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    DIODE SG Search Results

    DIODE SG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Diodes General Philips Semiconductors Letter Symbols - Diodes General Original PDF

    DIODE SG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    linfinity

    Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
    Text: SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V minimum breakdown voltage • 500mA current capability per diode


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    PDF SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 500mA 14-PIN SG6509J 1N6509) linfinity MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772

    1N6510 JAN

    Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
    Text: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has


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    PDF SG6100/SG6511 SG6101/SG6510 SG6100/SG6511 SG6101/SG6510 1N6100) 14-PIN SG6101J 1N6101) 1N6510 JAN 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511

    1SS198

    Abstract: diode led ir
    Text: TH97/10561QM 1SS198 TW00/17276EM IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance.


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    PDF TH97/10561QM 1SS198 TW00/17276EM TH07/1033 DO-34 1SS198 diode led ir

    ADB 935

    Abstract: diode smd ed 49 smd diode code ED 5l marking ADB18PS diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB
    Text: ADB18PS  AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset TAB 1 DESCRIPTION The ADB18PS combines a diode bridge and a


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    PDF ADB18PS ADB18PS ADB 935 diode smd ed 49 smd diode code ED 5l marking diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB

    Untitled

    Abstract: No abstract text available
    Text: ZOWIE Low VF Rectifier Diode SGC10DLH THRU SGC10MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 1206-S Unit : mm 1.50 Typ. Halogen-free type Compliance to RoHS product GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction


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    PDF SGC10DLH SGC10MLH 1206-S

    marking sg

    Abstract: diode SOD-323 SD107WS SG DIODE MARKING
    Text: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·


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    PDF OD-323 SD107WS OD-323 3000ms. 019REF 475REF marking sg diode SOD-323 SD107WS SG DIODE MARKING

    snubber diode

    Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
    Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11


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    PDF SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G

    silicon general 16 pin ceramic dip J

    Abstract: No abstract text available
    Text: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight


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    PDF SG6100/SG6101 100mA SG6100 SG6101 16-PIN SG6101J 14-PIN SG6100F silicon general 16 pin ceramic dip J

    620 tg diode

    Abstract: diode smd marking FZ Diode smd code sg SGS-THOMSON SMD diode smd ed 49 smd diode marking sG SMD MARKING CODE sg diode MARKING CODE sg Diode smd code FZ 660 tg diode
    Text: fZ T ^7# SGS-THOMSON ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION The ADB18PS combines a diode bridge and a


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    PDF ADB18PS ADB18PS 620 tg diode diode smd marking FZ Diode smd code sg SGS-THOMSON SMD diode smd ed 49 smd diode marking sG SMD MARKING CODE sg diode MARKING CODE sg Diode smd code FZ 660 tg diode

    Untitled

    Abstract: No abstract text available
    Text: gjjj SGS-THOMSON L6210 DUAL SCHOTTKY DIODE BRIDGE . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES . HIGH EFFICIENCY . 4A PEAK CURRENT . LOW FORWARD VOLTAGE . FAST RECOVERY TIME . TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode


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    PDF L6210 L6210 DIP16 P0WERD1P16 00b7L

    sg32

    Abstract: SG3212F SG3212J CERAMIC FLATPACK jantx diodes
    Text: SG3212 5ILIŒ1N GENERAL DUAL DIODE BRIDGE LIN EA R IN TEG R A TED C IR C U IT S DESCRIPTION FEATURES The Silicon General dual diode bridge features high breakdown and low forward vo lta g e . • 60V minimum breakdown voltage » 1A current capability per diode


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    PDF SG32U MIL-S-19500 SG3212 14-PIN SG3212J/883B SG3212J SG3212F/883B SG3212F sg32 SG3212F SG3212J CERAMIC FLATPACK jantx diodes

    SG6101J

    Abstract: sg6101
    Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has


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    PDF SG6100/SG6511 SG6101/SG6510 16-PIN SG6101J 1N6101) 14-PIN SG6101J sg6101

    Untitled

    Abstract: No abstract text available
    Text: C T SGS-THOMSON ^ 7 # . HDlgœilLIgTOOIfSlDgi BAT 46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS limiting values Symbol Repetitive Peak Reverse Voltage


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    SMD diode sg 46

    Abstract: SMD diode sg 03
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS


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    PDF BAP50-03 SCA61 SMD diode sg 46 SMD diode sg 03

    Untitled

    Abstract: No abstract text available
    Text: /=7 SGS-THOMSON * 7 # . UngœillLigTOOKIDgi BAT 2 9 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Parameter Symbol Value Repetitive Peak Reverse Voltage


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    PDF 7T2T237 G0bS271

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 1N 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break­ down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.


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    diode a62

    Abstract: BAP51-03 diode smd ED 74 lm 9805
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance


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    PDF BAP51 BAP51-03 diode a62 BAP51-03 diode smd ED 74 lm 9805

    Untitled

    Abstract: No abstract text available
    Text: ¿ = 7 SGS-THOMSON *7 # » TMMBAT 29 MD g @IlLi 'inS®ffl(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter


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    Untitled

    Abstract: No abstract text available
    Text: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION


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    PDF ADB18PS ADB18PS

    400v p - CHANNEL mos

    Abstract: STH9N50D
    Text: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE


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    PDF STH9N50D O-218 400v p - CHANNEL mos STH9N50D

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 57, TM BAT 49 m SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and tast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges.


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    BAR19

    Abstract: No abstract text available
    Text: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage


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    Untitled

    Abstract: No abstract text available
    Text: £jJ SGS-THOMSON D g @ElLi^TOiDtSi TM M BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter Symbol V r rm


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    PDF 7T2T237

    diode sg 64

    Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
    Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.


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    PDF SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A 500mA 14-PIN diode sg 64 SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J