1440, SD1410.

    all Metal Detector

    Abstract: HQA2862-003 ic for metal detector hoa2862
    Text: HOA2862 Transmissive Sensor D ESCRIPTIO N The HOA2862 series consists of an infrared emitting diode facing an N PN silicon phototransistor HOA2862-001, -002 or photodarlington (HOA2862-003) encased in a black thermoplastic housing. Detector switching takes place whenever an


    OCR Scan     		PDF HOA2862 HOA2862 HOA2862-001, HOA2862-003) SE1450, SD1440, SD1410. all Metal Detector HQA2862-003 ic for metal detector

    sd144

    Abstract: reflective sensor
    Text: HOA1404 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor


    OCR Scan     		PDF HOA1404 HOA1404 HOA1404-001, HOA1404-003) SE1450, SD1440, SD1410. sd144 reflective sensor

    Untitled

    Abstract: No abstract text available
    Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range {-55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor


    OCR Scan     		PDF HOA2498 HOA2498 HOA2498-OQ1, HOA2498-003) SE1450, SD1440, SD1410.

    HOA2762

    Abstract: HQA2762 honeywell sensor
    Text: HOA2762 Not recommended for new designs Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HCJA2762-001, -002 or photodariington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an


    OCR Scan     		PDF HOA2762 HOA2762 HCJA2762-001, HOA2762-003) HQA2762 honeywell sensor

    OA2498

    Abstract: No abstract text available
    Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an N PN silicon phototransistor


    OCR Scan     		PDF HOA2498 HOA2498 HOA2498-001, HOA2498-003) SE1450, SD1440, SD1410. OA2498