linfinity
Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
Text: SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V minimum breakdown voltage • 500mA current capability per diode
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SG5768,
SG5770,
SG5772,
SG5774
SG6506/SG6507/SG6508/SG6509
500mA
14-PIN
SG6509J
1N6509)
linfinity
MIL-S-19500/474
1N5768
14 pin dip diode array
linfinity 8 ceramic dip
"pin to pin"
SG5768F
SG6509
55c diode
1N5772
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1N6510 JAN
Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
Text: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has
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SG6100/SG6511
SG6101/SG6510
SG6100/SG6511
SG6101/SG6510
1N6100)
14-PIN
SG6101J
1N6101)
1N6510 JAN
1N6510 LINFINITY
linfinity
1N6100
1N6101
1N6510
1N6511
SG6100
SG6101
SG6511
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1SS198
Abstract: diode led ir
Text: TH97/10561QM 1SS198 TW00/17276EM IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance.
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TH97/10561QM
1SS198
TW00/17276EM
TH07/1033
DO-34
1SS198
diode led ir
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ADB 935
Abstract: diode smd ed 49 smd diode code ED 5l marking ADB18PS diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB
Text: ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset TAB 1 DESCRIPTION The ADB18PS combines a diode bridge and a
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ADB18PS
ADB18PS
ADB 935
diode smd ed 49
smd diode code ED
5l marking
diode jc 5l
Diode smd code cm
SGS-THOMSON SMD
marking code ADB
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode SGC10DLH THRU SGC10MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 1206-S Unit : mm 1.50 Typ. Halogen-free type Compliance to RoHS product GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction
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SGC10DLH
SGC10MLH
1206-S
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marking sg
Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Text: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·
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OD-323
SD107WS
OD-323
3000ms.
019REF
475REF
marking sg
diode SOD-323
SD107WS
SG DIODE MARKING
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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SG600GXH26
SG800W24
SG1000GXH26
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2000GXH26
SG2200GXH24
SG2500EX24
snubber diode
SG2500GX
gto sg3000gxh24
SG3000GXH24
free diode
1000GXHH22
800EXH21
SG3000GXH
100GXHH21
SG4000GXH26G
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silicon general 16 pin ceramic dip J
Abstract: No abstract text available
Text: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight
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SG6100/SG6101
100mA
SG6100
SG6101
16-PIN
SG6101J
14-PIN
SG6100F
silicon general 16 pin ceramic dip J
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620 tg diode
Abstract: diode smd marking FZ Diode smd code sg SGS-THOMSON SMD diode smd ed 49 smd diode marking sG SMD MARKING CODE sg diode MARKING CODE sg Diode smd code FZ 660 tg diode
Text: fZ T ^7# SGS-THOMSON ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION The ADB18PS combines a diode bridge and a
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ADB18PS
ADB18PS
620 tg diode
diode smd marking FZ
Diode smd code sg
SGS-THOMSON SMD
diode smd ed 49
smd diode marking sG
SMD MARKING CODE sg
diode MARKING CODE sg
Diode smd code FZ
660 tg diode
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Untitled
Abstract: No abstract text available
Text: gjjj SGS-THOMSON L6210 DUAL SCHOTTKY DIODE BRIDGE . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES . HIGH EFFICIENCY . 4A PEAK CURRENT . LOW FORWARD VOLTAGE . FAST RECOVERY TIME . TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode
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L6210
L6210
DIP16
P0WERD1P16
00b7L
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sg32
Abstract: SG3212F SG3212J CERAMIC FLATPACK jantx diodes
Text: SG3212 5ILIŒ1N GENERAL DUAL DIODE BRIDGE LIN EA R IN TEG R A TED C IR C U IT S DESCRIPTION FEATURES The Silicon General dual diode bridge features high breakdown and low forward vo lta g e . • 60V minimum breakdown voltage » 1A current capability per diode
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SG32U
MIL-S-19500
SG3212
14-PIN
SG3212J/883B
SG3212J
SG3212F/883B
SG3212F
sg32
SG3212F
SG3212J
CERAMIC FLATPACK
jantx diodes
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SG6101J
Abstract: sg6101
Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has
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SG6100/SG6511
SG6101/SG6510
16-PIN
SG6101J
1N6101)
14-PIN
SG6101J
sg6101
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Untitled
Abstract: No abstract text available
Text: C T SGS-THOMSON ^ 7 # . HDlgœilLIgTOOIfSlDgi BAT 46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS limiting values Symbol Repetitive Peak Reverse Voltage
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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Untitled
Abstract: No abstract text available
Text: /=7 SGS-THOMSON * 7 # . UngœillLigTOOKIDgi BAT 2 9 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Parameter Symbol Value Repetitive Peak Reverse Voltage
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7T2T237
G0bS271
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 1N 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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Untitled
Abstract: No abstract text available
Text: ¿ = 7 SGS-THOMSON *7 # » TMMBAT 29 MD g @IlLi 'inS®ffl(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter
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Untitled
Abstract: No abstract text available
Text: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION
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ADB18PS
ADB18PS
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400v p - CHANNEL mos
Abstract: STH9N50D
Text: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE
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STH9N50D
O-218
400v p - CHANNEL mos
STH9N50D
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 57, TM BAT 49 m SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and tast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges.
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BAR19
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: £jJ SGS-THOMSON D g @ElLi^TOiDtSi TM M BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter Symbol V r rm
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7T2T237
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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