SMD MARKING CODE sg
Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Text: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top
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SB520WT
OD-523
OD-523
SMD MARKING CODE sg
diode MARKING CODE sg
smd diode marking sG
MARKING CODE sg 06
diode sg 01
diode smd marking code SG
SG DIODE MARKING
diode smd code SG
sg smd code
smd "code rc" transistor
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diode sg 28
Abstract: SG 21 DIODE SG DIODE diode sg 5 BL0508-09-73
Text: 22mm x 22mm LED CLUSTER Part Number: BL0508-09-73 SUPER BRIGHT RED SUPER BRIGHT GREEN Features Description HIGH VISIBILITY. The Super Bright Red source color devices are made EMITTING COLOR: SUPER BRIGHT RED AND SUPER BRIGHT with Gallium Aluminum Arsenide Red Light Emitting
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BL0508-09-73
DSAC1194
FEB/28/2007
diode sg 28
SG 21 DIODE
SG DIODE
diode sg 5
BL0508-09-73
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SG DIODE
Abstract: No abstract text available
Text: 22mm x 22mm LED CLUSTER BL0508-09-73 Features SUPER BRIGHT RED SUPER BRIGHT GREEN Description HIGH VISIBILITY. The Super Bright Red source color devices are made EMITTING COLOR: SUPER BRIGHT RED AND SUPER BRIGHT with Gallium Aluminum Arsenide Red Light Emitting
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BL0508-09-73
BL0508-09-73
DSAC1194
JAN/10/2005
SG DIODE
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SG DIODE
Abstract: diode Sr BL0508-09-73 5mm LIGHT EMITTING DIODE SG 21 DIODE
Text: 21.9mm x 21.9mm LED CLUSTER BL0508-09-73 Features Description !HIGH VISIBILITY. !EMITTING COLOR: ! NO. The Super Bright Red source color devices are made HYPER RED. OF BUILT-IN 5mm LED LAMPS: Super Brihgt Red 3 Pcs,Super Bright Green 6 Pcs. !WATERPROOF PACKAGE WITH HOOD SUITABLE
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Original
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BL0508-09-73
DSAC1194
MAR/04/2003
SG DIODE
diode Sr
BL0508-09-73
5mm LIGHT EMITTING DIODE
SG 21 DIODE
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ESM3030DV
Abstract: No abstract text available
Text: SG S-TH O M SO N RülDigœilLIg'iriûiDeS ESM3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT
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OCR Scan
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ESM3030DV
ESM3030DV
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PDF
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ESM4045DV
Abstract: No abstract text available
Text: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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OCR Scan
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ESM4045DV
ESM4045DV
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PDF
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220v 25a diode bridge
Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Text: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A
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OCR Scan
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10/700MS
TSI62B5
TSI120B5
TSI150B5
TSI180B5
TSI200B5
TSI270B5
TSI62
TSI120
TSI150
220v 25a diode bridge
220v 5a diode bridge
TSI270B5
sgs marking code
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PDF
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220v 25a diode bridge
Abstract: No abstract text available
Text: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5
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OCR Scan
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PDF
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Schaffner IU 1237
Abstract: Schaffner 1237 NSG506C 7R2R23
Text: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS
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OCR Scan
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LDP24M
-SAEJ1113A.
S0-10TM
Schaffner IU 1237
Schaffner 1237
NSG506C
7R2R23
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motorola opto
Abstract: 1N914 MMCFD914 38192
Text: 34 MOTOROLA SG iDIODES /OP TO l ¿T|h3t,7ESS GDBflna 4 T " 6367255 M O T O R O L A SC DIODES/OPTO 34C 38192 MMCFD914 FLIP-CHIP SW ITCHING DIO DE F lip -C h ip diode for high-speed switching applications with performance similar to the 1N914. Primary Electrical Features:
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OCR Scan
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MMCFD914
1N914.
motorola opto
1N914
MMCFD914
38192
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PDF
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Diode MARKING S37
Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Text: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS
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OCR Scan
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LDP24AS
Diode MARKING S37
transient voltage suppressor diode
LDP24AS
DTR7637
DIODE MARKING CODE 623
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PDF
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transistor 467 sgs
Abstract: 0809 al diode sg 5 ts sgs30da070
Text: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE
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OCR Scan
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O-240)
PC-029«
transistor 467 sgs
0809 al
diode sg 5 ts
sgs30da070
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sgs25D
Abstract: No abstract text available
Text: 3ÜE V • TTE' ÌSB? D0 3GbS b T ■ r r 7 SGS-THOMSON ^ 7 # r IL U m « ! SG S25DA080D S G S-THOMSON NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS * LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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OCR Scan
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S25DA080D
O-240)
PC-029«
sgs25D
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PDF
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Untitled
Abstract: No abstract text available
Text: £ ÿ j SG S-TH O M SO N n0œilLI0ra [iïlBCi STTA1212D TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V (typ) ns (max) V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
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OCR Scan
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STTA1212D
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PDF
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S-40T
Abstract: SGS40TA045 SGS40
Text: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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OCR Scan
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SC04520
O-240)
PC-029«
S-40T
SGS40TA045
SGS40
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PDF
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SGS100D
Abstract: No abstract text available
Text: 3GE » m QD30bfl4 4 ^ _ ^ 3 3 - 3 > f Z 7 S G S -T H O M S O N ^ 7# SG S100DA020D " S G S-THOMSON NPN DARLINGTON POWER MODULE • POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS ■ LOW Rth JUNCTION TO CASE ■ FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING
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OCR Scan
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QD30bfl4
S100DA020D
O-240)
PC-029«
SGS100D
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PDF
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SGS50DA045D
Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
Text: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING
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OCR Scan
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G03Dhba
T0-240)
O-240)
PC-029«
SGS50DA045D
SGS50DA
lta 301
L-93S
transpack transistor
SGS50DA045
SGS50D
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PDF
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0809 al
Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Text: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE
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OCR Scan
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T-91-20
O-240)
PC-029«
0809 al
HALF BRIDGE NPN DARLINGTON POWER MODULE
SGS30D
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PDF
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diode sg 52
Abstract: mosfet 1200V 25A MOROCCO B 108 B
Text: £ y j SG S-TH O M SO N TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V (typ) 60ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN
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OCR Scan
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PDF
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73b21
Abstract: No abstract text available
Text: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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OCR Scan
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T0220AC
STTB806D
STTB806DI
73b21
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PDF
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NPN DARLINGTON POWER MODULE
Abstract: SGS50DB040D 9120 mosfet SGS50D
Text: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE
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OCR Scan
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DD3D72D
O-240)
PC-029«
NPN DARLINGTON POWER MODULE
SGS50DB040D
9120 mosfet
SGS50D
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PDF
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diode sg 46
Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Text: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS
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OCR Scan
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STTA512D
ISOWATT220AC
STTA512F
diode sg 46
SG DIODE MARKING
diode sg 52
IGBT 2000V .50A
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PDF
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G10 zener diode
Abstract: "RCA Solid State thyristor SGT03U13 SGT06U13 SGT23U13 Surgector dw0t
Text: G E SOLI» STATE Gl 3875081 G E SOLID STATE ’" D e | 3fl750àl0Q17fa34 ' 0 ÏÊT 17634 T -K '1 3 ' D - S U R G E C T O R s
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OCR Scan
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E17634
SGT03U13,
SGT06U13,
SGT23U13
O-202
92CS-38779
SGT03U13
SGT06U13
3fl750fll
G10 zener diode
"RCA Solid State thyristor
SGT23U13
Surgector
dw0t
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PDF
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SG 21 DIODE SMD
Abstract: diode sg 36 SQ2014 14104BEA 14103BEA SG2023
Text: SG2000 SERIES 5 IL IC D N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEA TU RES The SG 2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in
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OCR Scan
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SG2000
600mA
500mA
20-PIN
2XXXLV883B
SG 21 DIODE SMD
diode sg 36
SQ2014
14104BEA
14103BEA
SG2023
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PDF
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